페이지 153 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
PMEG6010CEJ/ZLX	Nexperia USA Inc.	DIODE SCHOTTKY SOD2 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고7,248	-	-	-	-	-	-	-	-	-	-	-
VS-8EWF06STRLPBF	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,832	600V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
RGP30BLHE3/72	Vishay Semiconductor Diodes Division	DIODE 3A 100V 150NS DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-201AD, Axial	재고2,688	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
STTH3R04	STMicroelectronics	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max)	패키지: DO-201AD, Axial	재고6,144	400V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
1N4003GP	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,048	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 175°C
VS-87HF100	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고4,832	400V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
VS-MBRD330TR-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 30V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 189pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,400	30V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	189pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
RU 1A	Sanken	DIODE GEN PURP 600V 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고3,184	600V	250mA	2.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
EGP10CE-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고5,120	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	22pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
1N6484HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고5,392	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SK33A M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고4,688	30V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UH1C-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고151,200	150V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RS2D M4G	TSC America Inc.	DIODE, FAST, 2A, 200V, 150NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고5,984	200V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CD214A-FS1200	Bourns Inc.	DIODE CHIP 200V 1A DO214AC Diode Type: - Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,688	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1GHR3G	TSC America Inc.	DIODE, 1A, 400V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고4,624	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
APT60D60BG	Microsemi Corporation	DIODE GEN PURP 600V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고51,864	600V	60A	1.8V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
PMEG2015EA,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1.5A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A (DC) Voltage - Forward (Vf) (Max) @ If: 660mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 15V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 125°C	패키지: SC-76, SOD-323	재고5,312	20V	1.5A (DC)	660mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 15V	25pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 125°C
DST10100S	Littelfuse Inc.	DIODE SCHOTTKY 10A 100V TO-277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-PowerSMD, Flat Leads Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	패키지: 3-PowerSMD, Flat Leads	재고2,112	100V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Surface Mount	3-PowerSMD, Flat Leads	TO-277B	-55°C ~ 150°C
FFPF30UP20STU	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 30A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack	재고13,944	200V	30A	1.15V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
JANTXV1N3600	Microchip Technology	DIODE 50V 200MA DO7 Diode Type: - Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
1N5393-TP	Micro Commercial Co	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SCS212AGC17	Rohm Semiconductor	DIODE SIC 650V 12A TO220ACFP Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 240 µA @ 600 V Capacitance @ Vr, F: 438pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C	패키지: -	재고549	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C
SMBT1570LT3	onsemi	SS SOT223 DL XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S8CK-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 800V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 79pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고21,000	800 V	8A	985 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 800 V	79pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
R5040PF	Microchip Technology	DIODE GEN PURP 400V 50A DO21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Press Fit Package / Case: DO-208AA Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	400 V	50A	1.05 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Press Fit	DO-208AA	DO-21	-65°C ~ 175°C
1N5819H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
USD545E3	Microchip Technology	DIODE SCHOTTKY 45V 75A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	45 V	75A	680 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 45 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 175°C
US1MWF-HF	Comchip Technology	DIODE GEN PURP 1KV 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	1A	1.65 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C

PMEG6010CEJ/ZLX

Nexperia USA Inc.

DIODE SCHOTTKY SOD2

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고7,248

-

VS-8EWF06STRLPBF

Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,832

600V

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

100µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

RGP30BLHE3/72

Vishay Semiconductor Diodes Division

DIODE 3A 100V 150NS DO-201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-201AD, Axial

재고2,688

100V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

STTH3R04

STMicroelectronics

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)

패키지: DO-201AD, Axial

재고6,144

400V

3A

1.5V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

-

Through Hole

DO-201AD, Axial

DO-201AD

175°C (Max)

1N4003GP

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,048

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 175°C

VS-87HF100

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고4,832

400V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

VS-MBRD330TR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 30V DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,400

30V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

189pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

RU 1A

Sanken

DIODE GEN PURP 600V 250MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고3,184

600V

250mA

2.5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

EGP10CE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고5,120

150V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

22pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

1N6484HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고5,392

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SK33A M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고4,688

30V

3A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

UH1C-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고151,200

150V

1A

1.05V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 150V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

RS2D M4G

TSC America Inc.

DIODE, FAST, 2A, 200V, 150NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고5,984

200V

2A

1.3V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CD214A-FS1200

Bourns Inc.

DIODE CHIP 200V 1A DO214AC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,688

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

S1GHR3G

TSC America Inc.

DIODE, 1A, 400V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고4,624

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1µA @ 400V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

APT60D60BG

Microsemi Corporation

DIODE GEN PURP 600V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고51,864

600V

60A

1.8V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

130ns

250µA @ 600V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

PMEG2015EA,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1.5A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 660mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 15V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C

패키지: SC-76, SOD-323

재고5,312

20V

1.5A (DC)

660mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 15V

25pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 125°C

DST10100S

Littelfuse Inc.

DIODE SCHOTTKY 10A 100V TO-277B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 150°C

패키지: 3-PowerSMD, Flat Leads

재고2,112

100V

10A

700mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 100V

-

Surface Mount

3-PowerSMD, Flat Leads

TO-277B

-55°C ~ 150°C

FFPF30UP20STU

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 30A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack

재고13,944

200V

30A

1.15V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100µA @ 200V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

JANTXV1N3600

Microchip Technology

DIODE 50V 200MA DO7

Diode Type: -
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

50 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 50 V

-

Through Hole

DO-204AA, DO-7, Axial

DO-7

-65°C ~ 175°C

1N5393-TP

Micro Commercial Co

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

1.5A

1.1 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

SCS212AGC17

Rohm Semiconductor

DIODE SIC 650V 12A TO220ACFP

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 175°C

패키지: -

재고549

650 V

12A

1.55 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

240 µA @ 600 V

438pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220ACFP

175°C

SMBT1570LT3

onsemi

SS SOT223 DL XSTR SPCL TR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

S8CK-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고21,000

800 V

8A

985 mV @ 8 A

Standard Recovery >500ns, > 200mA (Io)

4 µs

10 µA @ 800 V

79pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

R5040PF

Microchip Technology

DIODE GEN PURP 400V 50A DO21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Press Fit
Package / Case: DO-208AA
Supplier Device Package: DO-21
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

400 V

50A

1.05 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Press Fit

DO-208AA

DO-21

-65°C ~ 175°C

1N5819H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

40 V

1A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

55pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

USD545E3

Microchip Technology

DIODE SCHOTTKY 45V 75A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

45 V

75A

680 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 mA @ 45 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 175°C

US1MWF-HF

Comchip Technology

DIODE GEN PURP 1KV 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

1A

1.65 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

15pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C