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SS2H9HE3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 2A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

20BQ030

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

VS-SD2500C12K

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 3000A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 3000A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 4000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

패키지: DO-200AC, K-PUK

APT60D120SG

Microsemi Corporation

DIODE GEN PURP 1.2KV 60A D3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3 [S]
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

1N3957

Semtech Corporation

MIL, QPL PART, 1A, 1000V STANDAR

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

STTH20R04D

STMicroelectronics

DIODE GEN PURP 400V 20A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Current - Reverse Leakage @ Vr: 20µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

SK33BHR5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AA, SMB

SB380EA-G

Comchip Technology

DIODE SCHOTTKY 80V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 80V
• Capacitance @ Vr, F: 250pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

GL34DHE3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AA (Glass)

RMPG06DHE3_A/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: MPG06, Axial

SS12LHRQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-219AB

CDBU40-HF

Comchip Technology

DIODE SCHOTTKY 40V 200MA 0603

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: 0603/SOD-523F
• Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, No Lead

VS-40HFR100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 40A DO203AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

CDBC360-HF

Comchip Technology

DIODE SCHOTTKY 60V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: 250pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-214AB, SMC

RB162M-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

NRVTSA4100ET3G

ON Semiconductor

DIODE REC SCHOTTKY 100V 4A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 680mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9µA @ 100V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

SBAS16LT1G

ON Semiconductor

DIODE GEN PURP 75V 200MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

MBRM120ET1G

ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-216AA

P2500MH

Taiwan Semiconductor Corporation

25A, 1000V, STANDARD RECOVERY RE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

MUR560M_AY_00001

Panjit International Inc.

DIODE GEN PURP 600V 5A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

S3460

Microchip Technology

RECTIFIER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 45A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

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S6D06065F

SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 3 µA @ 650 V
• Capacitance @ Vr, F: 559pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC (TO-220-2F)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

SF17GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 500 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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1N5553US-TR

Microchip Technology

STD RECTIFIER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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STPST2H100AFY

STMicroelectronics

AUTOMOTIVE 100 V, 2 A POWER SCHO

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD128Flat
• Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

MBRS360T3H

onsemi

DIODE SCHOTTKY 60V 4A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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CDBA3150LR-HF

Comchip Technology

DIODE SCHOTTKY 150V 3A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 150 V
• Capacitance @ Vr, F: 250pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -50°C ~ 175°C

패키지: -

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MURS860B-BP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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