다이오드 - 정류기 - 단일

BAS16J/ZLF

Nexperia USA Inc.

DIODE SWITCHING SOD323F

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

MBRH24045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: D-67

SBLF10L30HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

RGP15DHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

60HFU-400

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 50µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

SM25

Semtech Corporation

DIODE GEN PURP 2.5KV 600MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2500V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 1µA @ 2500V
• Capacitance @ Vr, F: 8pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: Axial

VS-72HF140

Vishay Semiconductor Diodes Division

DIODE STD REC ISO LEAD 70A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

VS-ETH1506STRL-M3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 15A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

UG58G B0G

TSC America Inc.

DIODE, ULTRA FAST, 5A, 600V, 20N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

RH 1CV

Sanken

DIODE GEN PURP 1KV 600MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 600mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

S1FLG-GS18

Vishay Semiconductor Diodes Division

DIODE SW 400V DO-219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

1N5819 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

HER308G A0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 1000V

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 35pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

1N4007G A0G

TSC America Inc.

DIODE, 1A, 1000V, DO-204AL (DO-4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

VSSC8L45-M3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4.9A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 4.9A
• Voltage - Forward (Vf) (Max) @ If: 420mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.85mA @ 45V
• Capacitance @ Vr, F: 1216pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-214AB, SMC

STPS1L40A

STMicroelectronics

DIODE SCHOTTKY 40V 1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA (DO-214AC)
• Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

STPS5H100B-TR

STMicroelectronics

DIODE SCHOTTKY 100V 5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 730mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3.5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Operating Temperature - Junction: 175°C (Max)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

RB521M5

SMC Diode Solutions

30V, 0.1A, SOD-523, DIODES

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 400 mV @ 20 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

S3JFS

Taiwan Semiconductor Corporation

3A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 14pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

1N5417-1-TR

Microchip Technology

DIODE GEN PURP REV 200V 3A B

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: B
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

JANTX1N3612-TR

Microchip Technology

DIODE GEN PURP 400V 1A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

PNE20040EPE-QZ

Nexperia USA Inc.

DIODE GEN PURP 200V 4A CFP15B

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 61pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

패키지: -

TUAS3MH

Taiwan Semiconductor Corporation

3A, 1000V, STANDARD RECOVERY REC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 24pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC4.6U)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

S1JALH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

S3W-HF

Comchip Technology

DIODE GEN PURP 1.6KV 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

V15PM63-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 4.6A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 4.6A
• Voltage - Forward (Vf) (Max) @ If: 660 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35 µA @ 60 V
• Capacitance @ Vr, F: 2700pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

AS1FK-M3-H

Vishay General Semiconductor - Diodes Division

DIODE AVAL 800V 1.5A DO219AB

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.3 µs
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

FR152S-AP

Micro Commercial Co

DIODE GEN PURP 100V 1.5A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote