페이지 347 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N1614R	Microsemi Corporation	DIODE GEN PURP 200V 15A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고3,360	200V	15A	1.5V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
SF10GG-T	Diodes Incorporated	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,984	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 400V	75pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
VS-10MQ040NPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1.5A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고636,000	40V	1.5A	540mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
B350-13	Diodes Incorporated	DIODE SCHOTTKY 50V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고2,592	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
UES706HR2	Microsemi Corporation	DIODE GEN PURP 400V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,008	400V	20A (DC)	1.25V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
R5020618FSWA	Powerex Inc.	DIODE GEN PURP 600V 175A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 175A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 45mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-205AA, DO-8, Stud	재고5,792	600V	175A	1.65V @ 470A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	45mA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
1N5806US	Semtech Corporation	D MET 2.5A SFST 150V SRFC MNT Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,048	-	-	-	-	-	-	-	-	-	-	-
FR70G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고4,784	400V	70A	1.4V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
AR4PD-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 77pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고4,192	200V	2A (DC)	1.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 200V	77pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
CMPD5001 BK	Central Semiconductor Corp	DIODE GEN PURP 120V 400MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 90V Capacitance @ Vr, F: 35pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-236-3, SC-59, SOT-23-3	재고7,984	120V	400mA	1.25V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 90V	35pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
AU01ZV0	Sanken	DIODE GEN PURP 200V 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.7V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고7,120	200V	500mA	1.7V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
RMPG06GHE3_A/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	패키지: MPG06, Axial	재고7,600	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	6.6pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
RS2KAHR3G	TSC America Inc.	DIODE, FAST, 1.5A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고7,984	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
STTH3BCF060U	STMicroelectronics	DIODE GEN PURP 600V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max)	패키지: DO-214AA, SMB	재고146,760	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	3µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
JANTXV1N4148-1	Aeroflex Metelics, Division of MACOM	DIODE SW 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-204AH, DO-35, Axial	재고9,168	75V	200mA (DC)	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
RR2LAM4STR	Rohm Semiconductor	DIODE GEN PURP 400V 2A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: SOD-128	재고25,608	400V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
S42150TS	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N249RB	Solid State Inc.	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	100 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
HS2MALH	Taiwan Semiconductor Corporation	75NS, 2A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고42,000	1000 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 1000 V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
V1FM10HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 1A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	95pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
B250-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	50 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
HER107-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	800 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
SF66G-AP	Micro Commercial Co	DIODE GEN PURP 400V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	400 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	90pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SURHD8560W1T4G	onsemi	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	5A	2.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-65°C ~ 175°C
UF206G_R2_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
WNSC5D046506Q	WeEn Semiconductors	DIODE SIL CARB 650V 4A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 138pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	138pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
MER2DAH_R1_00701	Panjit International Inc.	DIODE GEN PURP 200V 2A SOD123HE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고53,970	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
S12KC-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

JAN1N1614R

Microsemi Corporation

DIODE GEN PURP 200V 15A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고3,360

200V

15A

1.5V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

SF10GG-T

Diodes Incorporated

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,984

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 400V

75pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

VS-10MQ040NPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1.5A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고636,000

40V

1.5A

540mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

B350-13

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고2,592

50V

3A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 125°C

UES706HR2

Microsemi Corporation

DIODE GEN PURP 400V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,008

400V

20A (DC)

1.25V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

R5020618FSWA

Powerex Inc.

DIODE GEN PURP 600V 175A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 175A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 45mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-205AA, DO-8, Stud

재고5,792

600V

175A

1.65V @ 470A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

45mA @ 600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 150°C

1N5806US

Semtech Corporation

D MET 2.5A SFST 150V SRFC MNT

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,048

-

FR70G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고4,784

400V

70A

1.4V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

AR4PD-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 77pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고4,192

200V

2A (DC)

1.6V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 200V

77pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

CMPD5001 BK

Central Semiconductor Corp

DIODE GEN PURP 120V 400MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 90V
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

재고7,984

120V

400mA

1.25V @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 90V

35pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-65°C ~ 150°C

AU01ZV0

Sanken

DIODE GEN PURP 200V 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고7,120

200V

500mA

1.7V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

RMPG06GHE3_A/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

패키지: MPG06, Axial

재고7,600

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

6.6pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

RS2KAHR3G

TSC America Inc.

DIODE, FAST, 1.5A, 800V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고7,984

800V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

STTH3BCF060U

STMicroelectronics

DIODE GEN PURP 600V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)

패키지: DO-214AA, SMB

재고146,760

600V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

3µA @ 600V

-

Surface Mount

DO-214AA, SMB

SMB

175°C (Max)

JANTXV1N4148-1

Aeroflex Metelics, Division of MACOM

DIODE SW 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-204AH, DO-35, Axial

재고9,168

75V

200mA (DC)

1.2V @ 50mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 75V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 200°C

RR2LAM4STR

Rohm Semiconductor

DIODE GEN PURP 400V 2A PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-128

재고25,608

400V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

S42150TS

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

1N249RB

Solid State Inc.

DIODE GEN PURP REV 100V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

100 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

HS2MALH

Taiwan Semiconductor Corporation

75NS, 2A, 1000V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고42,000

1000 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 1000 V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

V1FM10HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

100 V

1A

770 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

95pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-40°C ~ 175°C

B250-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

50 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

200pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

HER107-AP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

800 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

SF66G-AP

Micro Commercial Co

DIODE GEN PURP 400V 6A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

400 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 400 V

90pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SURHD8560W1T4G

onsemi

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

600 V

5A

2.7 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-65°C ~ 175°C

UF206G_R2_00001

Panjit International Inc.

DIODE GEN PURP 600V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

600 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

100 ns

1 µA @ 600 V

35pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

WNSC5D046506Q

WeEn Semiconductors

DIODE SIL CARB 650V 4A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 138pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

4A

1.7 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 650 V

138pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

MER2DAH_R1_00701

Panjit International Inc.

DIODE GEN PURP 200V 2A SOD123HE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고53,970

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 175°C

S12KC-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 12A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

12A

1.1 V @ 12 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

78pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C