페이지 1806 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP10GE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고7,472	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N5626GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-201AD, Axial	재고3,584	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 600V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
1N4006GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고6,112	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 800V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SF1602PT C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 85pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-247-3	재고5,072	100V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SFAF2002G C0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고2,560	100V	20A	975mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
EL02ZV0	Sanken	DIODE GEN PURP 200V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고7,568	200V	1.5A	980mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
6A02B-G	Comchip Technology	DIODE GEN PURP 200V 6A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 125°C	패키지: R6, Axial	재고7,136	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	100pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 125°C
EP01CV0	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고5,264	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	5µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
SF36G R0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고6,384	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BYM11-600HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고3,920	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
HER105G B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,296	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR010HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 850mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,008	100V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR009 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 850mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,224	90V	500mA	850mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006T-G	Comchip Technology	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고2,016	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
B170BQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 70V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 70V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고6,592	70V	1A	790mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 70V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
BAT42	STMicroelectronics	DIODE SCHOTTKY 30V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AH, DO-35, Axial	재고93,240	30V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
SBR10U45SP5-13	Diodes Incorporated	DIODE SBR 45V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: PowerDI? 5	재고4,602,012	45V	10A	470mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
SF14-AP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	40pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
NSVRB751S40T5G	onsemi	DIODE SCHOTTKY 30V 30MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 30 V Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	30 V	30mA	370 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 30 V	2.5pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 125°C
VS-8TQ100-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 8A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550 µA @ 100 V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고134,913	100 V	8A	880 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	550 µA @ 100 V	500pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
ER2BF_R1_00001	Panjit International Inc.	DIODE GEN PURP 100V 2A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,200	100 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
SK56L_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고16,740	60 V	5A	500 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
RB088LAM150TR	Rohm Semiconductor	DIODE SCHOTTKY 150V 5A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C	패키지: -	재고31,023	150 V	5A	900 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 150 V	-	Surface Mount	SOD-128	PMDTM	150°C
FR607GP-AP	Micro Commercial Co	DIODE GEN PURP 1KV 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	10 µA @ 1000 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
BYM07-150HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GP 150V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
1N3913A	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 15 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	400 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	15 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
BAV20W-HE3_A-08	Vishay	SWITCHING DIODE GENPURP SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 150 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	150 V	300mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 150 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
PDS5100-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	100 V	5A	790 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 100 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 150°C

GP10GE-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고7,472

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 400V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

1N5626GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-201AD, Axial

재고3,584

600V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 600V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

1N4006GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고6,112

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 800V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SF1602PT C0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 100V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-247-3

재고5,072

100V

16A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

85pF @ 4V, 1MHz

Through Hole

TO-247-3

TO-247AD (TO-3P)

-55°C ~ 150°C

SFAF2002G C0G

TSC America Inc.

DIODE, SUPER FAST, 20A, 100V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고2,560

100V

20A

975mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

170pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

EL02ZV0

Sanken

DIODE GEN PURP 200V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고7,568

200V

1.5A

980mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

50µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

6A02B-G

Comchip Technology

DIODE GEN PURP 200V 6A R6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 125°C

패키지: R6, Axial

재고7,136

200V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

100pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-55°C ~ 125°C

EP01CV0

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고5,264

1000V

200mA

4V @ 200mA

Small Signal =< 200mA (Io), Any Speed

200ns

5µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

SF36G R0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고6,384

400V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BYM11-600HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고3,920

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

HER105G B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,296

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SR010HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 850mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,008

100V

500mA

850mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

65pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SR009 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 850mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,224

90V

500mA

850mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

65pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N4006T-G

Comchip Technology

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고2,016

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

B170BQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 70V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 70V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고6,592

70V

1A

790mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 70V

80pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 150°C

BAT42

STMicroelectronics

DIODE SCHOTTKY 30V 200MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AH, DO-35, Axial

재고93,240

30V

200mA (DC)

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

SBR10U45SP5-13

Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: PowerDI? 5

재고4,602,012

45V

10A

470mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 45V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

SF14-AP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

200 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

40pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

NSVRB751S40T5G

onsemi

DIODE SCHOTTKY 30V 30MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

30 V

30mA

370 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 30 V

2.5pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 125°C

VS-8TQ100-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 8A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고134,913

100 V

8A

880 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

550 µA @ 100 V

500pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

ER2BF_R1_00001

Panjit International Inc.

DIODE GEN PURP 100V 2A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고4,200

100 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 100 V

30pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

SK56L_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고16,740

60 V

5A

500 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

RB088LAM150TR

Rohm Semiconductor

DIODE SCHOTTKY 150V 5A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C

패키지: -

재고31,023

150 V

5A

900 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

3 µA @ 150 V

-

Surface Mount

SOD-128

PMDTM

150°C

FR607GP-AP

Micro Commercial Co

DIODE GEN PURP 1KV 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

10 µA @ 1000 V

150pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

BYM07-150HE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GP 150V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

500mA

1.25 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 150 V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

1N3913A

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

400 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

15 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

BAV20W-HE3_A-08

Vishay

SWITCHING DIODE GENPURP SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

150 V

300mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 150 V

1.5pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C

PDS5100-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C

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100 V

5A

790 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

15 µA @ 100 V

-

Surface Mount

PowerDI™ 5

-65°C ~ 150°C