페이지 359 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S4PKHM3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고6,736	800V	4A	1.1V @ 4A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
PR1504S-T	Diodes Incorporated	DIODE GEN PURP 400V 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고2,160	400V	1.5A	1.2V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
A399D	Powerex Inc.	DIODE FAST 400A 400V DO-200AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,224	-	-	-	-	-	-	-	-	-	-	-
VS-SD200R16PC	Vishay Semiconductor Diodes Division	DIODE STD REC 200A 1600V DO205AC Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 630A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-205AC, DO-30, Stud	재고5,936	1600V	200A	1.4V @ 630A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 180°C
S2F	Semtech Corporation	DIODE GEN PURP 200V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 27pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: Axial	재고5,760	200V	2A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	27pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
FR20A02	GeneSiC Semiconductor	DIODE GEN PURP 50V 20A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고2,560	50V	20A	1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
VS-100BGQ015HF4	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 100A POWERTAB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 520mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 18mA @ 15V Capacitance @ Vr, F: 3800pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: PowerTab? Supplier Device Package: PowerTab? Operating Temperature - Junction: -55°C ~ 125°C	패키지: PowerTab?	재고2,944	15V	100A	520mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	18mA @ 15V	3800pF @ 5V, 1MHz	Through Hole	PowerTab?	PowerTab?	-55°C ~ 125°C
MUR860HC0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 8A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고3,696	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SJPL-L2	Sanken	DIODE GEN PURP 200V 3A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	패키지: 2-SMD, J-Lead	재고2,720	200V	3A	980mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
AB01BV0	Sanken	DIODE GEN PURP 800V 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고2,960	800V	500mA	2V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
AK 09WS	Sanken	DIODE SCHOTTKY 90V 700MA AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 810mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고7,504	90V	700mA	810mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 90V	-	Through Hole	Axial	-	-40°C ~ 150°C
ES2J M4G	TSC America Inc.	DIODE, SUPER FAST, 2A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고6,240	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS1DLHRFG	TSC America Inc.	DIODE, FAST, 0.8A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,648	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KLHR3G	TSC America Inc.	DIODE, 1A, 800V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고2,032	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
SS14L RHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-219AB	재고4,000	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
TST20U100C C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 20A, 10 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고4,000	100V	10A	790mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
STTH4R06DEE-TR	STMicroelectronics	DIODE GEN PURP 600V 4A POWERFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (3.3x3.3) Operating Temperature - Junction: 150°C (Max)	패키지: 8-PowerVDFN	재고3,408	600V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	3µA @ 600V	-	Surface Mount	8-PowerVDFN	PowerFlat? (3.3x3.3)	150°C (Max)
RB520S30T5G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SC-79, SOD-523	재고95,640	30V	200mA (DC)	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
1N3909AR	Microchip Technology	FAST RECOVERY RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 15 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	50 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	15 µA @ 50 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
SUF4007	Diotec Semiconductor	DIODE GP 1KV 1A MELF DO-213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB (Plastic) Operating Temperature - Junction: -50°C ~ 175°C	패키지: -	재고26,523	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB (Plastic)	-50°C ~ 175°C
1F2G-AP	Micro Commercial Co	DIODE GEN PURP 100V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: R-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	12pF @ 4V, 1MHz	Through Hole	R-1, Axial	R-1	-55°C ~ 150°C
GP3D008A065A	SemiQ	DIODE SIL CARB 650V 8A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: 336pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	336pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
S3190	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
TUAU8KH	Taiwan Semiconductor Corporation	80NS, 8A, 800V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 43pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	800 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	5 µA @ 800 V	43pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 150°C
BAS40WXHE3-TP	Micro Commercial Co	SMALL SIGNAL SCHOTTKY DIODES 40V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 7 ns Current - Reverse Leakage @ Vr: 500 nA @ 30 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	7 ns	500 nA @ 30 V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
JANS1N5811US	Microchip Technology	DIODE GEN PURP 150V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
VS-3C16ET07S2L-M3	Vishay General Semiconductor - Diodes Division	650 V POWER SIC GEN 3 MERGED PIN Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 85 µA @ 650 V Capacitance @ Vr, F: 700pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고4,797	650 V	16A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 650 V	700pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
MSASC100W45HS	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

S4PKHM3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고6,736

800V

4A

1.1V @ 4A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 800V

30pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

PR1504S-T

Diodes Incorporated

DIODE GEN PURP 400V 1.5A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고2,160

400V

1.5A

1.2V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

A399D

Powerex Inc.

DIODE FAST 400A 400V DO-200AA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,224

-

VS-SD200R16PC

Vishay Semiconductor Diodes Division

DIODE STD REC 200A 1600V DO205AC

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 630A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AC, DO-30, Stud

재고5,936

1600V

200A

1.4V @ 630A

Fast Recovery =< 500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-40°C ~ 180°C

S2F

Semtech Corporation

DIODE GEN PURP 200V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 27pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: Axial

재고5,760

200V

2A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 200V

27pF @ 5V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

FR20A02

GeneSiC Semiconductor

DIODE GEN PURP 50V 20A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고2,560

50V

20A

1V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

VS-100BGQ015HF4

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 100A POWERTAB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 18mA @ 15V
Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: PowerTab?
Supplier Device Package: PowerTab?
Operating Temperature - Junction: -55°C ~ 125°C

패키지: PowerTab?

재고2,944

15V

100A

520mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

18mA @ 15V

3800pF @ 5V, 1MHz

Through Hole

PowerTab?

-55°C ~ 125°C

MUR860HC0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 8A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고3,696

600V

8A

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SJPL-L2

Sanken

DIODE GEN PURP 200V 3A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 2-SMD, J-Lead

재고2,720

200V

3A

980mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 200V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

AB01BV0

Sanken

DIODE GEN PURP 800V 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고2,960

800V

500mA

2V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 800V

-

Through Hole

Axial

-40°C ~ 150°C

AK 09WS

Sanken

DIODE SCHOTTKY 90V 700MA AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 810mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고7,504

90V

700mA

810mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 90V

-

Through Hole

Axial

-

-40°C ~ 150°C

ES2J M4G

TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고6,240

600V

2A

1.7V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RS1DLHRFG

TSC America Inc.

DIODE, FAST, 0.8A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,648

200V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

S1KLHR3G

TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고2,032

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 800V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

SS14L RHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-219AB

재고4,000

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

TST20U100C C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 20A, 10

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고4,000

100V

10A

790mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

STTH4R06DEE-TR

STMicroelectronics

DIODE GEN PURP 600V 4A POWERFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)

패키지: 8-PowerVDFN

재고3,408

600V

4A

1.7V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

3µA @ 600V

-

Surface Mount

8-PowerVDFN

PowerFlat? (3.3x3.3)

150°C (Max)

RB520S30T5G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-79, SOD-523

재고95,640

30V

200mA (DC)

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C

1N3909AR

Microchip Technology

FAST RECOVERY RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

50 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

15 µA @ 50 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 150°C

SUF4007

Diotec Semiconductor

DIODE GP 1KV 1A MELF DO-213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB (Plastic)
Operating Temperature - Junction: -50°C ~ 175°C

패키지: -

재고26,523

1000 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1000 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB (Plastic)

-50°C ~ 175°C

1F2G-AP

Micro Commercial Co

DIODE GEN PURP 100V 1A R-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-1, Axial
Supplier Device Package: R-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

12pF @ 4V, 1MHz

Through Hole

R-1, Axial

R-1

-55°C ~ 150°C

GP3D008A065A

SemiQ

DIODE SIL CARB 650V 8A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: 336pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

8A

1.6 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 650 V

336pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

S3190

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

TUAU8KH

Taiwan Semiconductor Corporation

80NS, 8A, 800V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 43pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

800 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

5 µA @ 800 V

43pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

SMPC4.6U

-55°C ~ 150°C

BAS40WXHE3-TP

Micro Commercial Co

SMALL SIGNAL SCHOTTKY DIODES 40V

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 7 ns
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

40 V

200mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

7 ns

500 nA @ 30 V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

JANS1N5811US

Microchip Technology

DIODE GEN PURP 150V 3A B SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

3A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

VS-3C16ET07S2L-M3

Vishay General Semiconductor - Diodes Division

650 V POWER SIC GEN 3 MERGED PIN

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 85 µA @ 650 V
Capacitance @ Vr, F: 700pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고4,797

650 V

16A

1.5 V @ 16 A

No Recovery Time > 500mA (Io)

0 ns

85 µA @ 650 V

700pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

MSASC100W45HS

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-