페이지 369 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF10JG-A	Diodes Incorporated	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고4,064	600V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
1SR124-400AT-81	Rohm Semiconductor	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: GSR Operating Temperature - Junction: -60°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,120	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	GSR	-60°C ~ 150°C
RS1JHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,100	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	7pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
STTH1202FP	STMicroelectronics	DIODE GEN PURP 200V 12A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2 Full Pack	재고10,872	200V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220FPAC	175°C (Max)
1N4154TR	Fairchild/ON Semiconductor	DIODE GEN PURP 35V 100MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AH, DO-35, Axial	재고6,608	35V	100mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 25V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N5415	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: B, Axial	재고4,448	50V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 50V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
VS-80APF10PBF	Vishay Semiconductor Diodes Division	DIODE FAST REC 80A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-3	재고5,136	1000V	80A	1.35V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1000V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
FESF8FT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고3,456	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
VS-50WQ10FNHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: 183pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,472	100V	5.5A	770mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	183pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
31GF6-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-201AD, Axial	재고2,100	600V	3A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	20µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
BYM13-60-E3/97	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-213AB, MELF	재고2,608	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 150°C
U1D-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고7,008	200V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	5µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SF11GHR0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고5,936	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS14LHRTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-219AB	재고5,072	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
BAT43 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AH, DO-35, Axial	재고4,384	30V	200mA	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 25V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
1SS250(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 100MA SC59 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고35,760	200V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	60ns	1µA @ 200V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	125°C (Max)
S3D	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고1,970,448	200V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
BAS70H,115	Nexperia USA Inc.	DIODE SCHOTTKY 70V 70MA SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고55,416	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C (Max)
SK1010H-LTP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	100 V	10A	820 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 175°C
SE12DTLJ-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3.6A SMPD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 96pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고6,900	600 V	3.6A	1 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 600 V	96pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), Variant	SMPD	-55°C ~ 175°C
PMEG050V150EPE-QZ	Nexperia USA Inc.	DIODE SCHOTTKY 50V 15A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27 ns Current - Reverse Leakage @ Vr: 370 µA @ 50 V Capacitance @ Vr, F: 833pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	패키지: -	재고14,106	50 V	15A	650 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	27 ns	370 µA @ 50 V	833pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
RURU10060RA	Harris Corporation	100A, 600V ULTRAFAST DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
AU1FM-M3-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 1KV 1A DO219AB Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1000 V	1A	1.85 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 1000 V	8.2pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
UFR8515R	Microsemi Corporation	DIODE GEN PURP 150V DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 675pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	150 V	-	975 mV @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 150 V	675pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
S43110	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FRA802GF-BP	Micro Commercial Co	DIODE GEN PURP 100V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Isolated Tab	ITO-220AC	-55°C ~ 150°C
V30KM60HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 5A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 650 µA @ 60 V Capacitance @ Vr, F: 3200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	패키지: -	재고9,000	60 V	5A	670 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	650 µA @ 60 V	3200pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
SR1045-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	45 V	10A	550 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	450pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C

SF10JG-A

Diodes Incorporated

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고4,064

600V

1A

1.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

50pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

1SR124-400AT-81

Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: GSR
Operating Temperature - Junction: -60°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,120

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

GSR

-60°C ~ 150°C

RS1JHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,100

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

7pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

STTH1202FP

STMicroelectronics

DIODE GEN PURP 200V 12A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2 Full Pack

재고10,872

200V

12A

1.1V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

TO-220-2 Full Pack

TO-220FPAC

175°C (Max)

1N4154TR

Fairchild/ON Semiconductor

DIODE GEN PURP 35V 100MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

재고6,608

35V

100mA

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 25V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

1N5415

Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: B, Axial

재고4,448

50V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 50V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

VS-80APF10PBF

Vishay Semiconductor Diodes Division

DIODE FAST REC 80A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-3

재고5,136

1000V

80A

1.35V @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

480ns

100µA @ 1000V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

FESF8FT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고3,456

300V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

VS-50WQ10FNHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,472

100V

5.5A

770mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

183pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

31GF6-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-201AD, Axial

재고2,100

600V

3A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

20µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

BYM13-60-E3/97

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-213AB, MELF

재고2,608

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

80pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-55°C ~ 150°C

U1D-E3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고7,008

200V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

24ns

5µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SF11GHR0G

TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고5,936

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SS14LHRTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-219AB

재고5,072

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

BAT43 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AH, DO-35, Axial

재고4,384

30V

200mA

450mV @ 15mA

Small Signal =< 200mA (Io), Any Speed

5ns

100nA @ 25V

7pF @ 1V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

1SS250(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고35,760

200V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

60ns

1µA @ 200V

3pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

125°C (Max)

S3D

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고1,970,448

200V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 200V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

BAS70H,115

Nexperia USA Inc.

DIODE SCHOTTKY 70V 70MA SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고55,416

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 70V

2pF @ 0V, 1MHz

Surface Mount

SOD-123F

150°C (Max)

SK1010H-LTP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

100 V

10A

820 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 175°C

SE12DTLJ-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.6A SMPD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고6,900

600 V

3.6A

1 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

5 µA @ 600 V

96pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), Variant

SMPD

-55°C ~ 175°C

PMEG050V150EPE-QZ

Nexperia USA Inc.

DIODE SCHOTTKY 50V 15A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Current - Reverse Leakage @ Vr: 370 µA @ 50 V
Capacitance @ Vr, F: 833pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

패키지: -

재고14,106

50 V

15A

650 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

27 ns

370 µA @ 50 V

833pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C

RURU10060RA

Harris Corporation

100A, 600V ULTRAFAST DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

AU1FM-M3-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1A DO219AB

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1000 V

1A

1.85 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 1000 V

8.2pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

UFR8515R

Microsemi Corporation

DIODE GEN PURP 150V DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: 675pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

150 V

-

975 mV @ 85 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

50 µA @ 150 V

675pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

S43110

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

FRA802GF-BP

Micro Commercial Co

DIODE GEN PURP 100V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

60pF @ 4V, 1MHz

Through Hole

TO-220-2 Isolated Tab

ITO-220AC

-55°C ~ 150°C

V30KM60HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 5A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

패키지: -

재고9,000

60 V

5A

670 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

650 µA @ 60 V

3200pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C

SR1045-AP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

45 V

10A

550 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

450pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C