페이지 1658 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

기록 52,788
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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
10ETF02STRL
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 145ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,208
200V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
145ns
100µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-40°C ~ 150°C
R9G01018XX
Powerex Inc.

DIODE MODULE 1KV 1800A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 150mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
패키지: DO-200AB, B-PUK
재고4,672
1000V
1800A
1.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
25µs
150mA @ 1000V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
VS-15ETX06-N3
Vishay Semiconductor Diodes Division

DIODE HYPERFAS 15A 600V TO-220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고6,128
600V
15A
3.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
50µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
HSM150G/TR13
Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO215AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-215AA, SMB Gull Wing
재고4,288
50V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
DO-215AA, SMB Gull Wing
DO-215AA
-55°C ~ 175°C
MBRB10100-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,320
100V
10A
800mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
NRVUS240VT3G
ON Semiconductor

DIODE GEN PURP 400V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고5,024
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 400V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
hot FR604
SMC Diode Solutions

DIODE GEN PURP 400V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: R6, Axial
재고59,940
400V
6A
1.2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
100pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-65°C ~ 125°C
GP10K-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고6,224
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 800V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SK28-TP
Micro Commercial Co

DIODE SCHOTTKY 80V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA, HSMB
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-214AA, SMB
재고3,952
80V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 80V
-
Surface Mount
DO-214AA, SMB
DO-214AA, HSMB
-55°C ~ 125°C
SR103 R1G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-204AL, DO-41, Axial
재고5,248
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
BAV21W-HE3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 150V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 175°C (Max)
패키지: SOD-123
재고3,600
200V
250mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 150V
1.5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
175°C (Max)
V20PWM45-M3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 45V SLIMDPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 45V
  • Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,160
45V
20A
660mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 45V
3100pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
SlimDPAK
-40°C ~ 175°C
RFN5BM2STL
Rohm Semiconductor

DIODE GEN PURP 200V 5A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고23,088
200V
5A
980mV @ 5A
Standard Recovery >500ns, > 200mA (Io)
25ns
10µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
150°C (Max)
MBRD1060TR
SMC Diode Solutions

DIODE SCHOTTKY 60V DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 60V
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고23,832
60V
-
800mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
300pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C
hot CMPD5001 TR
Central Semiconductor Corp

DIODE GEN PURP 120V 400MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 100nA @ 90V
  • Capacitance @ Vr, F: 35pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-236-3, SC-59, SOT-23-3
재고27,876
120V
400mA
900mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
60ns
100nA @ 90V
35pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
CR8U-02FP
Central Semiconductor Corp

DIODE GEN PURP 200V 8A TO220FP-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP-2
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
200 V
8A
975 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
5 µA @ 200 V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220FP-2
-65°C ~ 150°C
SE8D30DHM3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A SLIMSMAW

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SlimSMAW (DO-221AD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고43,800
200 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
1.2 µs
10 µA @ 200 V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SlimSMAW (DO-221AD)
-55°C ~ 175°C
RS2KWF-HF
Comchip Technology

DIODE GEN PURP 800V 2A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
800 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 800 V
30pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
JAN1N3913A
Microchip Technology

DIODE GEN PURP 400V 50A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
400 V
50A
1.4 V @ 50 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 150°C
NRVBA120ET3G-VF01
onsemi

DIODE SCHOTTKY 20V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
20 V
1A
530 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 20 V
-
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
RB168MM-30TR
Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 nA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
재고102,147
30 V
1A
690 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 nA @ 30 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
1N4384-BK-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
Request a Quote
400 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
10 µs
10 µA @ 400 V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 200°C
RS1KAL
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A THIN SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고17,340
800 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
1 µA @ 800 V
7pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
Thin SMA
-55°C ~ 150°C
SSL34H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
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40 V
3A
410 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
V3NM103HM3-H
Vishay

3A, 100V, DFN3820A TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 100 V
  • Capacitance @ Vr, F: 440pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
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100 V
3A
690 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
120 µA @ 100 V
440pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
RGP30D
NTE Electronics, Inc

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -
패키지: -
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200 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-
VS-E5PH3012L-N3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 113 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고897
1200 V
30A
2.3 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
113 ns
50 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
SBT350-04R
onsemi

RECTIFIER DIODE, SCHOTTKY, 1 PHA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
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