페이지 19 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4002GPEHE3/91	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고6,160	100V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	5µA @ 100V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS10PH10HM3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 270pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고123,600	100V	10A	880mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	270pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SB160-E3/51	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고4,096	60V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
R7003603XXUA	Powerex Inc.	DIODE GEN PURP 3.6KV 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 3600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-200AA, A-PUK	재고2,688	3600V	300A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 3600V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
VS-ETU1506S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,432	600V	15A	1.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	15µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
GPP60GHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	패키지: P600, Axial	재고5,616	400V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	5.5µs	5µA @ 400V	-	Through Hole	P600, Axial	P600	-55°C ~ 175°C
CDBMT220L-G	Comchip Technology	DIODE SCHOTTKY 20V 2A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 380mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 100°C	패키지: SOD-123H	재고6,816	20V	2A (DC)	380mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	160pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 100°C
BYG20JHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고7,136	600V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1F R3G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 300V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고6,272	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1GL MQG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고6,576	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SE20DD-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고7,056	200V	3.9A	1.2V @ 20A	Standard Recovery >500ns, > 200mA (Io)	3µs	25µA @ 200V	150pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
SDURD1060BTR	SMC Diode Solutions	DIODE GEN PURP 600V DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,352	600V	-	2.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
STTH3R06RL	STMicroelectronics	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max)	패키지: DO-201AD, Axial	재고138,450	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	3µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
SJPL-D2VL	Sanken	DIODE GEN PURP 200V 1A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	패키지: 2-SMD, J-Lead	재고28,026	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 200V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
B320A-13-F	Diodes Incorporated	DIODE SCHOTTKY 20V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,090,364	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
CUS10S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	패키지: SC-76, SOD-323	재고272,994	30V	1A	230mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	135pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
S1GHM3-61T	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	1 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
PMEG2015EH-QX	Nexperia USA Inc.	PMEG2015EH-Q/SOD123F/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 20 V Capacitance @ Vr, F: 40pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C	패키지: -	재고9,000	20 V	1.5A	660 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 20 V	40pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C
UG1A-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	1A	920 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 50 V	17pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MUR3065B-BP	Micro Commercial Co	RECTIFIERS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 650 V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 650 V	170pF @ 4V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
GP10-4007E-E3-54	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	패키지: -	Request a Quote	1000 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
NSF03A20	KYOCERA AVX	DIODE GEN PURP 200V 3A NSMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: nSMC Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	980 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 200 V	-	Surface Mount	DO-214AB, SMC	nSMC	-40°C ~ 150°C
SS1H20LS	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고207,096	200 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 200 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
ES3GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000	400 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HER304-TP	Micro Commercial Co	DIODE GEN PURP 300V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	300 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UGF12J	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	600 V	12A	2 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SS16-3HE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	60 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
1N6818R	Microchip Technology	DIODE SCHOTTKY 45V 75A THINKEY3 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7.5 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	45 V	75A	650 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	7.5 mA @ 45 V	-	Surface Mount	ThinKey™3	ThinKey™3	-55°C ~ 150°C

1N4002GPEHE3/91

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고6,160

100V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

5µA @ 100V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SS10PH10HM3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고123,600

100V

10A

880mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 100V

270pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SB160-E3/51

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고4,096

60V

1A

650mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

R7003603XXUA

Powerex Inc.

DIODE GEN PURP 3.6KV 300A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3600V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 3600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-200AA, A-PUK

재고2,688

3600V

300A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 3600V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 200°C

VS-ETU1506S-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,432

600V

15A

1.9V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

15µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

GPP60GHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C

패키지: P600, Axial

재고5,616

400V

6A

1.1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

5.5µs

5µA @ 400V

-

Through Hole

P600, Axial

P600

-55°C ~ 175°C

CDBMT220L-G

Comchip Technology

DIODE SCHOTTKY 20V 2A SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 380mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 100°C

패키지: SOD-123H

재고6,816

20V

2A (DC)

380mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

160pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 100°C

BYG20JHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고7,136

600V

1.5A

1.4V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 600V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

HS1F R3G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 300V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고6,272

300V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

HS1GL MQG

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고6,576

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SE20DD-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고7,056

200V

3.9A

1.2V @ 20A

Standard Recovery >500ns, > 200mA (Io)

3µs

25µA @ 200V

150pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

SDURD1060BTR

SMC Diode Solutions

DIODE GEN PURP 600V DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,352

600V

-

2.5V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

STTH3R06RL

STMicroelectronics

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)

패키지: DO-201AD, Axial

재고138,450

600V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

3µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

175°C (Max)

SJPL-D2VL

Sanken

DIODE GEN PURP 200V 1A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 2-SMD, J-Lead

재고28,026

200V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

25µA @ 200V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,090,364

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

200pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

CUS10S30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

패키지: SC-76, SOD-323

재고272,994

30V

1A

230mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

135pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

S1GHM3-61T

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.8 µs

1 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

PMEG2015EH-QX

Nexperia USA Inc.

PMEG2015EH-Q/SOD123F/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 20 V
Capacitance @ Vr, F: 40pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C

패키지: -

재고9,000

20 V

1.5A

660 mV @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 20 V

40pF @ 1V, 1MHz

Surface Mount

SOD-123F

150°C

UG1A-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

1A

920 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 50 V

17pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MUR3065B-BP

Micro Commercial Co

RECTIFIERS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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650 V

30A

1.8 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 650 V

170pF @ 4V, 1MHz

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

GP10-4007E-E3-54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

패키지: -

Request a Quote

1000 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

NSF03A20

KYOCERA AVX

DIODE GEN PURP 200V 3A NSMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: nSMC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

980 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 200 V

-

Surface Mount

DO-214AB, SMC

nSMC

-40°C ~ 150°C

SS1H20LS

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 1A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고207,096

200 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 µA @ 200 V

-

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

ES3GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고9,000

400 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

HER304-TP

Micro Commercial Co

DIODE GEN PURP 300V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

300 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

UGF12J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

600 V

12A

2 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

5 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SS16-3HE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

60 V

1A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

1N6818R

Microchip Technology

DIODE SCHOTTKY 45V 75A THINKEY3

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7.5 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -55°C ~ 150°C

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45 V

75A

650 mV @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

-

7.5 mA @ 45 V

-

Surface Mount

ThinKey™3

-55°C ~ 150°C