페이지 1795 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SB10-05A2-AT1
ON Semiconductor

DIODE SCHOTTKY 50V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 1mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: 125°C (Max)
패키지: DO-204AL, DO-41, Axial
재고2,272
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
1N3260R
Powerex Inc.

DIODE GEN PURP 50V 160A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 160A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-205AB, DO-9, Stud
재고3,824
50V
160A
-
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 50V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 175°C
S150JR
GeneSiC Semiconductor

DIODE GEN REV 600V 150A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: DO-205AA, DO-8, Stud
재고3,200
600V
150A
1.2V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
S6D
S6D
GeneSiC Semiconductor

DIODE GEN PURP 200V 6A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-203AA, DO-4, Stud
재고4,352
200V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 175°C
VS-HFA15TB60STRLP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,984
600V
15A (DC)
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
MBR60100PTE3/TU
Microsemi Corporation

DIODE SCHOTTKY 60A 100V TO-247AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고7,184
-
-
-
-
-
-
-
-
-
-
-
SDUR1530
SMC Diode Solutions

DIODE GEN PURP 300V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고3,968
300V
15A
1.26V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 300V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
CD214C-F350
Bourns Inc.

DIODE GEN PURP 50V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고5,552
50V
3A
920mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
hot US1M-M3/61T
Vishay Semiconductor Diodes Division

DIODE 1A 1000V 75NS DO-214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AC, SMA
재고324,000
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SB340TR
SMC Diode Solutions

DIODE SCHOTTKY 40V DO-201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 200pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-201AD, Axial
재고4,448
40V
3A
520mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
200pF @ 5V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SE10FJ-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-219AB
재고5,648
600V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 600V
7.5pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
hot MBRD835LT4G
ON Semiconductor

DIODE SCHOTTKY 35V 8A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.4mA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고1,693,572
35V
8A
510mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.4mA @ 35V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-65°C ~ 150°C
HER105S-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A A-405

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 mA @ 400 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
Request a Quote
400 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 mA @ 400 V
20pF @ 4V, 1MHz
Through Hole
Axial
A-405
-55°C ~ 125°C
SBRFP10U45D1-13
Diodes Incorporated

DIODE GEN PURP 45V 10A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
45 V
10A
500 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
200 µA @ 45 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-55°C ~ 150°C
GS1BHE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
100 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 1000 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
AS1FG-M3-I
Vishay General Semiconductor - Diodes Division

DIODE AVAL 400V 1.5A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
400 V
1.5A
1.15 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
1.3 µs
5 µA @ 400 V
8.8pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
1N67A-BK
Central Semiconductor Corp

DIODE GEN PURP 90V 50MA DO7

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AA, DO-7, Axial
  • Supplier Device Package: DO-7
  • Operating Temperature - Junction: -65°C ~ 75°C
패키지: -
Request a Quote
90 V
50mA
1 V @ 5 mA
Small Signal =< 200mA (Io), Any Speed
-
50 µA @ 50 V
-
Through Hole
DO-204AA, DO-7, Axial
DO-7
-65°C ~ 75°C
MUR420SH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고8,985
200 V
4A
875 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 200 V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
FESB16HTHE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 500V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 500 V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
500 V
16A
1.5 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 500 V
145pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 150°C
BAS21-QVL
Nexperia USA Inc.

DIODE SCHOTT 200V 200MA TO236AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
200 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 200 V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
150°C
RHRP3060-F102
onsemi

DIODE GEN PURP 600V 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
Request a Quote
600 V
30A
2.1 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
250 µA @ 600 V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
SF55G-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
300 V
5A
1.27 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
GP3D030A120B
SemiQ

DIODE SIL CARB 1.2KV 30A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
  • Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
1200 V
30A
1.7 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
1762pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
RS2JWF-HF
Comchip Technology

DIODE GEN PURP 600V 2A SOD123F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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600 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
30pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123F
-55°C ~ 150°C
SB240L-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: 180pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
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40 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
180pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 125°C
IV1D06006O2
Inventchip

DIODE SIL CARB 650V 17.4A TO220

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 17.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 650 V
  • Capacitance @ Vr, F: 212pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고396
650 V
17.4A
1.65 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
212pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
SM4937-TP
Micro Commercial Co

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (HSMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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600 V
1A
-
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 600 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-55°C ~ 150°C
SBRS8140NT3G
onsemi

DIODE SCHOTTKY 40V 1A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: -
재고5,991
40 V
1A
600 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 40 V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 125°C