페이지 336 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR1540	Fairchild/ON Semiconductor	DIODE GEN PURP 400V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고6,304	400V	15A	1.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	100µA @ 400V	-	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
BAT43W-7	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SOD-123	재고5,136	30V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
10BQ100	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AA, SMB	재고300,000	100V	1A	780mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 175°C
1N6075	Microsemi Corporation	DIODE GEN PURP 150V 850MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 850mA Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 155°C	패키지: A, Axial	재고5,120	150V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	-	Through Hole	A, Axial	-	-65°C ~ 155°C
UGB8GT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,448	400V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
UFS140JE3/TR13	Microsemi Corporation	DIODE GEN PURP 400V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AA, SMB	재고5,728	400V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 175°C
31DF6 A0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-201AD, Axial	재고5,808	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
SR515 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고2,400	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SE50PAG-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A DO-221BC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-221BC, SMA Flat Leads Exposed Pad	재고3,232	400V	5A	1.16V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2µs	10µA @ 400V	32pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-55°C ~ 175°C
EU01V1	Sanken	DIODE GEN PURP 400V 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고4,096	400V	250mA	2.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
SMD220PL-TP	Micro Commercial Co	DIODE SCHOTTKY 200V 2A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: 210pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	패키지: SOD-123F	재고4,480	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	210pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
SS15 R3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고6,480	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RB751S-40TE61	Rohm Semiconductor	DIODE SCHOTTKY 30V 30MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 30V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C (Max)	패키지: SC-79, SOD-523	재고6,218,976	30V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	2pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	EMD2	125°C (Max)
1PS76SB10,135	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	패키지: SC-76, SOD-323	재고5,808	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
ACGRC302-HF	Comchip Technology	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고24,036	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
PMEG1030EJ,115	Nexperia USA Inc.	DIODE SCHOTTKY 10V 3A SOD323F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 10V Capacitance @ Vr, F: 85pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C (Max)	패키지: SC-90, SOD-323F	재고148,200	10V	3A (DC)	530mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 10V	85pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C (Max)
MBR0580-TP	Micro Commercial Co	DIODE SCHOTTKY 80V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 800mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 80V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123	재고631,422	80V	500mA	800mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 80V	30pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
ARB551V-30-HF	Comchip Technology	DIODE SCHOTTKY 20V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C	패키지: -	재고8,973	20 V	500mA	470 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	Surface Mount	SC-76, SOD-323	SOD-323	125°C
MER2DAL_R1_00701	Panjit International Inc.	DIODE GEN PURP 200V 2A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고54,054	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 175°C
FR505GP-TP	Micro Commercial Co	DIODE GEN PURP 600V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	600 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
70HFR100	Solid State Inc.	DIODE GEN PURP 1KV 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	1000 V	70A	1.3 V @ 70 A	Standard Recovery >500ns, > 200mA (Io)	-	200 µA @ 1000 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
PMEG045V100EIPE-QZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 10A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22 ns Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: 700pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	패키지: -	재고29,580	45 V	10A	540 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	22 ns	500 µA @ 45 V	700pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
MBRM140T3H	onsemi	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
S6D06065E	SMC Diode Solutions	DIODE SCHOTTKY SILICON CARBIDE S Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 3 µA @ 650 V Capacitance @ Vr, F: 559pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	25A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	3 µA @ 650 V	559pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
GL41YHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.6KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	1600 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
FR103GP-AP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4454-TR-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 75V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	재고91,665	75 V	150mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
UFT5005	Microchip Technology	DIODE GEN PURP 100V 50A TO204AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 15 µA @ 50 V Capacitance @ Vr, F: 225pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	100 V	50A	1 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	15 µA @ 50 V	225pF @ 10V, 1MHz	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)	-65°C ~ 175°C

MUR1540

Fairchild/ON Semiconductor

DIODE GEN PURP 400V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 100µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고6,304

400V

15A

1.25V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

100µA @ 400V

-

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C

BAT43W-7

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SOD-123

재고5,136

30V

200mA (DC)

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

10BQ100

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

재고300,000

100V

1A

780mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 175°C

1N6075

Microsemi Corporation

DIODE GEN PURP 150V 850MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 850mA
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 155°C

패키지: A, Axial

재고5,120

150V

850mA

2.04V @ 9.4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 150V

-

Through Hole

A, Axial

-

-65°C ~ 155°C

UGB8GT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,448

400V

8A

1.25V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

UFS140JE3/TR13

Microsemi Corporation

DIODE GEN PURP 400V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

재고5,728

400V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Surface Mount

DO-214AA, SMB

DO-214BA

-55°C ~ 175°C

31DF6 A0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-201AD, Axial

재고5,808

600V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

20µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

SR515 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고2,400

150V

5A

1.05V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SE50PAG-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A DO-221BC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-221BC, SMA Flat Leads Exposed Pad

재고3,232

400V

5A

1.16V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2µs

10µA @ 400V

32pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-55°C ~ 175°C

EU01V1

Sanken

DIODE GEN PURP 400V 250MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고4,096

400V

250mA

2.5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

SMD220PL-TP

Micro Commercial Co

DIODE SCHOTTKY 200V 2A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: 210pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SOD-123F

재고4,480

200V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 200V

210pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

SS15 R3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고6,480

50V

1A

750mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RB751S-40TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 30V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)

패키지: SC-79, SOD-523

재고6,218,976

30V

30mA

370mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 30V

2pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

EMD2

125°C (Max)

1PS76SB10,135

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)

패키지: SC-76, SOD-323

재고5,808

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C (Max)

ACGRC302-HF

Comchip Technology

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고24,036

100V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

PMEG1030EJ,115

Nexperia USA Inc.

DIODE SCHOTTKY 10V 3A SOD323F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 10V
Capacitance @ Vr, F: 85pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Operating Temperature - Junction: 150°C (Max)

패키지: SC-90, SOD-323F

재고148,200

10V

3A (DC)

530mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 10V

85pF @ 1V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323F

150°C (Max)

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 800mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 80V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123

재고631,422

80V

500mA

800mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 80V

30pF @ 4V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

ARB551V-30-HF

Comchip Technology

DIODE SCHOTTKY 20V 500MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C

패키지: -

재고8,973

20 V

500mA

470 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 20 V

-

Surface Mount

SC-76, SOD-323

SOD-323

125°C

MER2DAL_R1_00701

Panjit International Inc.

DIODE GEN PURP 200V 2A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고54,054

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 175°C

FR505GP-TP

Micro Commercial Co

DIODE GEN PURP 600V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

600 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

10 µA @ 600 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

70HFR100

Solid State Inc.

DIODE GEN PURP 1KV 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

1000 V

70A

1.3 V @ 70 A

Standard Recovery >500ns, > 200mA (Io)

-

200 µA @ 1000 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

PMEG045V100EIPE-QZ

Nexperia USA Inc.

DIODE SCHOTTKY 45V 10A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

패키지: -

재고29,580

45 V

10A

540 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

22 ns

500 µA @ 45 V

700pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C

MBRM140T3H

onsemi

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

S6D06065E

SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 3 µA @ 650 V
Capacitance @ Vr, F: 559pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

25A

1.5 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

3 µA @ 650 V

559pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 175°C

GL41YHE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

1600 V

1A

1.2 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

FR103GP-AP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 200 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

1N4454-TR-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 75V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

재고91,665

75 V

150mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 50 V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 200°C

UFT5005

Microchip Technology

DIODE GEN PURP 100V 50A TO204AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
Capacitance @ Vr, F: 225pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

100 V

50A

1 V @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

15 µA @ 50 V

225pF @ 10V, 1MHz

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

-65°C ~ 175°C