페이지 293 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R9S02430XX	Powerex Inc.	DIODE RECT 2400V 3935A PUCK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2400V Current - Average Rectified (Io): 3935A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 75mA @ 2400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-200 Variation Supplier Device Package: Hockey Puck Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-200 Variation	재고3,568	2400V	3935A	1.1V @ 1500A	Fast Recovery =< 500ns, > 200mA (Io)	25µs	75mA @ 2400V	-	Chassis Mount	TO-200 Variation	Hockey Puck	-40°C ~ 175°C
STTH4R02D	STMicroelectronics	DIODE GEN PURP 200V 4A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고4,976	200V	4A	1.05V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	3µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
8AF4NPP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 50A B47 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-47 Supplier Device Package: B-47 Operating Temperature - Junction: -65°C ~ 195°C	패키지: B-47	재고4,768	400V	50A	-	Standard Recovery >500ns, > 200mA (Io)	-	5mA @ 400V	-	Chassis, Stud Mount	B-47	B-47	-65°C ~ 195°C
S400KR	GeneSiC Semiconductor	DIODE GEN REV 800V 400A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -60°C ~ 200°C	패키지: DO-205AB, DO-9, Stud	재고5,728	800V	400A	1.2V @ 400A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-60°C ~ 200°C
VS-1N3671A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-203AA, DO-4, Stud	재고6,416	800V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	800µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
SS2P5HM3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고4,848	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
S1GL MTG	TSC America Inc.	DIODE, 1A, 400V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고4,416	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
RB520S-30 RSG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-79, SOD-523	재고3,632	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 125°C
VS-240UR80D	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 320A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 750A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고4,000	800V	320A	1.33V @ 750A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 800V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
EGP30K	Fairchild/ON Semiconductor	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고5,600	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	75pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
PMEG3010EB,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 30pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고53,418	30V	1A (DC)	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	30pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
PMEG3050BEP,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 5A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 30V Capacitance @ Vr, F: 800pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: CFP5 Operating Temperature - Junction: 150°C (Max)	패키지: SOD-128	재고21,918	30V	5A	450mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 30V	800pF @ 1V, 1MHz	Surface Mount	SOD-128	CFP5	150°C (Max)
FFSD1065B	onsemi	DIODE SIL CARB 650V 13.5A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 13.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 424pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고12,522	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C
CS2M-E3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	2A	1.2 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2.1 µs	5 µA @ 1000 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RHRP890	Harris Corporation	DIODE AVALANCHE 900V 8A TO220AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 900 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Current - Reverse Leakage @ Vr: 100 µA @ 900 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	900 V	8A	3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	100 µA @ 900 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
E2400EC45E	IXYS	DIODE GEN PURP 4.5KV 2490A W111 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 2490A Voltage - Forward (Vf) (Max) @ If: 3.65 V @ 2400 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.22 µs Current - Reverse Leakage @ Vr: 100 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: W111 Operating Temperature - Junction: -40°C ~ 140°C	패키지: -	Request a Quote	4500 V	2490A	3.65 V @ 2400 A	Standard Recovery >500ns, > 200mA (Io)	1.22 µs	100 mA @ 4500 V	-	Chassis Mount	DO-200AE	W111	-40°C ~ 140°C
LSIC2SD120A15	Littelfuse Inc.	DIODE SIL CARB 1.2KV 44A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 44A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 920pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1200 V	44A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	920pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SS1040HE_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 40 V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고10,764	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 40 V	155pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SDS065J004D3-ISARH	Luminus Devices Inc.	DIODE 650V-4A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 12 µA @ 650 V Capacitance @ Vr, F: 213pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	14A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	12 µA @ 650 V	213pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2L	-55°C ~ 175°C
PCFFS2065AF	onsemi	DIODE SIL CARBIDE 650V 20A DIE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 175°C (Max)	패키지: -	Request a Quote	650 V	20A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	-	Surface Mount	Die	Die	175°C (Max)
DSC06065D1	Diodes Incorporated	DIODE SIL CARBIDE 650V 6A TO252 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 226pF @ 100mV, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	226pF @ 100mV, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (Type WX)	-55°C ~ 175°C
SF14G-AP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N3903R	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 63 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	400 V	20A	1.4 V @ 63 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	50 µA @ 400 V	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
1N3912R	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 15 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	300 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 300 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
R38100	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
6A20G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	60pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
US2DFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	200 V	2A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	28pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-50°C ~ 150°C
USD535	Microchip Technology	DIODE SCHOTTKY 35V 75A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 35 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: 175°C (Max)	패키지: -	Request a Quote	35 V	75A	680 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 35 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	175°C (Max)

R9S02430XX

Powerex Inc.

DIODE RECT 2400V 3935A PUCK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2400V
Current - Average Rectified (Io): 3935A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 75mA @ 2400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: TO-200 Variation
Supplier Device Package: Hockey Puck
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-200 Variation

재고3,568

2400V

3935A

1.1V @ 1500A

Fast Recovery =< 500ns, > 200mA (Io)

25µs

75mA @ 2400V

-

Chassis Mount

TO-200 Variation

Hockey Puck

-40°C ~ 175°C

STTH4R02D

STMicroelectronics

DIODE GEN PURP 200V 4A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고4,976

200V

4A

1.05V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

3µA @ 200V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

8AF4NPP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 50A B47

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-47
Supplier Device Package: B-47
Operating Temperature - Junction: -65°C ~ 195°C

패키지: B-47

재고4,768

400V

50A

-

Standard Recovery >500ns, > 200mA (Io)

-

5mA @ 400V

-

Chassis, Stud Mount

B-47

-65°C ~ 195°C

S400KR

GeneSiC Semiconductor

DIODE GEN REV 800V 400A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 400A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -60°C ~ 200°C

패키지: DO-205AB, DO-9, Stud

재고5,728

800V

400A

1.2V @ 400A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-60°C ~ 200°C

VS-1N3671A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AA, DO-4, Stud

재고6,416

800V

12A

1.35V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

800µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 200°C

SS2P5HM3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고4,848

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

80pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

S1GL MTG

TSC America Inc.

DIODE, 1A, 400V, SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고4,416

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 400V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

RB520S-30 RSG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-79, SOD-523

재고3,632

30V

200mA

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

SC-79, SOD-523

SOD-523F

-55°C ~ 125°C

VS-240UR80D

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 320A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 320A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 750A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고4,000

800V

320A

1.33V @ 750A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 800V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

EGP30K

Fairchild/ON Semiconductor

DIODE GEN PURP 800V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고5,600

800V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

75pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

PMEG3010EB,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고53,418

30V

1A (DC)

680mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

30pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C (Max)

PMEG3050BEP,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 5A SOD128

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 30V
Capacitance @ Vr, F: 800pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: CFP5
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-128

재고21,918

30V

5A

450mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 30V

800pF @ 1V, 1MHz

Surface Mount

SOD-128

CFP5

150°C (Max)

FFSD1065B

onsemi

DIODE SIL CARB 650V 13.5A DPAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 13.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 424pF @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고12,522

650 V

13.5A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

424pF @ 1V, 100kHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 175°C

CS2M-E3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.1 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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1000 V

2A

1.2 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

2.1 µs

5 µA @ 1000 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RHRP890

Harris Corporation

DIODE AVALANCHE 900V 8A TO220AC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 900 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Current - Reverse Leakage @ Vr: 100 µA @ 900 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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900 V

8A

3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

65 ns

100 µA @ 900 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

E2400EC45E

IXYS

DIODE GEN PURP 4.5KV 2490A W111

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 2490A
Voltage - Forward (Vf) (Max) @ If: 3.65 V @ 2400 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.22 µs
Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: W111
Operating Temperature - Junction: -40°C ~ 140°C

패키지: -

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4500 V

2490A

3.65 V @ 2400 A

Standard Recovery >500ns, > 200mA (Io)

1.22 µs

100 mA @ 4500 V

-

Chassis Mount

DO-200AE

W111

-40°C ~ 140°C

LSIC2SD120A15

Littelfuse Inc.

DIODE SIL CARB 1.2KV 44A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 44A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: 920pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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1200 V

44A

1.8 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 1200 V

920pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SS1040HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 1A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 40 V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고10,764

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 40 V

155pF @ 0V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

SDS065J004D3-ISARH

Luminus Devices Inc.

DIODE 650V-4A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 14A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 12 µA @ 650 V
Capacitance @ Vr, F: 213pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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650 V

14A

1.5 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

12 µA @ 650 V

213pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252-2L

-55°C ~ 175°C

PCFFS2065AF

onsemi

DIODE SIL CARBIDE 650V 20A DIE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)

패키지: -

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650 V

20A

1.75 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

-

Surface Mount

Die

175°C (Max)

DSC06065D1

Diodes Incorporated

DIODE SIL CARBIDE 650V 6A TO252

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 226pF @ 100mV, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

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650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

226pF @ 100mV, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (Type WX)

-55°C ~ 175°C

SF14G-AP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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200 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

1N3903R

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 63 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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400 V

20A

1.4 V @ 63 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

50 µA @ 400 V

150pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

1N3912R

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 15 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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300 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

15 µA @ 300 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

R38100

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

6A20G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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200 V

6A

1 V @ 6 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

60pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

US2DFL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

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200 V

2A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

28pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SMA-FL)

-50°C ~ 150°C

USD535

Microchip Technology

DIODE SCHOTTKY 35V 75A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 35 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)

패키지: -

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35 V

75A

680 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 mA @ 35 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

175°C (Max)