페이지 379 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10K-5008M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,472	-	-	-	-	-	-	-	-	-	-	-
MBR1635	ON Semiconductor	DIODE SCHOTTKY 35V 16A TO220-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2	재고96,180	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 35V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
1N4045R	Powerex Inc.	DIODE GEN PURP 100V 275A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-205AB, DO-9, Stud	재고4,864	100V	275A	-	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 100V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
125SPC015A	SMC Diode Solutions	DIODE SCHOTTKY 15V 120A SPD-3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 410mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 15V Capacitance @ Vr, F: 7200pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SPD-3A Supplier Device Package: SPD-3A Operating Temperature - Junction: -55°C ~ 125°C	패키지: SPD-3A	재고5,904	15V	120A	410mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	40mA @ 15V	7200pF @ 5V, 1MHz	Surface Mount	SPD-3A	SPD-3A	-55°C ~ 125°C
MBR2040FCTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 20A 40V ITO220AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고7,024	-	-	-	-	-	-	-	-	-	-	-
NRVB10100MFST1G	ON Semiconductor	DIODE SCHOTTKY 100V 10A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	패키지: 8-PowerTDFN, 5 Leads	재고2,304	100V	10A	950mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
TSPB15U45S S2G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 15A, 45 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.0 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고6,608	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
AR3PG-M3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.8A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 44pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고7,136	400V	1.8A (DC)	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 400V	44pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
GI1-1600GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고2,896	1600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1600V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
S2GHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고5,136	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BYG10K-E3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고1,274,400	800V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S3KBHM4G	TSC America Inc.	DIODE, 3A, 800V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고6,736	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
1N4934G A0G	TSC America Inc.	DIODE, FAST, 1A, 100V, 200NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,104	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CDBU0330	Comchip Technology	DIODE SCHOTTKY 30V 350MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6.4ns Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603 (1608 Metric) Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, No Lead	재고5,040	30V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	6.4ns	5µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	0603 (1608 Metric)	125°C (Max)
RS2A-13-F	Diodes Incorporated	DIODE GEN PURP 50V 1.5A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고372,000	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
AR1FJHM3-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 600V 1A DO219AB Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	1 µA @ 600 V	12.6pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
RSX101MM-30TFTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고73,917	30 V	1A	390 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
FS2G-LTP	Micro Commercial Co	DIODE GEN PURP 400V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	400 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C
SB54AFC-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 40V 5A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 159pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고16,182	40 V	5A	540 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	159pF @ 10V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
1N5817G-TR	Microchip Technology	DIODE SCHOTTKY 20V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO041, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-	Through Hole	DO-204AL, DO041, Axial	DO-41	-65°C ~ 150°C
FUS2MD_HF	Diodes Incorporated	ULTRAFAST RECOVERY RECTIFIER DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1 kV Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1 kV	15pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC	-55°C ~ 150°C
V2NL63HM3-H	Vishay	2A, 60V, DFN3820A TRENCH SKY REC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 360pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	60 V	2A	580 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	360pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
1N458A_S00Z	onsemi	DIODE GEN PURP 150V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	패키지: -	Request a Quote	150 V	500mA	1 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	25 nA @ 125 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
SBR0240LPW-7B	Diodes Incorporated	DIODE GEN PURP 40V 200MA 2DFN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: - Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3.8 ns Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 8pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	재고63,594	40 V	200mA	-	Small Signal =< 200mA (Io), Any Speed	3.8 ns	10 µA @ 40 V	8pF @ 5V, 1MHz	Surface Mount	0402 (1006 Metric)	X1-DFN1006-2	-65°C ~ 150°C
RB550VYM-30FHTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10.7 ns Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	패키지: -	Request a Quote	30 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	10.7 ns	30 µA @ 10 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
UF4006-AP	Micro Commercial Co	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	800 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
JANTXV1N6874UTK2AS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N648-TR	Microchip Technology	DIODE GP REV 500V 400MA DO35 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 500 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	500 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	200 nA @ 500 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C

RGP10K-5008M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,472

-

MBR1635

ON Semiconductor

DIODE SCHOTTKY 35V 16A TO220-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

재고96,180

35V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 35V

-

Through Hole

TO-220-2

-65°C ~ 175°C

1N4045R

Powerex Inc.

DIODE GEN PURP 100V 275A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-205AB, DO-9, Stud

재고4,864

100V

275A

-

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 100V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 190°C

125SPC015A

SMC Diode Solutions

DIODE SCHOTTKY 15V 120A SPD-3A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 410mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 15V
Capacitance @ Vr, F: 7200pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SPD-3A
Supplier Device Package: SPD-3A
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SPD-3A

재고5,904

15V

120A

410mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

40mA @ 15V

7200pF @ 5V, 1MHz

Surface Mount

SPD-3A

-55°C ~ 125°C

MBR2040FCTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 20A 40V ITO220AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고7,024

-

NRVB10100MFST1G

ON Semiconductor

DIODE SCHOTTKY 100V 10A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: 8-PowerTDFN, 5 Leads

재고2,304

100V

10A

950mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

TSPB15U45S S2G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 15A, 45

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.0
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고6,608

45V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 45V

-

Surface Mount

TO-277, 3-PowerDFN

SMPC4.0

-55°C ~ 150°C

AR3PG-M3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.8A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고7,136

400V

1.8A (DC)

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 400V

44pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

GI1-1600GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고2,896

1600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 1600V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

S2GHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고5,136

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 400V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BYG10K-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고1,274,400

800V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 800V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

S3KBHM4G

TSC America Inc.

DIODE, 3A, 800V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고6,736

800V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 800V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

1N4934G A0G

TSC America Inc.

DIODE, FAST, 1A, 100V, 200NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,104

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 100V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

CDBU0330

Comchip Technology

DIODE SCHOTTKY 30V 350MA 0603

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 350mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6.4ns
Current - Reverse Leakage @ Vr: 5µA @ 20V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603 (1608 Metric)
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, No Lead

재고5,040

30V

350mA

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

6.4ns

5µA @ 20V

50pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

0603 (1608 Metric)

125°C (Max)

RS2A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 1.5A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고372,000

50V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

AR1FJHM3-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 600V 1A DO219AB

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

140 ns

1 µA @ 600 V

12.6pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

RSX101MM-30TFTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고73,917

30 V

1A

390 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 30 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

FS2G-LTP

Micro Commercial Co

DIODE GEN PURP 400V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

400 V

2A

-

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 150°C

SB54AFC-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 40V 5A SMAF-C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 159pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고16,182

40 V

5A

540 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

159pF @ 10V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF-C

-55°C ~ 150°C

1N5817G-TR

Microchip Technology

DIODE SCHOTTKY 20V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO041, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

20 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 20 V

-

Through Hole

DO-204AL, DO041, Axial

DO-41

-65°C ~ 150°C

FUS2MD_HF

Diodes Incorporated

ULTRAFAST RECOVERY RECTIFIER DO-

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

2A

1.7 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 1 kV

15pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC

-55°C ~ 150°C

V2NL63HM3-H

Vishay

2A, 60V, DFN3820A TRENCH SKY REC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

60 V

2A

580 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 60 V

360pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 150°C

1N458A_S00Z

onsemi

DIODE GEN PURP 150V 500MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

패키지: -

Request a Quote

150 V

500mA

1 V @ 100 mA

Standard Recovery >500ns, > 200mA (Io)

-

25 nA @ 125 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

SBR0240LPW-7B

Diodes Incorporated

DIODE GEN PURP 40V 200MA 2DFN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

재고63,594

40 V

200mA

-

Small Signal =< 200mA (Io), Any Speed

3.8 ns

10 µA @ 40 V

8pF @ 5V, 1MHz

Surface Mount

0402 (1006 Metric)

X1-DFN1006-2

-65°C ~ 150°C

RB550VYM-30FHTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10.7 ns
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

패키지: -

Request a Quote

30 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

10.7 ns

30 µA @ 10 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

UF4006-AP

Micro Commercial Co

DIODE GEN PURP 800V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

800 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 125°C

JANTXV1N6874UTK2AS-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

1N648-TR

Microchip Technology

DIODE GP REV 500V 400MA DO35

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

500 V

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

200 nA @ 500 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C