페이지 1841 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10JEHE3/91	Vishay Semiconductor Diodes Division	DIODE SW 1A 600V 250NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,160	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MR851	ON Semiconductor	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-201AA, DO-27, Axial	재고28,560	100V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 100V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
R7S02208XX	Powerex Inc.	DIODE MODULE 2.2KV 800A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	패키지: DO-200AA, A-PUK	재고2,944	2200V	800A	1.8V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	10µs	50mA @ 2200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VS-T70HF100	Vishay Semiconductor Diodes Division	DIODE MODULE 1KV 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고6,208	1000V	70A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1000V	-	Chassis Mount	D-55 T-Module	D-55	-
LSM540JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고2,656	40V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
V20PL60-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5.5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고3,440	60V	5.5A	590mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 60V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
SF15G A0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고5,184	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RSFDLHRFG	TSC America Inc.	DIODE, FAST, 0.5A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고4,160	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
PMEG6010ETR,115	Nexperia USA Inc.	DIODE SCHOTTKY 60V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.4ns Current - Reverse Leakage @ Vr: 60µA @ 60V Capacitance @ Vr, F: 120pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 175°C (Max)	패키지: SOD-123W	재고2,912	60V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	4.4ns	60µA @ 60V	120pF @ 1V, 1MHz	Surface Mount	SOD-123W	CFP3	175°C (Max)
BYS12-90-E3/TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고6,752	90V	1.5A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N4933-T	Diodes Incorporated	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고51,336	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
CMPSH-3E TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 200MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-236-3, SC-59, SOT-23-3	재고55,374	40V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
CD1408-FU1400	Bourns Inc.	DIODE GEN PURP 400V 1A 1408 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 1408 Operating Temperature - Junction: -65°C ~ 175°C	패키지: Chip, Concave Terminals	재고199,494	400V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C
1N4136	Microchip Technology	DIODE GEN PURP 200V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
ES2CAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SBT250-10JS	onsemi	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UFA15M_R2_00001	Panjit International Inc.	DIODE GEN PURP 1KV 1.5A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 10.7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 1000 V	10.7pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
APT10SCE65B	Microsemi Corporation	DIODE SCHOTTKY 650V 10A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
US1004FL_R1_00001	Panjit International Inc.	DIODE GEN PURP 400V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고26,640	400 V	1A	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	9pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
SE20DLJHM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 330 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고12,000	600 V	3.9A	1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	330 ns	5 µA @ 600 V	160pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), Variant	TO-263AC (SMPD)	-55°C ~ 175°C
GP10GE-167E3-93	Vishay General Semiconductor - Diodes Division	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
V5N22-M3-H	Vishay	5A, 200V, DFN3820A TMBS RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.8A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: 285pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	200 V	1.8A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	285pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
GC9704-150A	Microchip Technology	DIODE SCHOTTKY 5V 10MA CHIP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 5 V Current - Average Rectified (Io): 10mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 nA @ 1 V Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	5 V	10mA	600 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 1 V	0.8pF @ 0V, 1MHz	Surface Mount	Die	Chip	-55°C ~ 150°C
JANKCA1N4148	Microchip Technology	DIODE GEN PURP 75V 200MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	75 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
FFSH5065A-F155	onsemi	DIODE SIL CARB 650V 60A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 2530pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고285	650 V	60A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	2530pF @ 1V, 100kHz	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C
V2FM15-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 2A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고22,647	150 V	2A	1.46 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	90pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
PG606R_R2_00001	Panjit International Inc.	DIODE GEN PURP 600V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	600 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	300pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
SRAF5100	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C

RGP10JEHE3/91

Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,160

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MR851

ON Semiconductor

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-201AA, DO-27, Axial

재고28,560

100V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

10µA @ 100V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 125°C

R7S02208XX

Powerex Inc.

DIODE MODULE 2.2KV 800A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 800A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10µs
Current - Reverse Leakage @ Vr: 50mA @ 2200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

패키지: DO-200AA, A-PUK

재고2,944

2200V

800A

1.8V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

10µs

50mA @ 2200V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VS-T70HF100

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 70A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고6,208

1000V

70A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 1000V

-

Chassis Mount

D-55 T-Module

D-55

-

LSM540JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고2,656

40V

5A

520mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 150°C

V20PL60-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고3,440

60V

5.5A

590mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

4mA @ 60V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

SF15G A0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고5,184

300V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

RSFDLHRFG

TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고4,160

200V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

PMEG6010ETR,115

Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4ns
Current - Reverse Leakage @ Vr: 60µA @ 60V
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 175°C (Max)

패키지: SOD-123W

재고2,912

60V

1A

530mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

4.4ns

60µA @ 60V

120pF @ 1V, 1MHz

Surface Mount

SOD-123W

CFP3

175°C (Max)

BYS12-90-E3/TR3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고6,752

90V

1.5A

750mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N4933-T

Diodes Incorporated

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고51,336

50V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 50V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

CMPSH-3E TR

Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

재고55,374

40V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-65°C ~ 150°C

CD1408-FU1400

Bourns Inc.

DIODE GEN PURP 400V 1A 1408

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Chip, Concave Terminals
Supplier Device Package: 1408
Operating Temperature - Junction: -65°C ~ 175°C

패키지: Chip, Concave Terminals

재고199,494

400V

1A

1.05V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

10pF @ 4V, 1MHz

Surface Mount

Chip, Concave Terminals

1408

-65°C ~ 175°C

1N4136

Microchip Technology

DIODE GEN PURP 200V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

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200 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

ES2CAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

150 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 150 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SBT250-10JS

onsemi

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

UFA15M_R2_00001

Panjit International Inc.

DIODE GEN PURP 1KV 1.5A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 10.7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 1000 V

10.7pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

APT10SCE65B

Microsemi Corporation

DIODE SCHOTTKY 650V 10A TO247

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

US1004FL_R1_00001

Panjit International Inc.

DIODE GEN PURP 400V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고26,640

400 V

1A

1.4 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 400 V

9pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

SE20DLJHM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 330 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고12,000

600 V

3.9A

1 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

330 ns

5 µA @ 600 V

160pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), Variant

TO-263AC (SMPD)

-55°C ~ 175°C

GP10GE-167E3-93

Vishay General Semiconductor - Diodes Division

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

V5N22-M3-H

Vishay

5A, 200V, DFN3820A TMBS RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.8A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

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200 V

1.8A

850 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 200 V

285pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 175°C

GC9704-150A

Microchip Technology

DIODE SCHOTTKY 5V 10MA CHIP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 5 V
Current - Average Rectified (Io): 10mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Chip
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

5 V

10mA

600 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

100 nA @ 1 V

0.8pF @ 0V, 1MHz

Surface Mount

Die

Chip

-55°C ~ 150°C

JANKCA1N4148

Microchip Technology

DIODE GEN PURP 75V 200MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

75 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

500 nA @ 75 V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

FFSH5065A-F155

onsemi

DIODE SIL CARB 650V 60A TO247-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고285

650 V

60A

-

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

2530pF @ 1V, 100kHz

Through Hole

TO-247-3

-55°C ~ 175°C

V2FM15-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 2A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고22,647

150 V

2A

1.46 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 150 V

90pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-40°C ~ 175°C

PG606R_R2_00001

Panjit International Inc.

DIODE GEN PURP 600V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

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600 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

1 µA @ 600 V

300pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

SRAF5100

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 5A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

5A

850 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 100 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C