페이지 1755 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R9G21609ASOO	Powerex Inc.	DIODE FAST REC R9G 900A 1600V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고5,936	-	-	-	-	-	-	-	-	-	-	-
STTH30L06PI	STMicroelectronics	DIODE GEN PURP 600V 30A DOP3I Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DOP3I-2 Insulated (Straight Leads) Supplier Device Package: DOP3I Operating Temperature - Junction: 175°C (Max)	패키지: DOP3I-2 Insulated (Straight Leads)	재고6,992	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	25µA @ 600V	-	Through Hole	DOP3I-2 Insulated (Straight Leads)	DOP3I	175°C (Max)
UF3006-G	Comchip Technology	DIODE GEN PURP 600V 3A DO201AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-201AA, DO-27, Axial	재고4,960	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	30pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	DO-27	-55°C ~ 125°C
AS3BJ-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AA, SMB	재고276,000	600V	3A	1.05V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	20µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
HER154G B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1.5A, 300 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고4,512	300V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
GPP20M-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고283,320	1000V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5817HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고4,640	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
BAW76-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고5,600	50V	300mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
GL41Y-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고185,760	1600V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1600V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
CRS03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	패키지: SOD-123F	재고6,528	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	40pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
EGP50G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AA, DO-27, Axial	재고6,800	400V	5A	1.25V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	75pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
RB521CM-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 100MA VMN2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: VMN2M Operating Temperature - Junction: 150°C (Max)	패키지: 2-SMD, Flat Lead	재고678,000	30V	100mA	350mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 10V	-	Surface Mount	2-SMD, Flat Lead	VMN2M	150°C (Max)
SE10DB-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 15µA @ 100V Capacitance @ Vr, F: 67pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고18,684	100V	3A	1.15V @ 10A	Standard Recovery >500ns, > 200mA (Io)	3µs	15µA @ 100V	67pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
VS-HFA16TB120SR-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1200 V	16A	3.93 V @ 32 A	Fast Recovery =< 500ns, > 200mA (Io)	135 ns	20 µA @ 1200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
1N1196RA	Solid State Inc.	DIODE GEN PURP REV 400V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	400 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
VS-8EVL06HM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A SLIMDPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 56 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	8A	1.35 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	56 ns	5 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
10A07-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	10A	1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
ER3C_R1_00001	Panjit International Inc.	DIODE GEN PURP 150V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
GS2006HE_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A SOD123HE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SD103BW-7-F-79	Diodes Incorporated	DIODE SCHOTTKY 30V 350MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 5 µA @ 20 V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	30 V	350mA	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	5 µA @ 20 V	28pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1N3911R	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 15 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	200 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
SMBT1348LT1	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX1N3595US-1	Microchip Technology	DIODE GP 125V 200MA SQ-MELF B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	125 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
JANTX1N5712UB	Microchip Technology	DIODE SCHOTTKY UB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: 150°C (Max)	패키지: -	Request a Quote	-	-	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	-	2pF @ 0V, 1MHz	Surface Mount	4-SMD, No Lead	UB	150°C (Max)
CGRC306-HF	Comchip Technology	DIODE GEN PURP 800V 3A DO214AB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	800 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	150°C
B240S1F-7-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	100pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
JANS1N5822-TR	Microchip Technology	DIODE SCHOTTKY 40V 3A B AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 125°C
1N1196	Solid State Inc.	DIODE GEN PURP 400V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	400 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C

R9G21609ASOO

Powerex Inc.

DIODE FAST REC R9G 900A 1600V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고5,936

-

STTH30L06PI

STMicroelectronics

DIODE GEN PURP 600V 30A DOP3I

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DOP3I-2 Insulated (Straight Leads)
Supplier Device Package: DOP3I
Operating Temperature - Junction: 175°C (Max)

패키지: DOP3I-2 Insulated (Straight Leads)

재고6,992

600V

30A

1.55V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

25µA @ 600V

-

Through Hole

DOP3I-2 Insulated (Straight Leads)

DOP3I

175°C (Max)

UF3006-G

Comchip Technology

DIODE GEN PURP 600V 3A DO201AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-201AA, DO-27, Axial

재고4,960

600V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

30pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

DO-27

-55°C ~ 125°C

AS3BJ-M3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

재고276,000

600V

3A

1.05V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

20µA @ 600V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

HER154G B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 300

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고4,512

300V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

35pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

GPP20M-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고283,320

1000V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

1N5817HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고4,640

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

55pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

BAW76-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고5,600

50V

300mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

GL41Y-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고185,760

1600V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1600V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

CRS03(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: SOD-123F

재고6,528

30V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

40pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

EGP50G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AA, DO-27, Axial

재고6,800

400V

5A

1.25V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

75pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

RB521CM-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA VMN2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: VMN2M
Operating Temperature - Junction: 150°C (Max)

패키지: 2-SMD, Flat Lead

재고678,000

30V

100mA

350mV @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 10V

-

Surface Mount

2-SMD, Flat Lead

VMN2M

150°C (Max)

SE10DB-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 15µA @ 100V
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고18,684

100V

3A

1.15V @ 10A

Standard Recovery >500ns, > 200mA (Io)

3µs

15µA @ 100V

67pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

VS-HFA16TB120SR-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 3.93 V @ 32 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1200 V

16A

3.93 V @ 32 A

Fast Recovery =< 500ns, > 200mA (Io)

135 ns

20 µA @ 1200 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

1N1196RA

Solid State Inc.

DIODE GEN PURP REV 400V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

400 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

VS-8EVL06HM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A SLIMDPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 56 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

8A

1.35 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

56 ns

5 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C

10A07-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

10A

1 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

150pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

ER3C_R1_00001

Panjit International Inc.

DIODE GEN PURP 150V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

150 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 150 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

GS2006HE_R1_00001

Panjit International Inc.

DIODE GEN PURP 600V 2A SOD123HE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

600 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 600 V

12pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

SD103BW-7-F-79

Diodes Incorporated

DIODE SCHOTTKY 30V 350MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

30 V

350mA

600 mV @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

5 µA @ 20 V

28pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

1N3911R

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

200 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

15 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

SMBT1348LT1

onsemi

SS SOT23 GP XSTR SPCL TR

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

JANTX1N3595US-1

Microchip Technology

DIODE GP 125V 200MA SQ-MELF B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

125 V

200mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

1 nA @ 125 V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

JANTX1N5712UB

Microchip Technology

DIODE SCHOTTKY UB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: 150°C (Max)

패키지: -

Request a Quote

-

1 V @ 35 mA

Small Signal =< 200mA (Io), Any Speed

-

2pF @ 0V, 1MHz

Surface Mount

4-SMD, No Lead

UB

150°C (Max)

CGRC306-HF

Comchip Technology

DIODE GEN PURP 800V 3A DO214AB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

800 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

150°C

B240S1F-7-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

100pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

JANS1N5822-TR

Microchip Technology

DIODE SCHOTTKY 40V 3A B AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Through Hole

B, Axial

-65°C ~ 125°C

1N1196

Solid State Inc.

DIODE GEN PURP 400V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

400 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C