페이지 1654 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MA271110GL	Panasonic Electronic Components	DIODE GEN 80V 100MA SSSMINI2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SSSMini2-F3 Operating Temperature - Junction: 150°C (Max)	패키지: 2-SMD, Flat Lead	재고6,056,040	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	SSSMini2-F3	150°C (Max)
15MQ040NTR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-214AC, SMA	재고89,796	40V	3A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-40°C ~ 150°C
SBL845	Diodes Incorporated	DIODE SCHOTTKY 45V 8A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2	재고7,344	45V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
1N3167	Powerex Inc.	DIODE STUD MNT 240A 350V DO-9 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고4,144	-	-	-	-	-	-	-	-	-	-	-
VS-300UR10A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-205AB, DO-9, Stud	재고6,384	100V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 100V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
UPS540/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 5A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 540mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-216AA	재고5,248	40V	5A	540mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	250pF @ 4V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
SB530-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고2,544	30V	5A	480mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
AR1PD-M3/85A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1A DO220AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-220AA	재고7,216	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 200V	12.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
HER108G B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,424	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SB110-E3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 10V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고4,080	10V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 10V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N4937GHR0G	TSC America Inc.	DIODE, FAST, 1A, 600V, 200NS, AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,248	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
LL4148-M-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	패키지: DO-213AC, MINI-MELF, SOD-80	재고4,576	100V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
1SR154-600TE25	Rohm Semiconductor	DIODE GEN PURP 600V 1A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고379,200	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
STTH802B-TR	STMicroelectronics	DIODE GEN PURP 200V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 6µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 175°C (Max)	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고18,300	200V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	6µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	175°C (Max)
RB510VM-30FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	패키지: -	재고14,343	30 V	100mA	460 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	300 nA @ 10 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
SS24SHE3J_B-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	130pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2K-HF	Comchip Technology	DIODE GEN PURP 800V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	22pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N5417E3	Microchip Technology	DIODE GEN PURP 200V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SMS290	Diotec Semiconductor	DIODE SCHOTT 90V 2A MELF DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB (Plastic) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	재고14,850	90 V	2A	790 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 90 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB (Plastic)	-50°C ~ 150°C
SBA0820CS_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 20V 800MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고14,205	20 V	800mA	550 mV @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
CS3G-E3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.8 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 26pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2.8 µs	10 µA @ 400 V	26pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR460S-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	4A	1.25 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
FX2000G	Diotec Semiconductor	DIODE FAST D8X7.5_LOWRTH 400V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	재고2,871	400 V	20A	940 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 400 V	-	Through Hole	P600, Axial	P600	-50°C ~ 150°C
SK20H45	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 20A R-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: 200°C (Max)	패키지: -	Request a Quote	45 V	20A	550 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 45 V	-	Through Hole	R-6, Axial	R-6	200°C (Max)
SF1JDF-13	Diodes Incorporated	DIODE GEN PURP 600V 1A DFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: D-Flat Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	20pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	D-Flat	-55°C ~ 150°C
SK2C0A	Surge	DIODE SCHOTTKY 200V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 200 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 200 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CMR3-06-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
SF53-AP	Micro Commercial Co	DIODE GEN PURP 150V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	150 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	45pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

MA271110GL

Panasonic Electronic Components

DIODE GEN 80V 100MA SSSMINI2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SSSMini2-F3
Operating Temperature - Junction: 150°C (Max)

패키지: 2-SMD, Flat Lead

재고6,056,040

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

SSSMini2-F3

150°C (Max)

15MQ040NTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-214AC, SMA

재고89,796

40V

3A

490mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-40°C ~ 150°C

SBL845

Diodes Incorporated

DIODE SCHOTTKY 45V 8A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2

재고7,344

45V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 45V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

1N3167

Powerex Inc.

DIODE STUD MNT 240A 350V DO-9

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고4,144

-

VS-300UR10A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-205AB, DO-9, Stud

재고6,384

100V

300A

1.4V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

40mA @ 100V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 200°C

UPS540/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 5A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-216AA

재고5,248

40V

5A

540mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

250pF @ 4V, 1MHz

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

SB530-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고2,544

30V

5A

480mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

AR1PD-M3/85A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1A DO220AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

재고7,216

200V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 200V

12.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

HER108G B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,424

-

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SB110-E3/54

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고4,080

10V

1A

480mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 10V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

1N4937GHR0G

TSC America Inc.

DIODE, FAST, 1A, 600V, 200NS, AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,248

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 600V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

LL4148-M-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

패키지: DO-213AC, MINI-MELF, SOD-80

재고4,576

100V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

25nA @ 20V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

1SR154-600TE25

Rohm Semiconductor

DIODE GEN PURP 600V 1A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고379,200

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C (Max)

STTH802B-TR

STMicroelectronics

DIODE GEN PURP 200V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 6µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 175°C (Max)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고18,300

200V

8A

1.05V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

6µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

175°C (Max)

RB510VM-30FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 nA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고14,343

30 V

100mA

460 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

300 nA @ 10 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

SS24SHE3J_B-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

130pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RS2K-HF

Comchip Technology

DIODE GEN PURP 800V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

22pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N5417E3

Microchip Technology

DIODE GEN PURP 200V 3A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

200 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

-

Through Hole

B, Axial

-65°C ~ 175°C

SMS290

Diotec Semiconductor

DIODE SCHOTT 90V 2A MELF DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB (Plastic)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

재고14,850

90 V

2A

790 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 90 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB (Plastic)

-50°C ~ 150°C

SBA0820CS_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 20V 800MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 800 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고14,205

20 V

800mA

550 mV @ 800 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 20 V

-

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 150°C

CS3G-E3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2.8 µs

10 µA @ 400 V

26pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

MUR460S-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

4A

1.25 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 600 V

65pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

FX2000G

Diotec Semiconductor

DIODE FAST D8X7.5_LOWRTH 400V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

재고2,871

400 V

20A

940 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

5 µA @ 400 V

-

Through Hole

P600, Axial

P600

-50°C ~ 150°C

SK20H45

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 20A R-6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: 200°C (Max)

패키지: -

Request a Quote

45 V

20A

550 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 45 V

-

Through Hole

R-6, Axial

R-6

200°C (Max)

SF1JDF-13

Diodes Incorporated

DIODE GEN PURP 600V 1A DFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

20pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

D-Flat

-55°C ~ 150°C

SK2C0A

Surge

DIODE SCHOTTKY 200V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 200 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

2A

850 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 200 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CMR3-06-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 600V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

600 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

SF53-AP

Micro Commercial Co

DIODE GEN PURP 150V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

150 V

5A

950 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 150 V

45pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C