페이지 1861 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SDT05S60	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고3,152	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	170pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SB120-B	Diodes Incorporated	DIODE SCHOTTKY 20V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고3,232	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
HS183100	Microsemi Corporation	DIODE MODULE 100V 180A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 910mV @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 100V Capacitance @ Vr, F: 4800pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	패키지: HALF-PAK	재고3,232	100V	180A	910mV @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 100V	4800pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
SBLF1040HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 125°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고6,960	40V	10A	600mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-40°C ~ 125°C
GI816-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 750ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고6,544	600V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	750ns	10µA @ 600V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
RGP5100HE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -	패키지: Axial	재고4,848	1000V	500mA	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	Axial	Axial	-
1N4937	ON Semiconductor	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고116,928	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
FYV0203SMTF	Fairchild/ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고1,176,000	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	150°C (Max)
R6020435ESYA	Powerex Inc.	DIODE GEN PURP 400V 350A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 350A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	패키지: DO-205AB, DO-9, Stud	재고7,776	400V	350A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
VS-VSKE166/12PBF	Vishay Semiconductor Diodes Division	DIODE GEN 1.2KV 165A INTAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 165A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3) Supplier Device Package: INT-A-PAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: INT-A-PAK (3)	재고7,440	1200V	165A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1200V	-	Chassis Mount	INT-A-PAK (3)	INT-A-PAK	-40°C ~ 150°C
FESF8HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고2,000	500V	8A	1.5V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
CMSH3-20M BK	Central Semiconductor Corp	DIODE SCHOTTKY 20V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 139pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고6,704	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	139pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
RO 2CV	Sanken	DIODE GEN PURP 1KV 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고3,472	1000V	1.2A	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
ESH1B-M3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고7,904	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RGL41J-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고5,088	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
RMPG06B-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	패키지: MPG06, Axial	재고5,392	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	6.6pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
STTH5R06DJF-TR	STMicroelectronics	DIODE GEN PURP 600V 5A POWERFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 60µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: 175°C (Max)	패키지: 8-PowerVDFN	재고8,808	600V	5A	2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	60µA @ 600V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	175°C (Max)
BYM07-200HE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GP 200V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	200 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
SR5010H-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 175°C	패키지: -	Request a Quote	100 V	5A	800 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 100 V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 175°C
GIB1403HE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 150V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	150 V	8A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 150°C
SK24_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 90 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,030	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
SL34PL-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 3A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	3A	450 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
S1G-KR2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
1PS76SB21-QX	Nexperia USA Inc.	1PS76SB21-Q/SOD323/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 30 V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	200mA	550 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	15 µA @ 30 V	40pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
GPAS1005	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,800	600 V	10A	1.1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	50pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
ACDBB340-HF	Comchip Technology	AUTOMOTIVE DIODE SCHOTTKY 40V 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	150pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 125°C
GP3D040A065U	SemiQ	DIODE SIL CARB 650V 40A TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 835pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	40A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	835pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C
STPSC10065GY-TR	STMicroelectronics	DIODE SIL CARBIDE 650V 10A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 130 µA @ 650 V Capacitance @ Vr, F: 670pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고1,878	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C

SDT05S60

Infineon Technologies

DIODE SCHOTTKY 600V 5A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고3,152

600V

5A (DC)

1.7V @ 5A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

170pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SB120-B

Diodes Incorporated

DIODE SCHOTTKY 20V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고3,232

20V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

HS183100

Microsemi Corporation

DIODE MODULE 100V 180A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 180A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 100V
Capacitance @ Vr, F: 4800pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

패키지: HALF-PAK

재고3,232

100V

180A

910mV @ 180A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 100V

4800pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

SBLF1040HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 125°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고6,960

40V

10A

600mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-40°C ~ 125°C

GI816-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 750ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고6,544

600V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

750ns

10µA @ 600V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

RGP5100HE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -

패키지: Axial

재고4,848

1000V

500mA

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

Axial

-

1N4937

ON Semiconductor

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고116,928

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 600V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

FYV0203SMTF

Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고1,176,000

30V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 30V

10pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

150°C (Max)

R6020435ESYA

Powerex Inc.

DIODE GEN PURP 400V 350A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 350A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -45°C ~ 150°C

패키지: DO-205AB, DO-9, Stud

재고7,776

400V

350A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-45°C ~ 150°C

VS-VSKE166/12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 165A INTAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 165A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: INT-A-PAK (3)

재고7,440

1200V

165A

-

Standard Recovery >500ns, > 200mA (Io)

-

20mA @ 1200V

-

Chassis Mount

INT-A-PAK (3)

INT-A-PAK

-40°C ~ 150°C

FESF8HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고2,000

500V

8A

1.5V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 500V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

CMSH3-20M BK

Central Semiconductor Corp

DIODE SCHOTTKY 20V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 139pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고6,704

20V

3A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

139pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

RO 2CV

Sanken

DIODE GEN PURP 1KV 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고3,472

1000V

1.2A

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

ESH1B-M3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고7,904

100V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

RGL41J-E3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고5,088

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

RMPG06B-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

패키지: MPG06, Axial

재고5,392

100V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

6.6pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

STTH5R06DJF-TR

STMicroelectronics

DIODE GEN PURP 600V 5A POWERFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 60µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)
Operating Temperature - Junction: 175°C (Max)

패키지: 8-PowerVDFN

재고8,808

600V

5A

2V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

60µA @ 600V

-

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

175°C (Max)

BYM07-200HE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GP 200V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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200 V

500mA

1.25 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

SR5010H-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 175°C

패키지: -

Request a Quote

100 V

5A

800 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 100 V

200pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 175°C

GIB1403HE3_A-P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

150 V

8A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 150 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 150°C

SK24_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고9,030

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

90 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

SL34PL-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 3A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

3A

450 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

S1G-KR2G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

1 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

1PS76SB21-QX

Nexperia USA Inc.

1PS76SB21-Q/SOD323/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 30 V
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

200mA

550 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

15 µA @ 30 V

40pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

GPAS1005

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 10A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고4,800

600 V

10A

1.1 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

50pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

ACDBB340-HF

Comchip Technology

AUTOMOTIVE DIODE SCHOTTKY 40V 3A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

150pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 125°C

GP3D040A065U

SemiQ

DIODE SIL CARB 650V 40A TO247-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

40A

1.7 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

835pF @ 1V, 1MHz

Through Hole

TO-247-3

-55°C ~ 175°C

STPSC10065GY-TR

STMicroelectronics

DIODE SIL CARBIDE 650V 10A D2PAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고1,878

650 V

10A

1.45 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

130 µA @ 650 V

670pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C