페이지 1731 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
FR1K-13-F	Diodes Incorporated	DIODE GEN PURP 800V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AA, SMB	재고420,000	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
A397PE	Powerex Inc.	DIODE GEN PURP 1.5KV 400A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-200AA, A-PUK	재고6,528	1500V	400A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 125°C
VS-40HFR140	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 160°C	패키지: DO-203AB, DO-5, Stud	재고4,752	1400V	40A	1.5V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 160°C
1N3611	Semtech Corporation	D MET 1A STD 600V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,496	-	-	-	-	-	-	-	-	-	-	-
SFAF1606GHC0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 400V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고6,608	400V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
6A40GHB0G	TSC America Inc.	DIODE, 6A, 400V, AEC-Q101, R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: R6, Axial	재고4,720	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
12TQ150STR	SMC Diode Solutions	DIODE SCHOTTKY 150V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 860mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,008	150V	15A	860mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 150V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
UH3C-E3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AB, SMC	재고138,000	150V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
SE10PGHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-220AA	재고3,456	400V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 400V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
GP10M-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,064	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1000V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RSFAL MHG	TSC America Inc.	DIODE, FAST, 0.5A, 50V, 150NS, S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,712	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
PMEG3010BEA,135	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 560mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 30V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	패키지: SC-76, SOD-323	재고3,200	30V	1A (DC)	560mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 30V	70pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
STTH810GY-TR	STMicroelectronics	DIODE GEN PURP 1KV 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,800	1000V	8A	2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	5µA @ 1000V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
STTH6010WY	STMicroelectronics	DIODE GEN PURP 1KV 60A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115ns Current - Reverse Leakage @ Vr: 20µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C	패키지: DO-247-2 (Straight Leads)	재고4,752	1000V	60A	2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	20µA @ 1000V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
BAT54,235	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고2,992	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
1N3975	Solid State Inc.	DIODE GEN PURP 800V 100A DO8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	800 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 800 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
1N2057R	Solid State Inc.	DIODE GEN PURP REV 200V 275A DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	패키지: -	Request a Quote	200 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 200 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C
R2000FGP-TPS01	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	2000 V	500mA	2.5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 2000 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
GE1301	Harris Corporation	DIODE GEN PURP 50V 6A AL-4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204, Axial Supplier Device Package: AL-4 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	50 V	6A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	100pF @ 4V, 1MHz	Through Hole	DO-204, Axial	AL-4	-65°C ~ 175°C
PMEG4005AESFCYL	Nexperia USA Inc.	PMEG4005AESF - 40V, 0.5A LOW VF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 820 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.25 ns Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: 18pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	500mA	820 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	1.25 ns	80 µA @ 40 V	18pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	DSN0603-2	150°C
1N1204RB	Solid State Inc.	DIODE GEN PURP REV 400V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	400 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
SM4007	Diotec Semiconductor	DIODE GP 1KV 1A MELF DO-213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB (Plastic) Operating Temperature - Junction: -50°C ~ 175°C	패키지: -	재고260,808	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1000 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB (Plastic)	-50°C ~ 175°C
FR156GP-AP	Micro Commercial Co	DIODE GEN PURP 800V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
DSB0-5A40-TR	Microchip Technology	DIODE SCHOTTKY 40V 500MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote	40 V	500mA	650 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 40 V	60pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 125°C
VS-2EAH02HM3-H	Vishay General Semiconductor - Diodes Division	2A, 200V, FRED HYPERFAST RECTIFI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고11,400	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	-	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-55°C ~ 175°C
JAN1N3295	Microchip Technology	DIODE GEN PURP 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	-	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1000 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SR1204H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 12A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	40 V	12A	550 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
MBRB1660	SMC Diode Solutions	DIODE SCHOTTKY 60V 16A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	60 V	16A	750 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C

FR1K-13-F

Diodes Incorporated

DIODE GEN PURP 800V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

재고420,000

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

A397PE

Powerex Inc.

DIODE GEN PURP 1.5KV 400A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-200AA, A-PUK

재고6,528

1500V

400A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

Chassis Mount

DO-200AA, A-PUK

-

-40°C ~ 125°C

VS-40HFR140

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 160°C

패키지: DO-203AB, DO-5, Stud

재고4,752

1400V

40A

1.5V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

4.5mA @ 1400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 160°C

1N3611

Semtech Corporation

D MET 1A STD 600V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,496

-

SFAF1606GHC0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 400V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고6,608

400V

16A

1.3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

100pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

6A40GHB0G

TSC America Inc.

DIODE, 6A, 400V, AEC-Q101, R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: R6, Axial

재고4,720

400V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

60pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-55°C ~ 150°C

12TQ150STR

SMC Diode Solutions

DIODE SCHOTTKY 150V 15A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,008

150V

15A

860mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 150V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

UH3C-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AB, SMC

재고138,000

150V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 150V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

SE10PGHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

재고3,456

400V

1A

1.05V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

5µA @ 400V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

GP10M-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,064

1000V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1000V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

RSFAL MHG

TSC America Inc.

DIODE, FAST, 0.5A, 50V, 150NS, S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,712

50V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

PMEG3010BEA,135

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 560mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 30V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

재고3,200

30V

1A (DC)

560mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 30V

70pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

STTH810GY-TR

STMicroelectronics

DIODE GEN PURP 1KV 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,800

1000V

8A

2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

5µA @ 1000V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

STTH6010WY

STMicroelectronics

DIODE GEN PURP 1KV 60A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115ns
Current - Reverse Leakage @ Vr: 20µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C

패키지: DO-247-2 (Straight Leads)

재고4,752

1000V

60A

2V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

115ns

20µA @ 1000V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

-40°C ~ 175°C

BAT54,235

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고2,992

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

150°C (Max)

1N3975

Solid State Inc.

DIODE GEN PURP 800V 100A DO8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

800 V

100A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 800 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

1N2057R

Solid State Inc.

DIODE GEN PURP REV 200V 275A DO9

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -65°C ~ 190°C

패키지: -

Request a Quote

200 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 200 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-9

-65°C ~ 190°C

R2000FGP-TPS01

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

2000 V

500mA

2.5 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 2000 V

30pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

GE1301

Harris Corporation

DIODE GEN PURP 50V 6A AL-4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204, Axial
Supplier Device Package: AL-4
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

50 V

6A

975 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

100pF @ 4V, 1MHz

Through Hole

DO-204, Axial

AL-4

-65°C ~ 175°C

PMEG4005AESFCYL

Nexperia USA Inc.

PMEG4005AESF - 40V, 0.5A LOW VF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.25 ns
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

500mA

820 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

1.25 ns

80 µA @ 40 V

18pF @ 1V, 1MHz

Surface Mount

0201 (0603 Metric)

DSN0603-2

150°C

1N1204RB

Solid State Inc.

DIODE GEN PURP REV 400V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

400 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

SM4007

Diotec Semiconductor

DIODE GP 1KV 1A MELF DO-213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB (Plastic)
Operating Temperature - Junction: -50°C ~ 175°C

패키지: -

재고260,808

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 1000 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB (Plastic)

-50°C ~ 175°C

FR156GP-AP

Micro Commercial Co

DIODE GEN PURP 800V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

DSB0-5A40-TR

Microchip Technology

DIODE SCHOTTKY 40V 500MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

40 V

500mA

650 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 40 V

60pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 125°C

VS-2EAH02HM3-H

Vishay General Semiconductor - Diodes Division

2A, 200V, FRED HYPERFAST RECTIFI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고11,400

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

-

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-55°C ~ 175°C

JAN1N3295

Microchip Technology

DIODE GEN PURP 100A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

-

100A

1.55 V @ 310 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 1000 V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

SR1204H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 12A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

40 V

12A

550 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

MBRB1660

SMC Diode Solutions

DIODE SCHOTTKY 60V 16A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

60 V

16A

750 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 60 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C