페이지 328 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N5554US	Microsemi Corporation	DIODE GEN PURP 1KV 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, B	재고4,192	1000V	3A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
SR1504HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 15A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -50°C ~ 150°C	패키지: R6, Axial	재고4,416	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SGL41-50HE3/96	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-213AB, MELF	재고3,808	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 150°C
SK39BHR5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고7,792	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
1N6483HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고7,312	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
US1GHM2G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고6,320	400V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N5400T-G	Comchip Technology	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-27 (DO-201AD) Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-201AD, Axial	재고3,792	50V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-27 (DO-201AD)	-65°C ~ 125°C
1N4005G	SMC Diode Solutions	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고48,000	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
STPS2200UF	STMicroelectronics	DIODE SCHOTTKY 200V 2A SMBFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBflat Operating Temperature - Junction: -40°C ~ 175°C	패키지: DO-221AA, SMB Flat Leads	재고3,296	200V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 200V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBflat	-40°C ~ 175°C
PMEG4002AESFYL	Nexperia USA Inc.	DIODE SCHOTTKY 40V 0.2A SOD962 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 525mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.25ns Current - Reverse Leakage @ Vr: 80µA @ 40V Capacitance @ Vr, F: 18pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C (Max)	패키지: 0201 (0603 Metric)	재고152,904	40V	200mA	525mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	1.25ns	80µA @ 40V	18pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	DSN0603-2	150°C (Max)
C3D04065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 4A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 60µA @ 650V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고28,038	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	251pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
MRS1504T3G	ON Semiconductor	DIODE GEN PURP 400V 1.5A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.04V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고480,000	400V	1.5A	1.04V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
VS-60EPU04PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고6,516	400V	60A	1.25V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	50µA @ 400V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 175°C
1N5820	Fairchild/ON Semiconductor	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 190pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-201AD, Axial	재고24,624	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	190pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 125°C
DSEI20-12A	IXYS	DIODE GEN PURP 1.2KV 17A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 17A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 750µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2	재고14,460	1200V	17A	2.15V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	750µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
1N2242	Microchip Technology	DIODE GEN PURP 1KV 5A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	1000 V	5A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
MBR0520LT1H	onsemi	DIODE SCHOTTKY 20V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	패키지: -	Request a Quote	20 V	500mA	385 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 20 V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
JANTXV1N5620US	Microchip Technology	DIODE GEN PURP 800V 1A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 200°C
ACDBMS140-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -50°C ~ 125°C	패키지: -	Request a Quote	40 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	60pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-50°C ~ 125°C
BAT54QC-QZ	Nexperia USA Inc.	DIODE SCHOT 30V 200MA DFN1412D-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3 Operating Temperature - Junction: 150°C	패키지: -	재고15,000	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3	150°C
TUAR4KH	Taiwan Semiconductor Corporation	500NS, 4A, 800V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	800 V	4A	1.4 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	24pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 150°C
CDBVRL140-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A WBFBP-02L Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: 50pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: WBFBP-02L Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	40 V	1A	550 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	50 µA @ 40 V	50pF @ 1V, 1MHz	Surface Mount	0603 (1608 Metric)	WBFBP-02L	125°C
NRVBA130LT3G-VF01	onsemi	DIODE SCHOTTKY 30V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	30 V	1A	410 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 125°C
WND08P16XQ	WeEn Semiconductors	DIODE GEN PURP 1.6KV 8A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	1600 V	8A	1.2 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	150°C
ND89N16KHPSA1	Infineon Technologies	DIODE GEN PURP 1.6KV 89A PB20-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 89A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB20-1 Operating Temperature - Junction: -40°C ~ 135°C	패키지: -	재고33	1600 V	89A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-	Chassis Mount	Module	BG-PB20-1	-40°C ~ 135°C
VSQS15A045-TE16L3	KYOCERA AVX	DIODE SCHOTTKY 45V 15A TO-277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	45 V	15A	540 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277	-40°C ~ 150°C
V12PM63HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 4.6A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.6A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 60 V Capacitance @ Vr, F: 2400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고13,470	60 V	4.6A	650 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 60 V	2400pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
SS10150HE_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 150V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 150 V Capacitance @ Vr, F: 85pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고27,054	150 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 150 V	85pF @ 0V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C

JANTXV1N5554US

Microsemi Corporation

DIODE GEN PURP 1KV 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, B

재고4,192

1000V

3A

1.3V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 1000V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

SR1504HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 15A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -50°C ~ 150°C

패키지: R6, Axial

재고4,416

40V

15A

550mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

R6, Axial

R-6

-50°C ~ 150°C

SGL41-50HE3/96

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-213AB, MELF

재고3,808

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

80pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 150°C

SK39BHR5G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고7,792

90V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

1N6483HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고7,312

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

US1GHM2G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고6,320

400V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N5400T-G

Comchip Technology

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-27 (DO-201AD)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-201AD, Axial

재고3,792

50V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

-

Through Hole

DO-201AD, Axial

DO-27 (DO-201AD)

-65°C ~ 125°C

1N4005G

SMC Diode Solutions

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고48,000

600V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

STPS2200UF

STMicroelectronics

DIODE SCHOTTKY 200V 2A SMBFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C

패키지: DO-221AA, SMB Flat Leads

재고3,296

200V

2A

800mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 200V

-

Surface Mount

DO-221AA, SMB Flat Leads

SMBflat

-40°C ~ 175°C

PMEG4002AESFYL

Nexperia USA Inc.

DIODE SCHOTTKY 40V 0.2A SOD962

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 525mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.25ns
Current - Reverse Leakage @ Vr: 80µA @ 40V
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C (Max)

패키지: 0201 (0603 Metric)

재고152,904

40V

200mA

525mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

1.25ns

80µA @ 40V

18pF @ 1V, 1MHz

Surface Mount

0201 (0603 Metric)

DSN0603-2

150°C (Max)

C3D04065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 60µA @ 650V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고28,038

650V

4A (DC)

1.8V @ 4A

No Recovery Time > 500mA (Io)

0ns

60µA @ 650V

251pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252-2

-55°C ~ 175°C

MRS1504T3G

ON Semiconductor

DIODE GEN PURP 400V 1.5A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.04V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고480,000

400V

1.5A

1.04V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 400V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

VS-60EPU04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고6,516

400V

60A

1.25V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

50µA @ 400V

-

Through Hole

TO-247-2

TO-247AC Modified

-55°C ~ 175°C

1N5820

Fairchild/ON Semiconductor

DIODE SCHOTTKY 20V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-201AD, Axial

재고24,624

20V

3A

475mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

190pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 125°C

DSEI20-12A

IXYS

DIODE GEN PURP 1.2KV 17A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 17A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 750µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2

재고14,460

1200V

17A

2.15V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

750µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

-40°C ~ 150°C

1N2242

Microchip Technology

DIODE GEN PURP 1KV 5A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

1000 V

5A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

MBR0520LT1H

onsemi

DIODE SCHOTTKY 20V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

20 V

500mA

385 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 20 V

-

Surface Mount

SOD-123

-65°C ~ 125°C

JANTXV1N5620US

Microchip Technology

DIODE GEN PURP 800V 1A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

800 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 200°C

ACDBMS140-HF

Comchip Technology

DIODE SCHOTTKY 40V 1A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -50°C ~ 125°C

패키지: -

Request a Quote

40 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

60pF @ 4V, 1MHz

Surface Mount

SOD-123F

-50°C ~ 125°C

BAT54QC-QZ

Nexperia USA Inc.

DIODE SCHOT 30V 200MA DFN1412D-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3
Operating Temperature - Junction: 150°C

패키지: -

재고15,000

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

150°C

TUAR4KH

Taiwan Semiconductor Corporation

500NS, 4A, 800V, FAST RECOVERY R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 24pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

800 V

4A

1.4 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

24pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 150°C

CDBVRL140-HF

Comchip Technology

DIODE SCHOTTKY 40V 1A WBFBP-02L

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: 50pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: WBFBP-02L
Operating Temperature - Junction: 125°C

패키지: -

Request a Quote

40 V

1A

550 mV @ 700 mA

Fast Recovery =< 500ns, > 200mA (Io)

15 ns

50 µA @ 40 V

50pF @ 1V, 1MHz

Surface Mount

0603 (1608 Metric)

WBFBP-02L

125°C

NRVBA130LT3G-VF01

onsemi

DIODE SCHOTTKY 30V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

30 V

1A

410 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 30 V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 125°C

WND08P16XQ

WeEn Semiconductors

DIODE GEN PURP 1.6KV 8A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

1600 V

8A

1.2 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1600 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220F

150°C

ND89N16KHPSA1

Infineon Technologies

DIODE GEN PURP 1.6KV 89A PB20-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 89A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C

패키지: -

재고33

1600 V

89A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1600 V

-

Chassis Mount

Module

BG-PB20-1

-40°C ~ 135°C

VSQS15A045-TE16L3

KYOCERA AVX

DIODE SCHOTTKY 45V 15A TO-277

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

45 V

15A

540 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 45 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277

-40°C ~ 150°C

V12PM63HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 4.6A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 4.6A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Capacitance @ Vr, F: 2400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고13,470

60 V

4.6A

650 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 60 V

2400pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

SS10150HE_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 150V 1A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Capacitance @ Vr, F: 85pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고27,054

150 V

1A

850 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 150 V

85pF @ 0V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C