페이지 222 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
B240A-13-02-F	Diodes Incorporated	DIODE SCHOTTKY 40V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 40V Capacitance @ Vr, F: 200pF @ 40V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고54,000	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500nA @ 40V	200pF @ 40V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
MBRH240200R	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 920mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	패키지: D-67	재고2,688	200V	240A	920mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
MBRB10H35-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,872	35V	10A	850mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
1N5627GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-201AD, Axial	재고2,880	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 800V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
BAW62,133	NXP	DIODE GEN PURP 75V 250MA ALF2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: ALF2 Operating Temperature - Junction: 200°C (Max)	패키지: DO-204AH, DO-35, Axial	재고3,424	75V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	200°C (Max)
A190P	Powerex Inc.	DIODE GEN PURP 1KV 250A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 200°C	패키지: DO-205AB, DO-9, Stud	재고6,112	1000V	250A	1.3V @ 250A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	-	-40°C ~ 200°C
BYWF29-50-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고5,696	50V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 50V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
SURA8110T3G	ON Semiconductor	DIODE GEN PURP 100V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AC, SMA	재고32,664	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 100V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
HS2DA M2G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1.5A, 200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고4,832	200V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MCL103B-TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA MICMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, No Lead	재고4,864	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 20V	-	Surface Mount	2-SMD, No Lead	MicroMELF	125°C (Max)
SS19LHMHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고2,048	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDSV-21-G	Comchip Technology	DIODE GEN PURP 200V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: SC-76, SOD-323	재고7,904	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
SS26-E3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-214AA, SMB	재고3,296	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
RBR1L30ATE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고3,472	30V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
S3JB-TP	Micro Commercial Co	DIODE GEN PURP 600V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -	패키지: DO-214AA, SMB	재고51,624	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-
DB2730800L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.3ns Current - Reverse Leakage @ Vr: 120µA @ 30V Capacitance @ Vr, F: 2.9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SSSMini2-F4-B Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, Flat Lead	재고202,560	30V	100mA	420mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.3ns	120µA @ 30V	2.9pF @ 10V, 1MHz	Surface Mount	2-SMD, Flat Lead	SSSMini2-F4-B	125°C (Max)
SE20PADHM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1.6A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	200 V	1.6A	1.05 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 200 V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
1N2134R	Solid State Inc.	DIODE GEN PURP REV 350V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	350 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 350 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
NTE6159	NTE Electronics, Inc	DIODE GEN PURP 1KV 150A DO8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 190°C	패키지: -	Request a Quote	1000 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	5 mA @ 1000 V	-	Stud Mount	DO-203AA, DO-8, Stud	DO-8	-65°C ~ 190°C
1N5811E3-TR	Microchip Technology	DIODE GEN PURP 150V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	60pF @ 10V, 1MHz	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SK26	SMC Diode Solutions	DIODE SCHOTTKY 60V SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	재고541,329	60 V	-	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 125°C
2A07G_HF-A52	Diodes Incorporated	DIODE GEN PURP 1KV 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
JAN1N6912UTK2AS	Microchip Technology	DIODE SCHOTTKY 45V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V Capacitance @ Vr, F: 1000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	45 V	25A	640 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 45 V	1000pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
1N6677UR-1-TR	Microchip Technology	DIODE SCHOTTKY 40V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote	40 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
RS5D-T-M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 57pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 200 V	57pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N5804E3	Microchip Technology	DIODE GEN PURP 100V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	재고3	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	Through Hole	Axial	A, Axial	-65°C ~ 175°C
PMEG2010EA-QZ	Nexperia USA Inc.	PMEG2010EA-Q/SOD323/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 15 V Capacitance @ Vr, F: 19pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	20 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 15 V	19pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C
BAS40HYT116	Rohm Semiconductor	DIODE SCHOTTKY 40V 120MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C	패키지: -	재고8,925	40 V	120mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C

B240A-13-02-F

Diodes Incorporated

DIODE SCHOTTKY 40V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 40V
Capacitance @ Vr, F: 200pF @ 40V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고54,000

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500nA @ 40V

200pF @ 40V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

MBRH240200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

재고2,688

200V

240A

920mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 200V

-

Chassis Mount

D-67

-55°C ~ 150°C

MBRB10H35-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,872

35V

10A

850mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

1N5627GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-201AD, Axial

재고2,880

800V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 800V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

BAW62,133

NXP

DIODE GEN PURP 75V 250MA ALF2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: ALF2
Operating Temperature - Junction: 200°C (Max)

패키지: DO-204AH, DO-35, Axial

재고3,424

75V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

5µA @ 75V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

ALF2

200°C (Max)

A190P

Powerex Inc.

DIODE GEN PURP 1KV 250A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 200°C

패키지: DO-205AB, DO-9, Stud

재고6,112

1000V

250A

1.3V @ 250A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

-

-40°C ~ 200°C

BYWF29-50-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고5,696

50V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 50V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

SURA8110T3G

ON Semiconductor

DIODE GEN PURP 100V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AC, SMA

재고32,664

100V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

2µA @ 100V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

HS2DA M2G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1.5A, 200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고4,832

200V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MCL103B-TR3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA MICMELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, No Lead

재고4,864

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 20V

-

Surface Mount

2-SMD, No Lead

MicroMELF

125°C (Max)

SS19LHMHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고2,048

90V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 90V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

CDSV-21-G

Comchip Technology

DIODE GEN PURP 200V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SC-76, SOD-323

재고7,904

200V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

SS26-E3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-214AA, SMB

재고3,296

60V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 60V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 125°C

RBR1L30ATE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고3,472

30V

1A

480mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C (Max)

S3JB-TP

Micro Commercial Co

DIODE GEN PURP 600V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -

패키지: DO-214AA, SMB

재고51,624

600V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-

DB2730800L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.3ns
Current - Reverse Leakage @ Vr: 120µA @ 30V
Capacitance @ Vr, F: 2.9pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SSSMini2-F4-B
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, Flat Lead

재고202,560

30V

100mA

420mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.3ns

120µA @ 30V

2.9pF @ 10V, 1MHz

Surface Mount

2-SMD, Flat Lead

SSSMini2-F4-B

125°C (Max)

SE20PADHM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1.6A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

200 V

1.6A

1.05 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 200 V

13pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

1N2134R

Solid State Inc.

DIODE GEN PURP REV 350V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 350 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

350 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 350 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

NTE6159

NTE Electronics, Inc

DIODE GEN PURP 1KV 150A DO8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 190°C

패키지: -

Request a Quote

1000 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

5 mA @ 1000 V

-

Stud Mount

DO-203AA, DO-8, Stud

DO-8

-65°C ~ 190°C

1N5811E3-TR

Microchip Technology

DIODE GEN PURP 150V 3A B AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

3A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

5 µA @ 150 V

60pF @ 10V, 1MHz

Through Hole

B, Axial

-65°C ~ 175°C

SK26

SMC Diode Solutions

DIODE SCHOTTKY 60V SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

재고541,329

60 V

-

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-65°C ~ 125°C

2A07G_HF-A52

Diodes Incorporated

DIODE GEN PURP 1KV 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

JAN1N6912UTK2AS

Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

45 V

25A

640 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 45 V

1000pF @ 5V, 1MHz

Surface Mount

ThinKey™2

-65°C ~ 150°C

1N6677UR-1-TR

Microchip Technology

DIODE SCHOTTKY 40V 200MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

40 V

200mA

500 mV @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 40 V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

RS5D-T-M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 57pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

5A

1.3 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 200 V

57pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

1N5804E3

Microchip Technology

DIODE GEN PURP 100V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

재고3

100 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 100 V

25pF @ 10V, 1MHz

Through Hole

Axial

A, Axial

-65°C ~ 175°C

PMEG2010EA-QZ

Nexperia USA Inc.

PMEG2010EA-Q/SOD323/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C

패키지: -

Request a Quote

20 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 15 V

19pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C

BAS40HYT116

Rohm Semiconductor

DIODE SCHOTTKY 40V 120MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C

패키지: -

재고8,925

40 V

120mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

150°C