페이지 196 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CN4157 TR	Central Semiconductor Corp	DIODE MULTI CHIP 20V DO-35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.66V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AH, DO-35, Axial	재고3,584	20V	-	2.66V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
SS5P6HM3J/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 5A 60V TO-277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고2,416	60V	5A	690mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
JANTX1N483B	Microsemi Corporation	DIODE GEN PURP 70V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 70V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AH, DO-35, Axial	재고5,072	70V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 70V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
EGP30G-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AA, DO-27, Axial	재고4,608	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
SF1604PT C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 200V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 85pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-247-3	재고3,808	200V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
NSF8DTHE3_A/P	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Insulated, TO-220AC	재고5,984	200V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	55pF @ 4V, 1MHz	Through Hole	TO-220-2 Insulated, TO-220AC	ITO-220AC	-55°C ~ 150°C
GPP60D-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 175°C	패키지: P600, Axial	재고4,416	200V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	5.5µs	5µA @ 200V	-	Through Hole	P600, Axial	P600	-55°C ~ 175°C
VS-8EWS10STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고5,792	-	-	-	-	-	-	-	-	-	-	-
FERD20S100STS	STMicroelectronics	FIELD-EFFECT RECTIFIER DIODE 100 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 780mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-3	재고5,024	100V	20A	780mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	175°C (Max)
ESH3B-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AB, SMC	재고4,064	100V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 100V	70pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 175°C
AR1PGHM3/85A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1A DO220AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-220AA	재고6,224	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 400V	12.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
HER201G R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고3,360	50V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
CDSFR355B	Comchip Technology	DIODE GEN PURP 80V 100MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	패키지: 1005 (2512 Metric)	재고3,872	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
S1J R3G	TSC America Inc.	DIODE, 1A, 600V, DO-214AC (SMA) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고5,776	600V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
SBR15A30SP5-13	Diodes Incorporated	DIODE SBR 30V 15A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: PowerDI? 5	재고4,112	30V	15A	590mV @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
VS-60EPF06-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-2	재고6,528	600V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
BAS716,115	Nexperia USA Inc.	DIODE GEN PURP 75V 200MA SOD523 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고250,740	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
PMEG4010ETR,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.4ns Current - Reverse Leakage @ Vr: 50µA @ 40V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 175°C (Max)	패키지: SOD-123W	재고132,060	40V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	4.4ns	50µA @ 40V	130pF @ 1V, 1MHz	Surface Mount	SOD-123W	CFP3	175°C (Max)
1N3970	Microchip Technology	DIODE GEN PURP 600V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	600 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
JAN1N3595US	Microchip Technology	DIODE GEN PURP 125V 4A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	125 V	4A	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
HSM221CTL	Renesas Electronics Corporation	RECTIFIER DIODE, 0.1A, 85V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HSM123TR-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UJ3D06530TS	Qorvo	DIODE SIL CARB 650V 30A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 370 µA @ 650 V Capacitance @ Vr, F: 990pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고23,331	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	370 µA @ 650 V	990pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SR1010-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	100 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
RB560SS-40T2R	Rohm Semiconductor	DIODE SCHOTTKY 40V 500MA KMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: KMD2 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	500mA	640 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 40 V	-	Surface Mount	0603 (1608 Metric)	KMD2	150°C
CDBWL0130LR-HF	Comchip Technology	DIODE SCHOTTKY 30V 100MA 01005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 460 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 30 V Capacitance @ Vr, F: 28pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 01005 (0402 Metric) Supplier Device Package: 1005 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	30 V	100mA	460 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	20 µA @ 30 V	28pF @ 0V, 1MHz	Surface Mount	01005 (0402 Metric)	1005	-55°C ~ 125°C
SS24-7002E3-5BT	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	2A	550 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HT14G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고15,000	300 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

CN4157 TR

Central Semiconductor Corp

DIODE MULTI CHIP 20V DO-35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.66V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AH, DO-35, Axial

재고3,584

20V

-

2.66V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 20V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

SS5P6HM3J/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 60V TO-277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고2,416

60V

5A

690mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

200pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

JANTX1N483B

Microsemi Corporation

DIODE GEN PURP 70V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25nA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AH, DO-35, Axial

재고5,072

70V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

25nA @ 70V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

EGP30G-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AA, DO-27, Axial

재고4,608

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

-

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

SF1604PT C0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 200V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-247-3

재고3,808

200V

16A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

85pF @ 4V, 1MHz

Through Hole

TO-247-3

TO-247AD (TO-3P)

-55°C ~ 150°C

NSF8DTHE3_A/P

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Insulated, TO-220AC

재고5,984

200V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

55pF @ 4V, 1MHz

Through Hole

TO-220-2 Insulated, TO-220AC

ITO-220AC

-55°C ~ 150°C

GPP60D-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5.5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 175°C

패키지: P600, Axial

재고4,416

200V

6A

1.1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

5.5µs

5µA @ 200V

-

Through Hole

P600, Axial

P600

-55°C ~ 175°C

VS-8EWS10STRR-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고5,792

-

FERD20S100STS

STMicroelectronics

FIELD-EFFECT RECTIFIER DIODE 100

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-3

재고5,024

100V

20A

780mV @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

TO-220-3

TO-220AB

175°C (Max)

ESH3B-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AB, SMC

재고4,064

100V

3A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 100V

70pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 175°C

AR1PGHM3/85A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1A DO220AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

재고6,224

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 400V

12.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

HER201G R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 50V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고3,360

50V

2A

1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

35pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

CDSFR355B

Comchip Technology

DIODE GEN PURP 80V 100MA 1005

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 80V
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

패키지: 1005 (2512 Metric)

재고3,872

80V

100mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 80V

3pF @ 0.5V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

S1J R3G

TSC America Inc.

DIODE, 1A, 600V, DO-214AC (SMA)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고5,776

600V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

1µA @ 600V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

SBR15A30SP5-13

Diodes Incorporated

DIODE SBR 30V 15A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: PowerDI? 5

재고4,112

30V

15A

590mV @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 30V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

VS-60EPF06-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-2

재고6,528

600V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 600V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

BAS716,115

Nexperia USA Inc.

DIODE GEN PURP 75V 200MA SOD523

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고250,740

75V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

3µs

5nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C (Max)

PMEG4010ETR,115

Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.4ns
Current - Reverse Leakage @ Vr: 50µA @ 40V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 175°C (Max)

패키지: SOD-123W

재고132,060

40V

1A

490mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

4.4ns

50µA @ 40V

130pF @ 1V, 1MHz

Surface Mount

SOD-123W

CFP3

175°C (Max)

1N3970

Microchip Technology

DIODE GEN PURP 600V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

600 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 600 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 200°C

JAN1N3595US

Microchip Technology

DIODE GEN PURP 125V 4A B SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

125 V

4A

1 V @ 200 mA

Standard Recovery >500ns, > 200mA (Io)

3 µs

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

HSM221CTL

Renesas Electronics Corporation

RECTIFIER DIODE, 0.1A, 85V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

HSM123TR-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

UJ3D06530TS

Qorvo

DIODE SIL CARB 650V 30A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 370 µA @ 650 V
Capacitance @ Vr, F: 990pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고23,331

650 V

30A

1.7 V @ 30 A

No Recovery Time > 500mA (Io)

0 ns

370 µA @ 650 V

990pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

SR1010-AP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

100 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

RB560SS-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 40V 500MA KMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

500mA

640 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

40 µA @ 40 V

-

Surface Mount

0603 (1608 Metric)

KMD2

150°C

CDBWL0130LR-HF

Comchip Technology

DIODE SCHOTTKY 30V 100MA 01005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 01005 (0402 Metric)
Supplier Device Package: 1005
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

30 V

100mA

460 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

20 µA @ 30 V

28pF @ 0V, 1MHz

Surface Mount

01005 (0402 Metric)

1005

-55°C ~ 125°C

SS24-7002E3-5BT

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

2A

550 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

HT14G

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고15,000

300 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 300 V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C