페이지 170 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
AS4PJHM3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2.4A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.4A (DC) Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고4,816	600V	2.4A (DC)	962mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
S25DR	GeneSiC Semiconductor	DIODE GEN REV 200V 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고5,456	200V	25A	1.1V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	-	-65°C ~ 175°C
UFS370J/TR13	Microsemi Corporation	DIODE GEN PURP 700V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AB, SMC	재고3,952	700V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 700V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
UG15JTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고7,328	600V	15A	1.75V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
MBRF790HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 7.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고4,192	90V	7.5A	920mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
12TQ100STR	SMC Diode Solutions	DIODE SCHOTTKY 100V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 100V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,328	100V	15A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 100V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
EGF1CHE3/5CA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214BA	재고3,920	150V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
SBE002-TL-W	ON Semiconductor	DIODE SCHOTTKY 50V 1A 6CPH Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 80µA @ 25V Capacitance @ Vr, F: 52pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-74, SOT-457	재고6,064	50V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	10ns	80µA @ 25V	52pF @ 10V, 1MHz	Surface Mount	SC-74, SOT-457	6-CPH	-55°C ~ 125°C
SK310A M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,296	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N6479HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고3,152	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SF21GHB0G	TSC America Inc.	DIODE, SUPER FAST, 2A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고7,632	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1AFJ-M3/6A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.47µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-221AC, SMA Flat Leads	재고3,360	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.47µs	5µA @ 600V	7.9pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 150°C
S15MC R7G	TSC America Inc.	DIODE, 15A, 1000V, DO-214AB (SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 93pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고3,200	1000V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
S5MB R5G	TSC America Inc.	DIODE, 5A, 1000V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고6,400	1000V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
STTH5R06B	STMicroelectronics	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 175°C (Max)	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고12,024	600V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	20µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	175°C (Max)
PMEG2010AET,215	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1A SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 430mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고97,194	20V	1A (DC)	430mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	70pF @ 5V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
NSR02L30NXT5G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA 2DSN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3µA @ 30V Capacitance @ Vr, F: 7pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XFDFN Supplier Device Package: 2-DSN (0.60x0.30) Operating Temperature - Junction: 150°C (Max)	패키지: 2-XFDFN	재고84,060	30V	200mA (DC)	580mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	3µA @ 30V	7pF @ 5V, 1MHz	Surface Mount	2-XFDFN	2-DSN (0.60x0.30)	150°C (Max)
FR104	SMC Diode Solutions	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
1N2439	Solid State Inc.	DIODE GEN PURP 200V 150A DO8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
RB078BM10SFNSTL	Rohm Semiconductor	100V 5A, TO-252, ULTRA LOW IR SB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6.4 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-PLCC Supplier Device Package: 2-SMD Operating Temperature - Junction: 175°C	패키지: -	재고7,500	100 V	5A	740 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6.4 µA @ 100 V	-	Surface Mount	2-PLCC	2-SMD	175°C
1N914-1	Microchip Technology	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
S32130	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6622-TR	Microchip Technology	DIODE GEN PURP 660V 2A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 500 nA @ 660 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	660 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 660 V	10pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 150°C
FR207GP-TP	Micro Commercial Co	DIODE GEN PURP 1KV 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
MGR1206-BP	Micro Commercial Co	DIODE GEN PURP 800V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	100pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VSS8D2M12HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTT 120V 1.9A SLIMSMAW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 120 V Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	120 V	1.9A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 120 V	220pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C
V5N22HM3-H	Vishay	5A, 200V, DFN3820A TMBS RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.8A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: 285pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	200 V	1.8A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	285pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
SR505H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

AS4PJHM3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.4A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고4,816

600V

2.4A (DC)

962mV @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

10µA @ 600V

60pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

S25DR

GeneSiC Semiconductor

DIODE GEN REV 200V 25A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고5,456

200V

25A

1.1V @ 25A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-65°C ~ 175°C

UFS370J/TR13

Microsemi Corporation

DIODE GEN PURP 700V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AB, SMC

재고3,952

700V

3A

1.2V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 700V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

UG15JTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고7,328

600V

15A

1.75V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

30µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

150°C (Max)

MBRF790HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 7.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고4,192

90V

7.5A

920mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

12TQ100STR

SMC Diode Solutions

DIODE SCHOTTKY 100V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 100V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,328

100V

15A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 100V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

EGF1CHE3/5CA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214BA

재고3,920

150V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 150V

15pF @ 4V, 1MHz

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

SBE002-TL-W

ON Semiconductor

DIODE SCHOTTKY 50V 1A 6CPH

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 80µA @ 25V
Capacitance @ Vr, F: 52pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-CPH
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-74, SOT-457

재고6,064

50V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

10ns

80µA @ 25V

52pF @ 10V, 1MHz

Surface Mount

SC-74, SOT-457

6-CPH

-55°C ~ 125°C

SK310A M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,296

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N6479HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고3,152

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SF21GHB0G

TSC America Inc.

DIODE, SUPER FAST, 2A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고7,632

50V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

S1AFJ-M3/6A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-221AC, SMA Flat Leads

재고3,360

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.47µs

5µA @ 600V

7.9pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 150°C

S15MC R7G

TSC America Inc.

DIODE, 15A, 1000V, DO-214AB (SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고3,200

1000V

15A

1.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 1000V

93pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

S5MB R5G

TSC America Inc.

DIODE, 5A, 1000V, DO-214AA (SMB)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고6,400

1000V

5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 1000V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

STTH5R06B

STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 175°C (Max)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고12,024

600V

5A

2.9V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

20µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

175°C (Max)

PMEG2010AET,215

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 430mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고97,194

20V

1A (DC)

430mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

70pF @ 5V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

150°C (Max)

NSR02L30NXT5G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA 2DSN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 580mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3µA @ 30V
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XFDFN
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)

패키지: 2-XFDFN

재고84,060

30V

200mA (DC)

580mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

3µA @ 30V

7pF @ 5V, 1MHz

Surface Mount

2-XFDFN

2-DSN (0.60x0.30)

150°C (Max)

FR104

SMC Diode Solutions

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

1N2439

Solid State Inc.

DIODE GEN PURP 200V 150A DO8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

RB078BM10SFNSTL

Rohm Semiconductor

100V 5A, TO-252, ULTRA LOW IR SB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6.4 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-PLCC
Supplier Device Package: 2-SMD
Operating Temperature - Junction: 175°C

패키지: -

재고7,500

100 V

5A

740 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

6.4 µA @ 100 V

-

Surface Mount

2-PLCC

2-SMD

175°C

1N914-1

Microchip Technology

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

75 V

200mA

1.2 V @ 50 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

500 nA @ 75 V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

S32130

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

JANTX1N6622-TR

Microchip Technology

DIODE GEN PURP 660V 2A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

660 V

2A

1.4 V @ 1.2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

500 nA @ 660 V

10pF @ 10V, 1MHz

Through Hole

A, Axial

-65°C ~ 150°C

FR207GP-TP

Micro Commercial Co

DIODE GEN PURP 1KV 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

MGR1206-BP

Micro Commercial Co

DIODE GEN PURP 800V 12A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

12A

1.1 V @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

100pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VSS8D2M12HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTT 120V 1.9A SLIMSMAW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

120 V

1.9A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 120 V

220pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-40°C ~ 175°C

V5N22HM3-H

Vishay

5A, 200V, DFN3820A TMBS RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.8A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

200 V

1.8A

850 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 200 V

285pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 175°C

SR505H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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50 V

5A

700 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C