페이지 1827 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS34HE3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고600,000	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
MPG06JHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	패키지: MPG06, Axial	재고2,880	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
EGP20DHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고7,264	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 150°C
FFPF15U120STU	Fairchild/ON Semiconductor	DIODE GEN PURP 1.2KV 15A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 15µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack	재고2,000	1200V	15A	3.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 1200V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
SB520-E3/51	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고7,488	20V	5A	480mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
STTA2006PIRG	STMicroelectronics	DIODE GEN PURP 600V 20A DOP3I Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DOP3I-2 Insulated (Straight Leads) Supplier Device Package: DOP3I Operating Temperature - Junction: 150°C (Max)	패키지: DOP3I-2 Insulated (Straight Leads)	재고3,216	600V	20A	1.75V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	100µA @ 600V	-	Through Hole	DOP3I-2 Insulated (Straight Leads)	DOP3I	150°C (Max)
VS-30HFUR-200	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 30A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 35µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고6,432	200V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	35µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
RS2AA-13	Diodes Incorporated	DIODE GEN PURP 50V 1.5A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고4,192	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
R7012003XXUA	Powerex Inc.	DIODE GEN PURP 2KV 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 2000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-200AA, A-PUK	재고4,448	2000V	300A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 2000V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
VS-307UR200	Vishay Semiconductor Diodes Division	DIODE GP 2KV 330A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고3,280	2000V	330A	1.46V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
R6012225XXYA	Powerex Inc.	DIODE GEN PURP 2.2KV 250A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-205AB, DO-9, Stud	재고7,648	2200V	250A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 2200V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 175°C
1N4588R	Powerex Inc.	DIODE GEN PURP 200V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9.5mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	패키지: DO-205AA, DO-8, Stud	재고6,816	200V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	9.5mA @ 200V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
PDS5100Q-13D	Diodes Incorporated	DIODE SCHOTTKY 100V 5A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 790mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고3,856	100V	5A	790mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
BYX85TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고4,256	800V	2A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 800V	20pF @ 4V, 1MHz	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SS36LHRUG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고6,320	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
GP10D-4003E-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	패키지: DO-204AL, DO-41, Axial	재고2,100	200V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
MSE1PGHM3/89A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MICROSMP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 175°C	패키지: MicroSMP	재고4,064	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 400V	5pF @ 4V, 1MHz	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 175°C
1N4003G B0G	TSC America Inc.	DIODE, 1A, 200V, DO-204AL (DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고2,128	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
STPS2H100UY	STMicroelectronics	DIODE SCHOTTKY 100V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 175°C	패키지: DO-214AA, SMB	재고150,000	100V	2A	790mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	-	Surface Mount	DO-214AA, SMB	SMB	-40°C ~ 175°C
RB751S-40L2-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 30MA 2TDFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 125°C (Max)	패키지: 0402 (1006 Metric)	재고7,424	40V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	-	Surface Mount	0402 (1006 Metric)	DFN1006-2	125°C (Max)
MA3J142AGL	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA SMINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-85	재고36,000	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 75V	-	Surface Mount	SC-85	SMini3-F2	150°C (Max)
RB068LAM150TR	Rohm Semiconductor	DIODE SCHOTTKY 150V 2A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 810mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: SOD-128	재고29,478	150V	2A	810mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3µA @ 150V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
RS1MB-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SL310B	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 3A, 100V, D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000	100 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	220pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS1MH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고44,700	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
FR1002GP-TP	Micro Commercial Co	DIODE GEN PURP 100V 10A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
V10PM15-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 150 V Capacitance @ Vr, F: 680pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	150 V	10A	1.08 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 150 V	680pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
FR156S-TP	Micro Commercial Co	DIODE GEN PURP 800V 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C

SS34HE3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고600,000

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

MPG06JHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

패키지: MPG06, Axial

재고2,880

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 600V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

EGP20DHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고7,264

200V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

70pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 150°C

FFPF15U120STU

Fairchild/ON Semiconductor

DIODE GEN PURP 1.2KV 15A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 15µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack

재고2,000

1200V

15A

3.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

15µA @ 1200V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

SB520-E3/51

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고7,488

20V

5A

480mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

STTA2006PIRG

STMicroelectronics

DIODE GEN PURP 600V 20A DOP3I

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DOP3I-2 Insulated (Straight Leads)
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)

패키지: DOP3I-2 Insulated (Straight Leads)

재고3,216

600V

20A

1.75V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

100µA @ 600V

-

Through Hole

DOP3I-2 Insulated (Straight Leads)

DOP3I

150°C (Max)

VS-30HFUR-200

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 35µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고6,432

200V

30A

1.45V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

35µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

RS2AA-13

Diodes Incorporated

DIODE GEN PURP 50V 1.5A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고4,192

50V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

R7012003XXUA

Powerex Inc.

DIODE GEN PURP 2KV 300A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 2000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-200AA, A-PUK

재고4,448

2000V

300A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 2000V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 200°C

VS-307UR200

Vishay Semiconductor Diodes Division

DIODE GP 2KV 330A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고3,280

2000V

330A

1.46V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

R6012225XXYA

Powerex Inc.

DIODE GEN PURP 2.2KV 250A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 2200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-205AB, DO-9, Stud

재고7,648

2200V

250A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 2200V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 175°C

1N4588R

Powerex Inc.

DIODE GEN PURP 200V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9.5mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

패키지: DO-205AA, DO-8, Stud

재고6,816

200V

150A

-

Standard Recovery >500ns, > 200mA (Io)

-

9.5mA @ 200V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

PDS5100Q-13D

Diodes Incorporated

DIODE SCHOTTKY 100V 5A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고3,856

100V

5A

790mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 100V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

BYX85TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고4,256

800V

2A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 800V

20pF @ 4V, 1MHz

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SS36LHRUG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고6,320

60V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

GP10D-4003E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

재고2,100

200V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

MSE1PGHM3/89A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MICROSMP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 175°C

패키지: MicroSMP

재고4,064

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

1µA @ 400V

5pF @ 4V, 1MHz

Surface Mount

MicroSMP

-55°C ~ 175°C

1N4003G B0G

TSC America Inc.

DIODE, 1A, 200V, DO-204AL (DO-41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고2,128

200V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

STPS2H100UY

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 175°C

패키지: DO-214AA, SMB

재고150,000

100V

2A

790mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 100V

-

Surface Mount

DO-214AA, SMB

SMB

-40°C ~ 175°C

RB751S-40L2-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 30MA 2TDFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: 125°C (Max)

패키지: 0402 (1006 Metric)

재고7,424

40V

30mA

370mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 30V

-

Surface Mount

0402 (1006 Metric)

DFN1006-2

125°C (Max)

MA3J142AGL

Panasonic Electronic Components

DIODE GEN PURP 80V 100MA SMINI3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-85

재고36,000

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 75V

-

Surface Mount

SC-85

SMini3-F2

150°C (Max)

RB068LAM150TR

Rohm Semiconductor

DIODE SCHOTTKY 150V 2A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-128

재고29,478

150V

2A

810mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

3µA @ 150V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

RS1MB-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

SL310B

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 3A, 100V, D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고9,000

100 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 100 V

220pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RS1MH

Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고44,700

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

FR1002GP-TP

Micro Commercial Co

DIODE GEN PURP 100V 10A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

10A

1.3 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

-

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

V10PM15-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Capacitance @ Vr, F: 680pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

150 V

10A

1.08 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 150 V

680pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

FR156S-TP

Micro Commercial Co

DIODE GEN PURP 800V 1.5A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C