페이지 26 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDK12G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2.1mA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,144	650V	12A (DC)	1.8V @ 12A	No Recovery Time > 500mA (Io)	0ns	2.1mA @ 650V	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
R9S02030XX	Powerex Inc.	DIODE RECT 2000V 3935A PUCK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 3935A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 75mA @ 2000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-200 Variation Supplier Device Package: Hockey Puck Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-200 Variation	재고4,560	2000V	3935A	1.1V @ 1500A	Fast Recovery =< 500ns, > 200mA (Io)	25µs	75mA @ 2000V	-	Chassis Mount	TO-200 Variation	Hockey Puck	-40°C ~ 175°C
JAN1N4938-1	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AH, DO-35, Axial	재고3,312	175V	100mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100µA @ 200V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
RS2KHE3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,088	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	17pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
GP08GHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 800MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,560	400V	800mA	1.3V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
FJH1102	Fairchild/ON Semiconductor	DIODE GEN PURP 25V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 25V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100pA @ 25V Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고3,600	25V	150mA (DC)	1.1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	100pA @ 25V	3.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
MA22D1500L	Panasonic Electronic Components	DIODE SCHOTTKY 20V 1A MINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 430mV @ 1mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: 30pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: Mini2-F1 Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고1,586,316	20V	1A	430mV @ 1mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	100µA @ 20V	30pF @ 10V, 1MHz	Surface Mount	SOD-123F	Mini2-F1	150°C (Max)
JAN1N5809US	Microsemi Corporation	DIODE GEN PURP 100V 6A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, B	재고4,432	100V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
GKN26/12	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-203AA, DO-4, Stud	재고2,624	1200V	25A	1.55V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	4mA @ 1200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-40°C ~ 180°C
HER308G B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고6,224	-	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
AU01V0	Sanken	DIODE GEN PURP 400V 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.7V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고5,904	400V	500mA	1.7V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
ESH2C R5G	TSC America Inc.	DIODE, ULTRA FAST, 2A, 150V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AA, SMB	재고6,640	150V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	2µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
GL41KHE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고3,904	800V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
S1DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고3,136	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12 M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AC, SMA	재고5,296	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
RB521S-30LP-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 100MA SOD882 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: SOD-882 Operating Temperature - Junction: 125°C (Max)	패키지: SOD-882	재고4,480	30V	100mA	350mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 10V	-	Surface Mount	SOD-882	SOD-882	125°C (Max)
VS-60APU06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 81ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고15,156	600V	60A	1.68V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	81ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 175°C
EG01V1	Sanken	DIODE GEN PURP 400V 700MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고3,504	400V	700mA	2V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	50µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
CUS521,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 30V Capacitance @ Vr, F: 26pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	패키지: SC-76, SOD-323	재고28,746	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	26pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
JANTXV1N6624-TR	Microchip Technology	DIODE GEN PURP 990V 1A A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 990 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 500 nA @ 990 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	990 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 990 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 150°C
BAV21WS-7-G	Diodes Incorporated	DIODE GEN PURP 200V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
BAS16-QR	Nexperia USA Inc.	BAS16-Q/SOT23/TO-236AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	100 V	215mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 80 V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	150°C
TPM2840-01	DNmicron	SILICON SCHOTTKY DIODE. HAVE GOO Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고48,000	-	-	-	-	-	-	-	-	-	-	-
FFSH2065B-F085	onsemi	DIODE SIL CARB 650V 20A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 866pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고792	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
B5818LWS-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	재고46,650	30 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	120pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 125°C
1N4148_S00Z	onsemi	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	100 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-55°C ~ 175°C
UF101G_R2_00001	Panjit International Inc.	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고14,934	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 100 V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
VS-MBR1045-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	재고26,163	45 V	10A	840 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	600pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C

IDK12G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2.1mA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,144

650V

12A (DC)

1.8V @ 12A

No Recovery Time > 500mA (Io)

0ns

2.1mA @ 650V

360pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

R9S02030XX

Powerex Inc.

DIODE RECT 2000V 3935A PUCK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 3935A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 75mA @ 2000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: TO-200 Variation
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-200 Variation

재고4,560

2000V

3935A

1.1V @ 1500A

Fast Recovery =< 500ns, > 200mA (Io)

25µs

75mA @ 2000V

-

Chassis Mount

TO-200 Variation

Hockey Puck

-40°C ~ 175°C

JAN1N4938-1

Microsemi Corporation

DIODE GEN PURP 175V 100MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 175V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AH, DO-35, Axial

재고3,312

175V

100mA (DC)

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

50ns

100µA @ 200V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

RS2KHE3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,088

800V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

17pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

GP08GHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 800MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,560

400V

800mA

1.3V @ 800mA

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

FJH1102

Fairchild/ON Semiconductor

DIODE GEN PURP 25V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 25V
Current - Average Rectified (Io): 150mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100pA @ 25V
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고3,600

25V

150mA (DC)

1.1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

100pA @ 25V

3.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

MA22D1500L

Panasonic Electronic Components

DIODE SCHOTTKY 20V 1A MINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 430mV @ 1mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: Mini2-F1
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고1,586,316

20V

1A

430mV @ 1mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

100µA @ 20V

30pF @ 10V, 1MHz

Surface Mount

SOD-123F

Mini2-F1

150°C (Max)

JAN1N5809US

Microsemi Corporation

DIODE GEN PURP 100V 6A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, B

재고4,432

100V

6A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 100V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

GKN26/12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 25A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-203AA, DO-4, Stud

재고2,624

1200V

25A

1.55V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

4mA @ 1200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-40°C ~ 180°C

HER308G B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 1000V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고6,224

-

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

35pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

AU01V0

Sanken

DIODE GEN PURP 400V 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고5,904

400V

500mA

1.7V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

ESH2C R5G

TSC America Inc.

DIODE, ULTRA FAST, 2A, 150V, 25N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

재고6,640

150V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

2µA @ 150V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

GL41KHE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고3,904

800V

1A

1.2V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

S1DHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고3,136

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 200V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS12 M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AC, SMA

재고5,296

20V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

RB521S-30LP-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 100MA SOD882

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: SOD-882
Operating Temperature - Junction: 125°C (Max)

패키지: SOD-882

재고4,480

30V

100mA

350mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 10V

-

Surface Mount

SOD-882

125°C (Max)

VS-60APU06PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고15,156

600V

60A

1.68V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

81ns

50µA @ 600V

-

Through Hole

TO-247-3

TO-247AC

-55°C ~ 175°C

EG01V1

Sanken

DIODE GEN PURP 400V 700MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고3,504

400V

700mA

2V @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

50µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

CUS521,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 30V
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

패키지: SC-76, SOD-323

재고28,746

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 30V

26pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

USC

125°C (Max)

JANTXV1N6624-TR

Microchip Technology

DIODE GEN PURP 990V 1A A-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 500 nA @ 990 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

990 V

1A

1.55 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

500 nA @ 990 V

-

Through Hole

A, Axial

-65°C ~ 150°C

BAV21WS-7-G

Diodes Incorporated

DIODE GEN PURP 200V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

200 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

BAS16-QR

Nexperia USA Inc.

BAS16-Q/SOT23/TO-236AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

100 V

215mA

1.25 V @ 150 mA

Fast Recovery =< 500ns, > 200mA (Io)

4 ns

500 nA @ 80 V

1.5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

150°C

TPM2840-01

DNmicron

SILICON SCHOTTKY DIODE. HAVE GOO

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고48,000

-

FFSH2065B-F085

onsemi

DIODE SIL CARB 650V 20A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고792

650 V

20A

1.7 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

866pF @ 1V, 100kHz

Through Hole

TO-247-2

-55°C ~ 175°C

B5818LWS-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

재고46,650

30 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 30 V

120pF @ 4V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 125°C

1N4148_S00Z

onsemi

DIODE GEN PURP 100V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

100 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-55°C ~ 175°C

UF101G_R2_00001

Panjit International Inc.

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고14,934

100 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 100 V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

VS-MBR1045-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

재고26,163

45 V

10A

840 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

600pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C