페이지 243 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

기록 52,788
페이지  243/1,886
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10YHM3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1600V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고5,376
1600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1600V
5pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
SS14HE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-214AC, SMA
재고3,664
40V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-65°C ~ 125°C
hot SK34-7
Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AB, SMC
재고1,748,340
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
300pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 150°C
R7222007CSOO
Powerex Inc.

DIODE MODULE 2KV 700A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
패키지: DO-200AB, B-PUK
재고7,280
2000V
700A
1.65V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
5µs
50mA @ 2000V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
A190RM
Powerex Inc.

DIODE GEN REV 600V 250A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 200°C
패키지: DO-205AB, DO-9, Stud
재고7,584
600V
250A
1.3V @ 250A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
-
-40°C ~ 200°C
PFM50A
Semtech Corporation

DIODE GEN PURP 5KV 92MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 5000V
  • Current - Average Rectified (Io): 92mA
  • Voltage - Forward (Vf) (Max) @ If: 12.5V @ 25mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 500nA @ 5000V
  • Capacitance @ Vr, F: 2pF @ 50V, 1KHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
패키지: Axial
재고4,560
5000V
92mA
12.5V @ 25mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 5000V
2pF @ 50V, 1KHz
Through Hole
Axial
Axial
-
NS8GT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2
재고4,944
400V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SJPJ-D3VL
Sanken

DIODE SCHOTTKY SMD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: 2-SMD, J-Lead
재고2,048
30V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
-
Surface Mount
2-SMD, J-Lead
2-SMD
-40°C ~ 150°C
SK315AHM2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AC, SMA
재고6,128
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS24LHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-219AB
재고7,760
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SF15G B0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고6,368
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S2G-E3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고5,120
400V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 400V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
RS1BL MTG
TSC America Inc.

DIODE, FAST, 0.8A, 100V, 150NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-219AB
재고7,984
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
PMEG4010BEV,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOT666

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 50pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
  • Operating Temperature - Junction: 150°C (Max)
패키지: SOT-563, SOT-666
재고6,448
40V
1A (DC)
640mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
50pF @ 1V, 1MHz
Surface Mount
SOT-563, SOT-666
SOT-666
150°C (Max)
hot RS2GA-13-F
Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AC, SMA
재고772,056
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
MMBD4448HT-7
Diodes Incorporated

DIODE GEN PURP 80V 250MA SOT523

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 70V
  • Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: SOT-523
재고140,586
80V
250mA
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 70V
3.5pF @ 6V, 1MHz
Surface Mount
SOT-523
SOT-523
-65°C ~ 150°C
1N5404-G
Comchip Technology

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-27 (DO-201AD)
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고21,816
400V
3A
950mV @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-27 (DO-201AD)
-65°C ~ 125°C
PMEG45U10EPDZ
Nexperia USA Inc.

DIODE SCHOTTKY 45V 10A CFP15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34ns
  • Current - Reverse Leakage @ Vr: 600µA @ 45V
  • Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: CFP15
  • Operating Temperature - Junction: 150°C (Max)
패키지: 3-SMD, Flat Leads
재고31,764
45V
10A
490mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
34ns
600µA @ 45V
1170pF @ 1V, 1MHz
Surface Mount
3-SMD, Flat Leads
CFP15
150°C (Max)
1N4933-TP
Micro Commercial Co

DIODE GEN PURP 50V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
50 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 50 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
40HFR05
Solid State Inc.

DIODE GEN PURP 50V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
50 V
40A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-
SK22HE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 20 V
  • Capacitance @ Vr, F: 230pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
Request a Quote
20 V
2A
500 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 20 V
230pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
JANNTX1N4153UR-1-TR
Microchip Technology

DIODE GP 75V 150MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 50 nA @ 50 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
Request a Quote
75 V
150mA
880 mV @ 20 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
50 nA @ 50 V
2pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
V15P15-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고8,322
150 V
15A
1.08 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 150 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
IV1D12010O2
Inventchip

DIODE SIL CARB 1.2KV 28A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 28A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
  • Capacitance @ Vr, F: 575pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고570
1200 V
28A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
575pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
UF1J-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: -
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600 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
10 µA @ 600 V
17pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-50°C ~ 150°C
ES15JLW
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A SOD123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고80,271
600 V
1.5A
1.7 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 600 V
20pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD-123W
-55°C ~ 150°C
SK34BH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
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40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
BAV16W
SMC Diode Solutions

DIODE GEN PURP 75V 150MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
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75 V
150mA
855 mV @ 10 mA
Small Signal =< 200mA (Io), Any Speed
6 ns
1 µA @ 75 V
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C