페이지 280 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS25SHE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 750mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,616	50V	2A	750mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
R6110625XXYZ	Powerex Inc.	DIODE GEN PURP 600V 250A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-205AB, DO-9, Stud	재고7,248	600V	250A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
MBR1635	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2	재고96,180	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
R6031435ESYA	Powerex Inc.	DIODE GEN PURP 1.4KV 350A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 350A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	패키지: DO-205AB, DO-9, Stud	재고5,328	1400V	350A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 1400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
JANTXV1N5809URS	Microsemi Corporation	DIODE GEN PURP 100V 3A BPKG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, B	재고5,808	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
SRA1050HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고6,096	50V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VF20100S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 20A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고13,128	100V	20A	900mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-40°C ~ 150°C
FESE16JT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2	재고6,080	600V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	145pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
MBRS340PT3G	ON Semiconductor	DIODE SCHOTTKY 40V 3A SMC-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AB, SMC	재고7,248	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
PMEG6010CPASX	Nexperia USA Inc.	DIODE SCHOTTKY 60V 1A SOT1061 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 120pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: DFN2020D-3 Operating Temperature - Junction: 150°C (Max)	패키지: 3-SMD, No Lead	재고4,192	60V	1A	540mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	3ns	100µA @ 60V	120pF @ 1V, 1MHz	Surface Mount	3-SMD, No Lead	DFN2020D-3	150°C (Max)
S3D-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GPP 3A 200V DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고2,080	200V	3A	1.15V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
RB520S-30 RKG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-79, SOD-523	재고5,296	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 125°C
SE12DB-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3.2A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고7,584	100V	3.2A	1.15V @ 12A	Standard Recovery >500ns, > 200mA (Io)	3µs	20µA @ 100V	90pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
VS-5EWL06FNTR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고34,266	600V	5A	1.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
BAT54WT-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 200MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-70, SOT-323	재고72,000	30V	200mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 125°C
BY4	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 4 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	4000 V	1A	4 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 4000 V	-	Through Hole	Axial	Axial	-50°C ~ 150°C
R42140	Microchip Technology	DIODE GP REV 1.4KV 125A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	1400 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1400 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
VSSAF522HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 2A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 240pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	200 V	2A	900 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	240pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 175°C
NTE5894	NTE Electronics, Inc	DIODE GEN PURP 100V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	100 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
VSHS15A08-TE16L3	KYOCERA AVX	DIODE SCHOTTKY 80V 15A TO-277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 80 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	80 V	15A	760 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 80 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-40°C ~ 150°C
NRTS10100PFST3G	onsemi	DIODE SCHOTTKY 100V 10A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 760pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고11,487	100 V	10A	780 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	760pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 175°C
ES1GFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
CLL3595-BK	Central Semiconductor Corp	DIODE GEN PURP 150V 150MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: 8pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	150 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	8pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	-65°C ~ 200°C
V20PL63-M3-I	Vishay General Semiconductor - Diodes Division	20A, 60V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 µA @ 60 V Capacitance @ Vr, F: 3400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고19,380	60 V	20A	640 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 60 V	3400pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
JANTX1N3172R	Microchip Technology	DIODE GP 800V 300A DO205AB DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	800 V	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 800 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
SDT2L40CP3-7B	Diodes Incorporated	DIODE SCHOTT 40V 2A X3-DSN1608-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 40 V Capacitance @ Vr, F: 285pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: X3-DSN1608-2 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	2A	520 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 40 V	285pF @ 4V, 1MHz	Surface Mount	0603 (1608 Metric)	X3-DSN1608-2	-55°C ~ 150°C
1N4385-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	10 µs	10 µA @ 600 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 200°C
NRTS12100PFST3G	onsemi	DIODE SCHOTTKY 100V 12A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120 µA @ 100 V Capacitance @ Vr, F: 930pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	100 V	12A	800 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 100 V	930pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 175°C

SS25SHE3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 2A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,616

50V

2A

750mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

R6110625XXYZ

Powerex Inc.

DIODE GEN PURP 600V 250A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 250A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-205AB, DO-9, Stud

재고7,248

600V

250A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 190°C

MBR1635

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2

재고96,180

35V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

R6031435ESYA

Powerex Inc.

DIODE GEN PURP 1.4KV 350A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 350A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -45°C ~ 150°C

패키지: DO-205AB, DO-9, Stud

재고5,328

1400V

350A

1.5V @ 800A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 1400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-45°C ~ 150°C

JANTXV1N5809URS

Microsemi Corporation

DIODE GEN PURP 100V 3A BPKG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, B

재고5,808

100V

3A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 100V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

SRA1050HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고6,096

50V

10A

700mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VF20100S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 20A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고13,128

100V

20A

900mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-40°C ~ 150°C

FESE16JT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 16A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2

재고6,080

600V

16A

1.5V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

145pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

MBRS340PT3G

ON Semiconductor

DIODE SCHOTTKY 40V 3A SMC-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AB, SMC

재고7,248

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

PMEG6010CPASX

Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOT1061

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: DFN2020D-3
Operating Temperature - Junction: 150°C (Max)

패키지: 3-SMD, No Lead

재고4,192

60V

1A

540mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

3ns

100µA @ 60V

120pF @ 1V, 1MHz

Surface Mount

3-SMD, No Lead

DFN2020D-3

150°C (Max)

S3D-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GPP 3A 200V DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고2,080

200V

3A

1.15V @ 2.5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 200V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

RB520S-30 RKG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-79, SOD-523

재고5,296

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

SC-79, SOD-523

SOD-523F

-55°C ~ 125°C

SE12DB-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3.2A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고7,584

100V

3.2A

1.15V @ 12A

Standard Recovery >500ns, > 200mA (Io)

3µs

20µA @ 100V

90pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

VS-5EWL06FNTR-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고34,266

600V

5A

1.2V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

145ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

BAT54WT-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 200MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-70, SOT-323

재고72,000

30V

200mA (DC)

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 25V

10pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

-55°C ~ 125°C

BY4

Diotec Semiconductor

IC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 4 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

4000 V

1A

4 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

1 µA @ 4000 V

-

Through Hole

Axial

-50°C ~ 150°C

R42140

Microchip Technology

DIODE GP REV 1.4KV 125A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

1400 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1400 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

VSSAF522HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 2A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

200 V

2A

900 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

240pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 175°C

NTE5894

NTE Electronics, Inc

DIODE GEN PURP 100V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

100 V

16A

1.23 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 100 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

VSHS15A08-TE16L3

KYOCERA AVX

DIODE SCHOTTKY 80V 15A TO-277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

80 V

15A

760 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 80 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-40°C ~ 150°C

NRTS10100PFST3G

onsemi

DIODE SCHOTTKY 100V 10A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 760pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고11,487

100 V

10A

780 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

760pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 175°C

ES1GFL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

-

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SMA-FL)

-55°C ~ 150°C

CLL3595-BK

Central Semiconductor Corp

DIODE GEN PURP 150V 150MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

150 V

150mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

1 nA @ 125 V

8pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80

-65°C ~ 200°C

V20PL63-M3-I

Vishay General Semiconductor - Diodes Division

20A, 60V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고19,380

60 V

20A

640 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

600 µA @ 60 V

3400pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

JANTX1N3172R

Microchip Technology

DIODE GP 800V 300A DO205AB DO9

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

800 V

300A

1.55 V @ 940 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 800 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

SDT2L40CP3-7B

Diodes Incorporated

DIODE SCHOTT 40V 2A X3-DSN1608-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Capacitance @ Vr, F: 285pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: X3-DSN1608-2
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

2A

520 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 40 V

285pF @ 4V, 1MHz

Surface Mount

0603 (1608 Metric)

X3-DSN1608-2

-55°C ~ 150°C

1N4385-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 µs
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

10 µs

10 µA @ 600 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 200°C

NRTS12100PFST3G

onsemi

DIODE SCHOTTKY 100V 12A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

100 V

12A

800 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

120 µA @ 100 V

930pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 175°C