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MSS1P6HM3J/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 1A 60V MICROSMP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: MicroSMP
• Supplier Device Package: MicroSMP
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: MicroSMP

VS-30WQ04FNTRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Capacitance @ Vr, F: 189pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

R9G20209CSOO

Powerex Inc.

DIODE FAST REC R9G 900A 200V

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

GPP15A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

CSD02060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3.5A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HFA04TB60S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 42ns
• Current - Reverse Leakage @ Vr: 3µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HFA08TB120

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 95ns
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

S2KW8C-2N

Semtech Corporation

DIODE GEN PURP 8KV 6A MODULE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 8000V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 8V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 2µA @ 8000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: Module

VS-T40HF100

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 40A D-55

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module
• Supplier Device Package: D-55
• Operating Temperature - Junction: -

패키지: D-55 T-Module

UGE8HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 30µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

SBR8E20P5-7D

Diodes Incorporated

DIODE SBR 20V 8A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

FR302G A0G

TSC America Inc.

DIODE, FAST, 3A, 100V, 150NS, DO

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

US2JFL-TP

Micro Commercial Co

DIODE GEN PURP 600V 2A DO221AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 28pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SMA-FL)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-221AC, SMA Flat Leads

SBRT20U50SLPQ-13

Diodes Incorporated

DIODE SBR 50V 20A POWERDI5060-8

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 48ns
• Current - Reverse Leakage @ Vr: 500µA @ 50V
• Capacitance @ Vr, F: 350pF @ 50V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PowerDI5060-8
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: 8-PowerTDFN

S5BLHE3-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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UFR8780

Microchip Technology

DIODE GEN PURP 800V 85A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 85 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 800 V
• Capacitance @ Vr, F: 155pF @ 10V, 1MHz
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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SBRS8190NT3G

onsemi

DIODE SCHOTTKY 90V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 500 µV
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

NRVTS860EMFST1G

onsemi

DIODE SCHOTTKY 60V 8A 5DFN

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 620 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 45 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN, 5 Leads
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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VS-TH340BL16P-S2

Vishay General Semiconductor - Diodes Division

DIODE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

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FFSH5065B-F085

onsemi

DIODE SIL CARB 650V 50A TO247-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Capacitance @ Vr, F: 2030pF @ 1V, 100kHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

V30K45HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 30A FLATPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 mA @ 45 V
• Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: FlatPAK (5x6)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

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BD8150YS_S2_00001

Panjit International Inc.

DIODE SCHOTTKY 150V 8A TO252

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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PDS1040-13-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Supplier Device Package: PowerDI™ 5
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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FRS1MEQ-7

Diodes Incorporated

DIODE GEN PURP 1KV 1A DO219AA TR

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AA
• Supplier Device Package: DO-219AA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BR28_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 80V 2A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 80 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

YQ15RSM10SDTFTL1

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 15A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 680 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 175°C

패키지: -

JAN1N6622U-TR

Microchip Technology

DIODE GP 660V 1.2A A SQ-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 660 V
• Current - Average Rectified (Io): 1.2A
• Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 660 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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DR204T-R

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 400V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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