페이지 1761 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLS03(T6L,SHINA,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	패키지: L-FLAT?	재고4,448	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
1N4006-N-0-3-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,672	800V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
SS1P3LHE3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1.5A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고2,400	30V	1.5A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
VS-SD2500C24K	Vishay Semiconductor Diodes Division	DIODE STD REC 3000A 2400VK-PUK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400V Current - Average Rectified (Io): 3000A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 4000A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-200AC, K-PUK	재고4,576	2400V	3000A	1.14V @ 4000A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Clamp On	DO-200AC, K-PUK	DO-200AC, K-PUK	-40°C ~ 180°C
VS-301URA200	Vishay Semiconductor Diodes Division	DIODE GP 2KV 330A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고6,128	2000V	330A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
VS-1N3624R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 700V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 900µA @ 700V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-203AA, DO-4, Stud	재고6,000	700V	12A	1.35V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	900µA @ 700V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
VS-18TQ035PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 18A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5mA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고5,408	35V	18A	600mV @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.5mA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SFS1008G MNG	TSC America Inc.	DIODE, SUPER FAST, 10A, 600V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,192	600V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
CGRB301-G	Comchip Technology	DIODE GEN PURP 50V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AA, SMB	재고2,832	50V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
SE10PBHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-220AA	재고5,680	100V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 100V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
CDBMTS2200-HF	Comchip Technology	DIODE SCHOTTKY 200V 2A SOD123S Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123S Supplier Device Package: SOD-123S Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123S	재고2,384	200V	2A (DC)	920mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	160pF @ 4V, 1MHz	Surface Mount	SOD-123S	SOD-123S	-55°C ~ 150°C
ES1JL MHG	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,136	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
F1T1G A0G	TSC America Inc.	DIODE, FAST, 1A, 50V, 150NS, TS- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고6,896	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS15L RQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고5,136	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAV21WS-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	패키지: SC-76, SOD-323	재고5,296	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
TST30U45C C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 30A, 45 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고7,968	45V	15A	540mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
RBR2LAM60ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 2A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고9,051	60 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	75 µA @ 60 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
HS1D	Surge	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2025	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANS1N6873UTK2AS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NDSH10120C-F155	onsemi	SIC DIODE GEN2.0 1200V TO247-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV Capacitance @ Vr, F: 680pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1200 V	12A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1.2 kV	680pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
HSM221C-JTR-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SB1030_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	30 V	10A	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
AS3BD-M3-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 200V 3A DO214AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	200 V	3A	1.05 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
S40A10	Microchip Technology	DIODE GEN PURP 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -	패키지: -	Request a Quote	-	40A	1.1 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-
RB520S-30GDTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NTE579	NTE Electronics, Inc	DIODE SCHOTTKY 90V 3A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	90 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 90 V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-65°C ~ 150°C
ES5D-T-M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 185pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	185pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

CLS03(T6L,SHINA,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

패키지: L-FLAT?

재고4,448

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

1N4006-N-0-3-AP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,672

800V

1A (DC)

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

SS1P3LHE3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1.5A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고2,400

30V

1.5A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

VS-SD2500C24K

Vishay Semiconductor Diodes Division

DIODE STD REC 3000A 2400VK-PUK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2400V
Current - Average Rectified (Io): 3000A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 4000A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: DO-200AC, K-PUK
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-200AC, K-PUK

재고4,576

2400V

3000A

1.14V @ 4000A

Fast Recovery =< 500ns, > 200mA (Io)

-

Clamp On

DO-200AC, K-PUK

-40°C ~ 180°C

VS-301URA200

Vishay Semiconductor Diodes Division

DIODE GP 2KV 330A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고6,128

2000V

330A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

VS-1N3624R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 700V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 900µA @ 700V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AA, DO-4, Stud

재고6,000

700V

12A

1.35V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

900µA @ 700V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 200°C

VS-18TQ035PBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 18A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.5mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고5,408

35V

18A

600mV @ 18A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.5mA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SFS1008G MNG

TSC America Inc.

DIODE, SUPER FAST, 10A, 600V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,192

600V

10A

1.7V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1µA @ 600V

50pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

CGRB301-G

Comchip Technology

DIODE GEN PURP 50V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AA, SMB

재고2,832

50V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

150°C (Max)

SE10PBHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

재고5,680

100V

1A

1.05V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

5µA @ 100V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

CDBMTS2200-HF

Comchip Technology

DIODE SCHOTTKY 200V 2A SOD123S

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123S
Supplier Device Package: SOD-123S
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123S

재고2,384

200V

2A (DC)

920mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 200V

160pF @ 4V, 1MHz

Surface Mount

SOD-123S

-55°C ~ 150°C

ES1JL MHG

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,136

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

8pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

F1T1G A0G

TSC America Inc.

DIODE, FAST, 1A, 50V, 150NS, TS-

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고6,896

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SS15L RQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고5,136

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 50V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

BAV21WS-E3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

재고5,296

200V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

1.5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

TST30U45C C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 30A, 45

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고7,968

45V

15A

540mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 45V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

RBR2LAM60ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고9,051

60 V

2A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

75 µA @ 60 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

HS1D

Surge

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

S2025

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

JANS1N6873UTK2AS-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

NDSH10120C-F155

onsemi

SIC DIODE GEN2.0 1200V TO247-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
Capacitance @ Vr, F: 680pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1200 V

12A

1.75 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1.2 kV

680pF @ 1V, 100kHz

Through Hole

TO-247-2

-55°C ~ 175°C

HSM221C-JTR-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SB1030_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 30V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

30 V

10A

550 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 30 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 125°C

AS3BD-M3-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 3A DO214AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

200 V

3A

1.05 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

S40A10

Microchip Technology

DIODE GEN PURP 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

40A

1.1 V @ 40 A

Standard Recovery >500ns, > 200mA (Io)

3 µs

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-

RB520S-30GDTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

NTE579

NTE Electronics, Inc

DIODE SCHOTTKY 90V 3A DO27

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

90 V

3A

790 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

600 µA @ 90 V

-

Through Hole

DO-201AA, DO-27, Axial

DO-27

-65°C ~ 150°C

ES5D-T-M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 185pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

5A

950 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

185pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C