페이지 1668 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-8EWF02STRRPBF	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,992	200V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
MBR10H100HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2	재고6,704	100V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
D251N14B	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 100V 400A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,320	-	-	-	-	-	-	-	-	-	-	-
1N485	Microsemi Corporation	DIODE GEN PURP 180V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 180V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AA, DO-7, Axial	재고5,376	180V	100mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 180V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
VS-10TQ035STRLHM3	Vishay Semiconductor Diodes Division	DIODE RECT 35V 10A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 35V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,216	35V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 35V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VBT1080S-M3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 80V TO-263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,208	80V	10A	810mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 80V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
HER301G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고7,440	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYT53C-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 150V 1.9A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고5,264	150V	1.9A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SS29 R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고7,600	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
2G-TP	Micro Commercial Co	2A SILICON RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고4,032	-	-	-	-	-	-	-	-	-	-	-
ES1GLHRTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고5,792	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR204HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-204AC, DO-15, Axial	재고2,256	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 125°C
MSE07PDHM3/89A	Vishay Semiconductor Diodes Division	DIODE GP 200V 700MA MICROSMP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.08V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 175°C	패키지: MicroSMP	재고4,720	200V	700mA	1.08V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 200V	-	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 175°C
BAV116WS-7	Diodes Incorporated	DIODE GEN PURP 85V 215MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 85V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5nA @ 75V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SC-76, SOD-323	재고2,416	85V	215mA	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
CS3M-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 1000V 3.0A DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.8µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 26pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고3,024	1000V	2A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2.8µs	5µA @ 1000V	26pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
APTDF450U60G	Microsemi Corporation	DIODE MODULE 600V 500A LP4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115ns Current - Reverse Leakage @ Vr: 2.5mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: LP4 Operating Temperature - Junction: -	패키지: LP4	재고6,000	600V	500A	1.8V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	2.5mA @ 600V	-	Chassis Mount	LP4	LP4	-
1N2277	Solid State Inc.	DIODE GEN PURP 500V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	500 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
TUAU10JH	Taiwan Semiconductor Corporation	50NS, 10A, 600V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 135pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고15,000	600 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	135pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 175°C
BAT854W-QX	Nexperia USA Inc.	DIODE SCHOTTKY 40V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 25 V Capacitance @ Vr, F: 20pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C	패키지: -	재고26,808	40 V	200mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 25 V	20pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	150°C
JANS1N5617-TR	Microchip Technology	DIODE GEN PURP 400V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	A, Axial	A, Axial	-65°C ~ 200°C
US5AC-HF	Comchip Technology	DIODE GEN PURP 50V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
BAS29_S00Z	onsemi	DIODE GP 120V 200MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 90 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	패키지: -	Request a Quote	120 V	200mA	1.25 V @ 400 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 90 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
1N6841U3	Microchip Technology	DIODE SCHOTTKY 45V 10A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	45 V	10A	880 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	400pF @ 5V, 1MHz	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)	-65°C ~ 150°C
ES1LJ	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES3GC	MDD	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ND104N18KHPSA1	Infineon Technologies	DIODE GEN PURP 1.8KV 104A PB20-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 104A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB20-1 Operating Temperature - Junction: -40°C ~ 135°C	패키지: -	Request a Quote	1800 V	104A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1800 V	-	Chassis Mount	Module	BG-PB20-1	-40°C ~ 135°C
SFAF806GH	Taiwan Semiconductor Corporation	35NS, 8A, 400V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
S1D-LTP	Micro Commercial Co	DIODE GP 200V 1A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 200 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-55°C ~ 150°C

VS-8EWF02STRRPBF

Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,992

200V

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

100µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

MBR10H100HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

재고6,704

100V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

D251N14B

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 100V 400A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,320

-

1N485

Microsemi Corporation

DIODE GEN PURP 180V 100MA DO7

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25nA @ 180V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AA, DO-7, Axial

재고5,376

180V

100mA (DC)

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

25nA @ 180V

-

Through Hole

DO-204AA, DO-7, Axial

DO-7

-65°C ~ 175°C

VS-10TQ035STRLHM3

Vishay Semiconductor Diodes Division

DIODE RECT 35V 10A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 35V
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,216

35V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 35V

900pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

VBT1080S-M3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 80V TO-263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,208

80V

10A

810mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 80V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

HER301G A0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 50V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고7,440

50V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 50V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYT53C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 150V 1.9A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고5,264

150V

1.9A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SS29 R5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고7,600

90V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

2G-TP

Micro Commercial Co

2A SILICON RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고4,032

-

ES1GLHRTG

TSC America Inc.

DIODE, SUPER FAST, 1A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고5,792

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

8pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SR204HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-204AC, DO-15, Axial

재고2,256

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 125°C

MSE07PDHM3/89A

Vishay Semiconductor Diodes Division

DIODE GP 200V 700MA MICROSMP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.08V @ 700mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 175°C

패키지: MicroSMP

재고4,720

200V

700mA

1.08V @ 700mA

Standard Recovery >500ns, > 200mA (Io)

780ns

1µA @ 200V

-

Surface Mount

MicroSMP

-55°C ~ 175°C

BAV116WS-7

Diodes Incorporated

DIODE GEN PURP 85V 215MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 85V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5nA @ 75V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-76, SOD-323

재고2,416

85V

215mA

1.25V @ 150mA

Standard Recovery >500ns, > 200mA (Io)

3µs

5nA @ 75V

1.5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

CS3M-E3/I

Vishay Semiconductor Diodes Division

DIODE GPP 1000V 3.0A DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.8µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고3,024

1000V

2A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2.8µs

5µA @ 1000V

26pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

APTDF450U60G

Microsemi Corporation

DIODE MODULE 600V 500A LP4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115ns
Current - Reverse Leakage @ Vr: 2.5mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: LP4
Operating Temperature - Junction: -

패키지: LP4

재고6,000

600V

500A

1.8V @ 500A

Fast Recovery =< 500ns, > 200mA (Io)

115ns

2.5mA @ 600V

-

Chassis Mount

LP4

-

1N2277

Solid State Inc.

DIODE GEN PURP 500V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

500 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

TUAU10JH

Taiwan Semiconductor Corporation

50NS, 10A, 600V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 135pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고15,000

600 V

10A

1.7 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

135pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 175°C

BAT854W-QX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 200MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Capacitance @ Vr, F: 20pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C

패키지: -

재고26,808

40 V

200mA

550 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 25 V

20pF @ 1V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

150°C

JANS1N5617-TR

Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

400 V

1A

1.6 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

-

Through Hole

A, Axial

-65°C ~ 200°C

US5AC-HF

Comchip Technology

DIODE GEN PURP 50V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

5A

1 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 50 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

BAS29_S00Z

onsemi

DIODE GP 120V 200MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)

패키지: -

Request a Quote

120 V

200mA

1.25 V @ 400 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 90 V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C (Max)

1N6841U3

Microchip Technology

DIODE SCHOTTKY 45V 10A U3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3 (SMD-0.5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

45 V

10A

880 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

400pF @ 5V, 1MHz

Surface Mount

3-SMD, No Lead

U3 (SMD-0.5)

-65°C ~ 150°C

ES1LJ

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

18pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

ES3GC

MDD

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

ND104N18KHPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 104A PB20-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 104A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C

패키지: -

Request a Quote

1800 V

104A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1800 V

-

Chassis Mount

Module

BG-PB20-1

-40°C ~ 135°C

SFAF806GH

Taiwan Semiconductor Corporation

35NS, 8A, 400V, SUPER FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

400 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

60pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

S1D-LTP

Micro Commercial Co

DIODE GP 200V 1A DO214AA HSMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 200 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA, HSMB

-55°C ~ 150°C