페이지 239 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL105-N-2-1-BP	Micro Commercial Co	DIODE GEN PURP 600V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	패키지: Axial, Radial Bend	재고5,568	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
SS1H9HE3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max)	패키지: DO-214AC, SMA	재고3,488	90V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	175°C (Max)
160CMQ035	Vishay Semiconductor Diodes Division	DIODE MODULE 35V 160A TO249AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 160A Voltage - Forward (Vf) (Max) @ If: 860mV @ 160A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 35V Capacitance @ Vr, F: 2600pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: TO-249AA Supplier Device Package: TO-249AA Operating Temperature - Junction: -	패키지: TO-249AA	재고5,920	35V	160A	860mV @ 160A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 35V	2600pF @ 5V, 1MHz	Chassis Mount	TO-249AA	TO-249AA	-
BAS40E6433HTMA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 1µA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-236-3, SC-59, SOT-23-3	재고7,152	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	100ps	1µA @ 30V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	-55°C ~ 150°C
ISOPAC0212	Semtech Corporation	DIODE GEN PURP 600V 15A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2000ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고6,832	600V	15A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2000ns	1µA @ 600V	-	-	-	-	-55°C ~ 175°C
VS-42HF140	Vishay Semiconductor Diodes Division	DIODE 40A BRAZ SQR DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-203AB, DO-5, Stud	재고7,760	1400V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
M3045S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 30A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-3	재고317,880	45V	30A	700mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Through Hole	TO-220-3	TO-220AB	-65°C ~ 150°C
VSB2045-M3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 6.5A P600 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 6.5A Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2mA @ 45V Capacitance @ Vr, F: 2050pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C	패키지: P600, Axial	재고2,320	45V	6.5A	580mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2mA @ 45V	2050pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-40°C ~ 150°C
UF8CT-E3/4W	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고6,976	150V	8A	1.02V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 150V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
AS3PMHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCH 1KV 2.1A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고5,152	1000V	2.1A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.2µs	10µA @ 1000V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
BYG22DHE3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,100	200V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NRVBM140T3G	ON Semiconductor	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-216AA	재고3,520	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
BYG10GHE3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고4,976	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
TST30L45CW C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 30A, 45 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고5,328	45V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
B330LA-E3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고600,000	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SURF1060	SMC Diode Solutions	DIODE SCHOTTKY 600V ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Insulated, TO-220AC	재고16,572	600V	-	2.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	-	Through Hole	TO-220-2 Insulated, TO-220AC	ITO-220AC	-55°C ~ 150°C
SDURF540	SMC Diode Solutions	DIODE GEN PURP 400V ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고23,916	400V	-	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 400V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
1N2156	Solid State Inc.	DIODE GEN PURP 200V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
EU1Z	Sanken Electric USA Inc.	DIODE GEN PURP 200V 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	200 V	500mA	1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	10 µA @ 200 V	-	Through Hole	Axial	-	-40°C ~ 150°C
SD101CW-7-F-79	Diodes Incorporated	DIODE SCHOTTKY 40V 15MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 200 nA @ 30 V Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote	40 V	15mA	900 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 30 V	2.2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
W1032LC500	IXYS	DIODE GEN PURP 5KV 1032A W4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000 V Current - Average Rectified (Io): 1032A Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 2420 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 µs Current - Reverse Leakage @ Vr: 30 mA @ 5000 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: W4 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	5000 V	1032A	2.7 V @ 2420 A	Standard Recovery >500ns, > 200mA (Io)	30 µs	30 mA @ 5000 V	-	Clamp On	DO-200AB, B-PUK	W4	-40°C ~ 150°C
ES3FBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 41pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	300 V	3A	1.13 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 300 V	41pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S10GC	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000	400 V	10A	-	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ZLLS400TC-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 520mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 10 µA @ 30 V Capacitance @ Vr, F: 15pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	520mA	500 mV @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	10 µA @ 30 V	15pF @ 30V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
CDBUR0140L-HF	Comchip Technology	DIODE SCHOTTKY 45V 100MA 0603 SO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603/SOD-523F Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	40 V	100mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	6pF @ 10V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C
S4D10120A	SMC Diode Solutions	DIODE SIL CARB 1.2KV 10A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Capacitance @ Vr, F: 772pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고780	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC (TO-220-2)	-55°C ~ 175°C
1N1185R	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	150 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
BR38_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 80V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 80 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	80 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 80 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 175°C

RL105-N-2-1-BP

Micro Commercial Co

DIODE GEN PURP 600V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial, Radial Bend
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Axial, Radial Bend

재고5,568

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

Axial, Radial Bend

A-405

-55°C ~ 150°C

SS1H9HE3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)

패키지: DO-214AC, SMA

재고3,488

90V

1A

770mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 90V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

175°C (Max)

160CMQ035

Vishay Semiconductor Diodes Division

DIODE MODULE 35V 160A TO249AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 160A
Voltage - Forward (Vf) (Max) @ If: 860mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 35V
Capacitance @ Vr, F: 2600pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249AA
Operating Temperature - Junction: -

패키지: TO-249AA

재고5,920

35V

160A

860mV @ 160A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 35V

2600pF @ 5V, 1MHz

Chassis Mount

TO-249AA

-

BAS40E6433HTMA1

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ps
Current - Reverse Leakage @ Vr: 1µA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

재고7,152

40V

120mA (DC)

1V @ 40mA

Small Signal =< 200mA (Io), Any Speed

100ps

1µA @ 30V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

-55°C ~ 150°C

ISOPAC0212

Semtech Corporation

DIODE GEN PURP 600V 15A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2000ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고6,832

600V

15A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2000ns

1µA @ 600V

-

-55°C ~ 175°C

VS-42HF140

Vishay Semiconductor Diodes Division

DIODE 40A BRAZ SQR DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

재고7,760

1400V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 190°C

M3045S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 30A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-3

재고317,880

45V

30A

700mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Through Hole

TO-220-3

TO-220AB

-65°C ~ 150°C

VSB2045-M3/54

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6.5A P600

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 6.5A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2mA @ 45V
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -40°C ~ 150°C

패키지: P600, Axial

재고2,320

45V

6.5A

580mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.2mA @ 45V

2050pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-40°C ~ 150°C

UF8CT-E3/4W

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고6,976

150V

8A

1.02V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

10µA @ 150V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

AS3PMHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 2.1A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고5,152

1000V

2.1A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.2µs

10µA @ 1000V

37pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

BYG22DHE3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,100

200V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

NRVBM140T3G

ON Semiconductor

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-216AA

재고3,520

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

BYG10GHE3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고4,976

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

TST30L45CW C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 30A, 45

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고5,328

45V

15A

550mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 45V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

B330LA-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고600,000

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

SURF1060

SMC Diode Solutions

DIODE SCHOTTKY 600V ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Insulated, TO-220AC

재고16,572

600V

-

2.2V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 600V

-

Through Hole

TO-220-2 Insulated, TO-220AC

ITO-220AC

-55°C ~ 150°C

SDURF540

SMC Diode Solutions

DIODE GEN PURP 400V ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 30µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고23,916

400V

-

1.3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

30µA @ 400V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

1N2156

Solid State Inc.

DIODE GEN PURP 200V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

EU1Z

Sanken Electric USA Inc.

DIODE GEN PURP 200V 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

200 V

500mA

1 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

400 ns

10 µA @ 200 V

-

Through Hole

Axial

-

-40°C ~ 150°C

SD101CW-7-F-79

Diodes Incorporated

DIODE SCHOTTKY 40V 15MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 15mA
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

40 V

15mA

900 mV @ 15 mA

Small Signal =< 200mA (Io), Any Speed

1 ns

200 nA @ 30 V

2.2pF @ 0V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

W1032LC500

IXYS

DIODE GEN PURP 5KV 1032A W4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5000 V
Current - Average Rectified (Io): 1032A
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 2420 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 µs
Current - Reverse Leakage @ Vr: 30 mA @ 5000 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

5000 V

1032A

2.7 V @ 2420 A

Standard Recovery >500ns, > 200mA (Io)

30 µs

30 mA @ 5000 V

-

Clamp On

DO-200AB, B-PUK

W4

-40°C ~ 150°C

ES3FBH

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 3A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

300 V

3A

1.13 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 300 V

41pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

S10GC

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고9,000

400 V

10A

-

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

ZLLS400TC-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 520mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

520mA

500 mV @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

3 ns

10 µA @ 30 V

15pF @ 30V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

CDBUR0140L-HF

Comchip Technology

DIODE SCHOTTKY 45V 100MA 0603 SO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603/SOD-523F
Operating Temperature - Junction: 125°C

패키지: -

Request a Quote

40 V

100mA

550 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

30 µA @ 10 V

6pF @ 10V, 1MHz

Surface Mount

2-SMD, No Lead

0603/SOD-523F

125°C

S4D10120A

SMC Diode Solutions

DIODE SIL CARB 1.2KV 10A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고780

1200 V

10A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 1200 V

772pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC (TO-220-2)

-55°C ~ 175°C

1N1185R

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

150 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 150 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

BR38_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 80V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

80 V

3A

800 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 80 V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-65°C ~ 175°C