페이지 1739 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
B560C-13-01-F	Diodes Incorporated	DIODE SCHOTTKY 60V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고4,976	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	300pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
UG06C-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 600MA MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	패키지: MPG06, Axial	재고5,792	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
QRS1420T30	Powerex Inc.	DIODE MODULE 1.4KV 123A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 123A Voltage - Forward (Vf) (Max) @ If: 3.8V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 1mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	패키지: Module	재고3,200	1400V	123A	3.8V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1mA @ 1400V	-	Chassis Mount	Module	Module	-
A430P	Powerex Inc.	DIODE MODULE 1KV 1000A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1000A Voltage - Forward (Vf) (Max) @ If: 1.42V @ 3140A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	패키지: DO-200AB, B-PUK	재고5,056	1000V	1000A	1.42V @ 3140A	Standard Recovery >500ns, > 200mA (Io)	10µs	50mA @ 1000V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
S320K	GeneSiC Semiconductor	DIODE GEN PURP 800V 320A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고2,832	800V	320A	1.2V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 180°C
VS-6FR80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 6A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 19A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고7,152	800V	6A	1.1V @ 19A	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
SFAF1603G C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 150V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고6,160	150V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	130pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
AB01B	Sanken	DIODE GEN PURP 800V 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고6,528	800V	500mA	2V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
CFRB305-G	Comchip Technology	DIODE GEN PURP 600V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고5,440	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SS115L RTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,712	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
PMEG4010ESBZ	Nexperia USA Inc.	DIODE SCHOTTKY 40V 1A DSN1006-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 610mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.9ns Current - Reverse Leakage @ Vr: 40µA @ 40V Capacitance @ Vr, F: 22pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: DSN1006-2 Operating Temperature - Junction: 150°C (Max)	패키지: 2-XDFN	재고3,040	40V	1A	610mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	2.9ns	40µA @ 40V	22pF @ 10V, 1MHz	Surface Mount	2-XDFN	DSN1006-2	150°C (Max)
VS-E4PH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO-247 L Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고5,200	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
NRVA4004T3G	ON Semiconductor	DIODE GEN PURP 400V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고186,000	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 175°C
STD1060TR	SMC Diode Solutions	DIODE SCHOTTKY 60V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 850µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,864	60V	-	650mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	850µA @ 60V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
PD3S130L-7	Diodes Incorporated	DIODE SCHOTTKY 30V 1A POWERDI323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: PowerDI? 323 Supplier Device Package: PowerDI? 323 Operating Temperature - Junction: -65°C ~ 125°C	패키지: PowerDI? 323	재고916,812	30V	1A	420mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	40pF @ 10V, 1MHz	Surface Mount	PowerDI? 323	PowerDI? 323	-65°C ~ 125°C
R42100	Microchip Technology	DIODE GP REV 1KV 125A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	1000 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1000 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
MURS3GB-TP	Micro Commercial Co	DIODE GEN PURP 400V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고23,790	400 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MBR30170MFST3G	onsemi	DIODE SCHOTTKY 170V 30A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 170 V Capacitance @ Vr, F: 821pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	170 V	30A	890 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 170 V	821pF @ 1V, 1MHz	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
RB551V-30-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 30V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 490 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고17,382	30 V	500mA	490 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	25pF @ 4V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 125°C
SMS320	Diotec Semiconductor	SCHOTTKY MELF 20V 3A 150C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 150°C
V10PM63-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 4.5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.5A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 60 V Capacitance @ Vr, F: 2060pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고19,500	60 V	4.5A	650 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	25 µA @ 60 V	2060pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
STPSC15H12G2Y-TR	STMicroelectronics	DIODE SIL CARB 1.2KV 15A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 1200 V Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK HV Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고2,970	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK HV	-40°C ~ 175°C
RSX078BM2SFHHTL	Rohm Semiconductor	200V 5A, TO-252, ULTRA LOW IR SB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	200 V	5A	920 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 nA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	175°C
1N5418E3-TR	Microchip Technology	DIODE GEN PURP 400V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
1N1343R	Solid State Inc.	DIODE GEN PURP REV 150V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	150 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
STTH15RQ06WY	STMicroelectronics	DIODE GEN PURP 600V 15A DO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-247-2 (Straight Leads) Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고24	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
R3620	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
ESH2DAH	Taiwan Semiconductor Corporation	25NS, 1A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고45,000	200 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C

B560C-13-01-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고4,976

60V

5A

700mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

300pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

UG06C-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 600MA MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 600mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

패키지: MPG06, Axial

재고5,792

150V

600mA

950mV @ 600mA

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 150V

9pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

QRS1420T30

Powerex Inc.

DIODE MODULE 1.4KV 123A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 123A
Voltage - Forward (Vf) (Max) @ If: 3.8V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 1mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -

패키지: Module

재고3,200

1400V

123A

3.8V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

1mA @ 1400V

-

Chassis Mount

Module

-

A430P

Powerex Inc.

DIODE MODULE 1KV 1000A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1000A
Voltage - Forward (Vf) (Max) @ If: 1.42V @ 3140A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10µs
Current - Reverse Leakage @ Vr: 50mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

재고5,056

1000V

1000A

1.42V @ 3140A

Standard Recovery >500ns, > 200mA (Io)

10µs

50mA @ 1000V

-

Chassis Mount

DO-200AB, B-PUK

-

S320K

GeneSiC Semiconductor

DIODE GEN PURP 800V 320A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 320A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고2,832

800V

320A

1.2V @ 300A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 180°C

VS-6FR80

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 6A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 19A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고7,152

800V

6A

1.1V @ 19A

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

SFAF1603G C0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 150V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고6,160

150V

16A

975mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 150V

130pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

AB01B

Sanken

DIODE GEN PURP 800V 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고6,528

800V

500mA

2V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 800V

-

Through Hole

Axial

-40°C ~ 150°C

CFRB305-G

Comchip Technology

DIODE GEN PURP 600V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고5,440

600V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

SS115L RTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,712

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

PMEG4010ESBZ

Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A DSN1006-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.9ns
Current - Reverse Leakage @ Vr: 40µA @ 40V
Capacitance @ Vr, F: 22pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: DSN1006-2
Operating Temperature - Junction: 150°C (Max)

패키지: 2-XDFN

재고3,040

40V

1A

610mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

2.9ns

40µA @ 40V

22pF @ 10V, 1MHz

Surface Mount

2-XDFN

DSN1006-2

150°C (Max)

VS-E4PH3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO-247 L

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고5,200

600V

30A

2V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

50µA @ 600V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

NRVA4004T3G

ON Semiconductor

DIODE GEN PURP 400V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고186,000

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 175°C

STD1060TR

SMC Diode Solutions

DIODE SCHOTTKY 60V DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 650mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 850µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,864

60V

-

650mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

850µA @ 60V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

PD3S130L-7

Diodes Incorporated

DIODE SCHOTTKY 30V 1A POWERDI323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 30V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: PowerDI? 323
Supplier Device Package: PowerDI? 323
Operating Temperature - Junction: -65°C ~ 125°C

패키지: PowerDI? 323

재고916,812

30V

1A

420mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 30V

40pF @ 10V, 1MHz

Surface Mount

PowerDI? 323

-65°C ~ 125°C

R42100

Microchip Technology

DIODE GP REV 1KV 125A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

1000 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1000 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

MURS3GB-TP

Micro Commercial Co

DIODE GEN PURP 400V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고23,790

400 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

MBR30170MFST3G

onsemi

DIODE SCHOTTKY 170V 30A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 170 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 170 V
Capacitance @ Vr, F: 821pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

170 V

30A

890 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 170 V

821pF @ 1V, 1MHz

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

RB551V-30-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 30V 500MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고17,382

30 V

500mA

490 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

25pF @ 4V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 125°C

SMS320

Diotec Semiconductor

SCHOTTKY MELF 20V 3A 150C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

20 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB

-50°C ~ 150°C

V10PM63-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 4.5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 4.5A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고19,500

60 V

4.5A

650 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

25 µA @ 60 V

2060pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

STPSC15H12G2Y-TR

STMicroelectronics

DIODE SIL CARB 1.2KV 15A D2PAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 90 µA @ 1200 V
Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고2,970

1200 V

15A

1.5 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

90 µA @ 1200 V

1200pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK HV

-40°C ~ 175°C

RSX078BM2SFHHTL

Rohm Semiconductor

200V 5A, TO-252, ULTRA LOW IR SB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 175°C

패키지: -

Request a Quote

200 V

5A

920 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 nA @ 200 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

175°C

1N5418E3-TR

Microchip Technology

DIODE GEN PURP 400V 3A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

400 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 400 V

-

Through Hole

B, Axial

-65°C ~ 175°C

1N1343R

Solid State Inc.

DIODE GEN PURP REV 150V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

150 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 150 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

STTH15RQ06WY

STMicroelectronics

DIODE GEN PURP 600V 15A DO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고24

600 V

15A

2.95 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

20 µA @ 600 V

-

Through Hole

DO-247-2 (Straight Leads)

DO-247

-40°C ~ 175°C

R3620

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

ESH2DAH

Taiwan Semiconductor Corporation

25NS, 1A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고45,000

200 V

2A

900 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C