페이지 1662 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CD0603-S0180R	Bourns Inc.	DIODE GEN PURP 80V 100MA 0603 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 75V Capacitance @ Vr, F: 4pF @ 1V, 100MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -40°C ~ 125°C	패키지: 0603 (1608 Metric)	재고3,680	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 75V	4pF @ 1V, 100MHz	Surface Mount	0603 (1608 Metric)	0603	-40°C ~ 125°C
1N4006GL-T	Diodes Incorporated	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고6,816	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 800V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
R7202606XXOO	Powerex Inc.	DIODE MODULE 2.6KV 600A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2600V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 50mA @ 2600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	패키지: DO-200AB, B-PUK	재고2,224	2600V	600A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	7µs	50mA @ 2600V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
FR85M05	GeneSiC Semiconductor	DIODE GEN PURP 1KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고2,512	1000V	85A	1.3V @ 85A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
MBRF16100HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,280	100V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HSM160JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO214BA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214BA	재고6,000	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	DO-214BA	DO-214BA	-55°C ~ 175°C
MBR1240MFST1G	ON Semiconductor	DIODE SCHOTTKY 40V 12A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 680mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	패키지: 8-PowerTDFN, 5 Leads	재고2,384	40V	12A	680mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
BYV25FX-600,127	WeEn Semiconductors	DIODE GEN PURP 600V 5A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2 Full Pack, Isolated Tab	재고2,976	600V	5A	1.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
SS26HE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고6,544	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
MUR190AHA0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 900V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 900V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고6,800	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
JANTX1N6629	Microsemi Corporation	DIODE UFAST REC 880V 1.4A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 880V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 880V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 150°C	패키지: E, Axial	재고6,540	880V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 880V	40pF @ 10V, 1MHz	Through Hole	E, Axial	-	-65°C ~ 150°C
S40KR	GeneSiC Semiconductor	DIODE GEN PURP REV 800V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-203AB, DO-5, Stud	재고6,204	800V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
IDP15E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 47ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-220-2	재고15,018	650V	15A	2.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	47ns	40µA @ 650V	-	Through Hole	TO-220-2	TO-220	-40°C ~ 175°C
STPS1H100AY	STMicroelectronics	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -40°C ~ 175°C	패키지: DO-214AC, SMA	재고142,212	100V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	4µA @ 100V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-40°C ~ 175°C
BA157-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고100,488	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
1N4007-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,452	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
SBR3060	Microchip Technology	RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	60 V	30A	680 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 60 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-55°C ~ 175°C
QR1006F_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	10A	1.55 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	3 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
SF54G-TP	Micro Commercial Co	DIODE GEN PURP 200V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	200 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
V10PL63HM3-I	Vishay General Semiconductor - Diodes Division	10A, 60V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 60 V Capacitance @ Vr, F: 2100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고19,470	60 V	10A	530 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 60 V	2100pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
EGL34BHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GP 100V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	100 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
1N1614RA	Solid State Inc.	DIODE GEN PURP REV 200V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
MER2DBF_R1_00701	Panjit International Inc.	DIODE GEN PURP 200V 2A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고54,000	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 175°C
VS-75EPU12L-N3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 75A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 265 ns Current - Reverse Leakage @ Vr: 420 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고2,652	1200 V	75A	2.55 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	265 ns	420 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
1F5-AP	Micro Commercial Co	DIODE GEN PURP 600V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: R-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	12pF @ 4V, 1MHz	Through Hole	R-1, Axial	R-1	-55°C ~ 150°C
SL36C	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 3A, 60V, DO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고17,955	60 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	220pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SMBD1083LT1	onsemi	SS SOT23 SWCH DIO SPCL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
B540CE-13	Diodes Incorporated	DIODE SCHOTTKY 40V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 340pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -	패키지: -	Request a Quote	40 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	340pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-

CD0603-S0180R

Bourns Inc.

DIODE GEN PURP 80V 100MA 0603

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 75V
Capacitance @ Vr, F: 4pF @ 1V, 100MHz
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C

패키지: 0603 (1608 Metric)

재고3,680

80V

100mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 75V

4pF @ 1V, 100MHz

Surface Mount

0603 (1608 Metric)

0603

-40°C ~ 125°C

1N4006GL-T

Diodes Incorporated

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고6,816

800V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 800V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

R7202606XXOO

Powerex Inc.

DIODE MODULE 2.6KV 600A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2600V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 50mA @ 2600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

재고2,224

2600V

600A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

7µs

50mA @ 2600V

-

Chassis Mount

DO-200AB, B-PUK

-

FR85M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고2,512

1000V

85A

1.3V @ 85A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

MBRF16100HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,280

100V

16A

850mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 100V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

HSM160JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 60V 1A DO214BA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214BA

재고6,000

60V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

DO-214BA

-55°C ~ 175°C

MBR1240MFST1G

ON Semiconductor

DIODE SCHOTTKY 40V 12A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: 8-PowerTDFN, 5 Leads

재고2,384

40V

12A

680mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

BYV25FX-600,127

WeEn Semiconductors

DIODE GEN PURP 600V 5A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2 Full Pack, Isolated Tab

재고2,976

600V

5A

1.9V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220FP

150°C (Max)

SS26HE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고6,544

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 60V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

MUR190AHA0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 900V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 900V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고6,800

900V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 900V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 175°C

JANTX1N6629

Microsemi Corporation

DIODE UFAST REC 880V 1.4A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 880V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 880V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 150°C

패키지: E, Axial

재고6,540

880V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

2µA @ 880V

40pF @ 10V, 1MHz

Through Hole

E, Axial

-

-65°C ~ 150°C

S40KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

재고6,204

800V

40A

1.1V @ 40A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 190°C

IDP15E65D2XKSA1

Infineon Technologies

DIODE GEN PURP 650V 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 47ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-220-2

재고15,018

650V

15A

2.3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

47ns

40µA @ 650V

-

Through Hole

TO-220-2

TO-220

-40°C ~ 175°C

STPS1H100AY

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: DO-214AC, SMA

재고142,212

100V

1A

770mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

4µA @ 100V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-40°C ~ 175°C

BA157-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고100,488

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

12pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 125°C

1N4007-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,452

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

SBR3060

Microchip Technology

RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

60 V

30A

680 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 mA @ 60 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-55°C ~ 175°C

QR1006F_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 10A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

10A

1.55 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

3 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 175°C

SF54G-TP

Micro Commercial Co

DIODE GEN PURP 200V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

200 V

5A

950 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

V10PL63HM3-I

Vishay General Semiconductor - Diodes Division

10A, 60V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고19,470

60 V

10A

530 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 60 V

2100pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

EGL34BHE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GP 100V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

100 V

500mA

1.25 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

1N1614RA

Solid State Inc.

DIODE GEN PURP REV 200V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

MER2DBF_R1_00701

Panjit International Inc.

DIODE GEN PURP 200V 2A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고54,000

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 175°C

VS-75EPU12L-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 75A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Current - Reverse Leakage @ Vr: 420 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고2,652

1200 V

75A

2.55 V @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

265 ns

420 µA @ 1200 V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

1F5-AP

Micro Commercial Co

DIODE GEN PURP 600V 1A R-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-1, Axial
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

12pF @ 4V, 1MHz

Through Hole

R-1, Axial

R-1

-55°C ~ 150°C

SL36C

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 3A, 60V, DO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고17,955

60 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

220pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SMBD1083LT1

onsemi

SS SOT23 SWCH DIO SPCL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

B540CE-13

Diodes Incorporated

DIODE SCHOTTKY 40V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 340pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -

패키지: -

Request a Quote

40 V

5A

550 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

340pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-