페이지 1717 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N6624US	Microsemi Corporation	DIODE GEN PURP 990V 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 990V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 500nA @ 990V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: SQ-MELF, A	재고6,352	990V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 990V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
SF10BG-T	Diodes Incorporated	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고60,000	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	75pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
R6201050XXOO	Powerex Inc.	DIODE MODULE 1KV 500A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	패키지: DO-200AA, A-PUK	재고3,008	1000V	500A	1.4V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 1000V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
SD103R16S15PV	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 110A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 2.23V @ 345A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 35mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-205AC, DO-30, Stud	재고7,424	1600V	110A	2.23V @ 345A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	35mA @ 1600V	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 125°C
SJPJ-D3	Sanken	DIODE SCHOTTKY 30V 1A SJP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C	패키지: 2-SMD, J-Lead	재고2,320	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	2-SMD, J-Lead	SJP	-40°C ~ 150°C
CGRC507-G	Comchip Technology	DIODE GEN PURP 1KV 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AB, SMC	재고5,312	1000V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
S1AB R5G	TSC America Inc.	DIODE, 1A, 50V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고2,512	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
APD240VGTR-G1	Diodes Incorporated	DIODE SCHOTTKY 40V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AC, DO-15, Axial	재고5,888	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 125°C
SR009 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 850mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,120	90V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1DLHM2G	TSC America Inc.	DIODE, 1A, 200V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고3,312	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BLHRQG	TSC America Inc.	DIODE, 1A, 100V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고6,624	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
STPS20120D	STMicroelectronics	DIODE SCHOTTKY 120V 20A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 930mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고6,480	120V	20A	930mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 120V	-	Through Hole	TO-220-2	TO-220AB	175°C (Max)
MBR1080G	ON Semiconductor	DIODE SCHOTTKY 80V 10A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2	재고5,360	80V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
CD1005-B0230	Bourns Inc.	DIODE SCHOTTKY 30V 200MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 30V Capacitance @ Vr, F: 12pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005 Operating Temperature - Junction: -40°C ~ 125°C	패키지: 1005 (2512 Metric)	재고3,808	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	12pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005	-40°C ~ 125°C
SBAS20HT1G	ON Semiconductor	DIODE GEN PURP 200V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SC-76, SOD-323	재고46,518	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	1µA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
STD12100	SMC Diode Solutions	DIODE SCHOTTKY 100V 12A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: 660pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	12A	750 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 100 V	660pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
GC9704-00	Microchip Technology	DIODE SCHOTTKY 5V 10MA CHIP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 5 V Current - Average Rectified (Io): 10mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 nA @ 1 V Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	5 V	10mA	600 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 1 V	0.8pF @ 0V, 1MHz	Surface Mount	Die	Chip	-55°C ~ 150°C
MBRS260T3H	onsemi	DIODE SCHOTTKY 60V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	60 V	2A	630 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 125°C
FR152GP-TP	Micro Commercial Co	DIODE GEN PURP 100V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
WNSC5D086506Q	WeEn Semiconductors	DIODE SIL CARB 650V 8A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 267pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
BAT54WS-S1	HY Electronic (Cayman) Limited	DIODE SCHOTTKY 30V 300MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	30 V	300mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C
VS-15EVU06HM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 15A SLIMDPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고12,651	600 V	15A	1.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	20 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
15SQ045	SMC Diode Solutions	DIODE SCHOTTKY 45V 15A R-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고45,702	45 V	15A	550 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
1N5818_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고11,079	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
VSS8D5M10-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTT 100V 2.3A SLIMSMAW Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.3A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 100 V Capacitance @ Vr, F: 480pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고47,823	100 V	2.3A	580 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 100 V	480pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-40°C ~ 175°C
1N2135RA	Solid State Inc.	DIODE GEN PURP REV 400V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	400 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
MURS1060FH-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Isolated Tab	ITO-220AC	-55°C ~ 175°C
JANTX1N3595UR-1-TR	Microchip Technology	DIODE GP 125V 150MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C

1N6624US

Microsemi Corporation

DIODE GEN PURP 990V 1A A-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 990V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SQ-MELF, A

재고6,352

990V

1A

1.55V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

500nA @ 990V

10pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 150°C

SF10BG-T

Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고60,000

100V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

75pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

R6201050XXOO

Powerex Inc.

DIODE MODULE 1KV 500A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

패키지: DO-200AA, A-PUK

재고3,008

1000V

500A

1.4V @ 800A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 1000V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

SD103R16S15PV

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 110A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: 2.23V @ 345A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 35mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-205AC, DO-30, Stud

재고7,424

1600V

110A

2.23V @ 345A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

35mA @ 1600V

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-40°C ~ 125°C

SJPJ-D3

Sanken

DIODE SCHOTTKY 30V 1A SJP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 2-SMD, J-Lead

재고2,320

30V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

-

Surface Mount

2-SMD, J-Lead

SJP

-40°C ~ 150°C

CGRC507-G

Comchip Technology

DIODE GEN PURP 1KV 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AB, SMC

재고5,312

1000V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

150°C (Max)

S1AB R5G

TSC America Inc.

DIODE, 1A, 50V, DO-214AA (SMB)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고2,512

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

APD240VGTR-G1

Diodes Incorporated

DIODE SCHOTTKY 40V 2A DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AC, DO-15, Axial

재고5,888

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 125°C

SR009 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 850mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,120

90V

500mA

850mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

65pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S1DLHM2G

TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고3,312

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 200V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

S1BLHRQG

TSC America Inc.

DIODE, 1A, 100V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고6,624

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 100V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

STPS20120D

STMicroelectronics

DIODE SCHOTTKY 120V 20A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고6,480

120V

20A

930mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

20µA @ 120V

-

Through Hole

TO-220-2

TO-220AB

175°C (Max)

MBR1080G

ON Semiconductor

DIODE SCHOTTKY 80V 10A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

재고5,360

80V

10A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 80V

-

Through Hole

TO-220-2

-65°C ~ 175°C

CD1005-B0230

Bourns Inc.

DIODE SCHOTTKY 30V 200MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 30V
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C

패키지: 1005 (2512 Metric)

재고3,808

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 30V

12pF @ 10V, 1MHz

Surface Mount

1005 (2512 Metric)

1005

-40°C ~ 125°C

SBAS20HT1G

ON Semiconductor

DIODE GEN PURP 200V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-76, SOD-323

재고46,518

200V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

1µA @ 200V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

STD12100

SMC Diode Solutions

DIODE SCHOTTKY 100V 12A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 660pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

12A

750 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 100 V

660pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

GC9704-00

Microchip Technology

DIODE SCHOTTKY 5V 10MA CHIP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 5 V
Current - Average Rectified (Io): 10mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Chip
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

5 V

10mA

600 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

100 nA @ 1 V

0.8pF @ 0V, 1MHz

Surface Mount

Die

Chip

-55°C ~ 150°C

MBRS260T3H

onsemi

DIODE SCHOTTKY 60V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

60 V

2A

630 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 125°C

FR152GP-TP

Micro Commercial Co

DIODE GEN PURP 100V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

WNSC5D086506Q

WeEn Semiconductors

DIODE SIL CARB 650V 8A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 267pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

8A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

267pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

BAT54WS-S1

HY Electronic (Cayman) Limited

DIODE SCHOTTKY 30V 300MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C

패키지: -

Request a Quote

30 V

300mA

1 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C

VS-15EVU06HM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A SLIMDPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고12,651

600 V

15A

1.8 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

20 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C

15SQ045

SMC Diode Solutions

DIODE SCHOTTKY 45V 15A R-6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고45,702

45 V

15A

550 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

-

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

1N5818_R2_00001

Panjit International Inc.

DIODE SCHOTTKY 30V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고11,079

30 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 30 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

VSS8D5M10-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTT 100V 2.3A SLIMSMAW

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.3A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고47,823

100 V

2.3A

580 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 100 V

480pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-40°C ~ 175°C

1N2135RA

Solid State Inc.

DIODE GEN PURP REV 400V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

400 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

MURS1060FH-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

10A

1.6 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

-

Through Hole

TO-220-2 Isolated Tab

ITO-220AC

-55°C ~ 175°C

JANTX1N3595UR-1-TR

Microchip Technology

DIODE GP 125V 150MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

125 V

150mA

920 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

1 nA @ 125 V

-

Surface Mount

DO-213AA

-65°C ~ 175°C