페이지 456 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4001-N-0-1-BP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	패키지: DO-204AL, DO-41, Axial	재고3,248	50V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-
EGP50BHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AA, DO-27, Axial	재고2,144	100V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	95pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
RGP15DHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고7,488	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
STPS1545R	STMicroelectronics	DIODE SCHOTTKY 45V 15A I2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max)	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고2,336	45V	15A	840mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	I2PAK	175°C (Max)
DGS19-025CS	IXYS	DIODE SCHOTTKY 250V 31A TO252AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 31A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26ns Current - Reverse Leakage @ Vr: 400µA @ 250V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,752	250V	31A	1.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	400µA @ 250V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
BYW100-200	STMicroelectronics	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: 150°C (Max)	패키지: DO-204AC, DO-15, Axial	재고167,892	200V	1.5A	1.2V @ 4.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	150°C (Max)
ES2CA-13	Diodes Incorporated	DIODE GEN PURP 150V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고336,000	150V	2A	920mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
R7222505CSOO	Powerex Inc.	DIODE MODULE 2.5KV 500A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 50mA @ 2500V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	패키지: DO-200AB, B-PUK	재고5,824	2500V	500A	2.25V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	3µs	50mA @ 2500V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
UGF12J C0G	TSC America Inc.	DIODE, ULTRA FAST, 12A, 600V, 20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,888	600V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRA1630HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 550mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	패키지: TO-220-2	재고7,536	30V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SFF1004GA C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 200V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고4,448	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFS1605GHMNG	TSC America Inc.	DIODE, SUPER FAST, 16A, 300V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,312	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SBRD8320G-VF01	ON Semiconductor	DIODE SCHOTTKY 20V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,096	20V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 175°C
VS-30WQ04FNHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: 189pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,328	40V	3.5A	530mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	189pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 150°C
HT15G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고4,176	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1PA-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고4,064	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 50V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SJPL-H6VL	Sanken	DIODE GEN PURP 600V 2A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	패키지: 2-SMD, J-Lead	재고7,328	600V	2A	1.5V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
JANTX1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500µA @ 400V Capacitance @ Vr, F: 35pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, A	재고6,912	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500µA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
DFLS120LQ-7	Diodes Incorporated	DIODE SCHOTTKY 20V 1A POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 75pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: POWERDI?123	재고3,040	20V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	75pF @ 10V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-55°C ~ 125°C
BYM10-100-E3/97	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고39,924	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
ZLLS400TA-79	Diodes Incorporated	DIODE SCHOTTKY 40V 520MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 520mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 10 µA @ 30 V Capacitance @ Vr, F: 15pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	520mA	500 mV @ 400 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	10 µA @ 30 V	15pF @ 30V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
KSF30H60	KYOCERA AVX	DIODE GEN PURP 600V 30A TO247-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	1.35 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 600 V	-	Through Hole	TO-247-2	TO-247-2	-40°C ~ 175°C
AS3BDHM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 200V 3A DO214AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	200 V	3A	1.05 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 600 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
V12PM45HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: 2350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	45 V	12A	600 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	2350pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
JANTXV1N6841U3	Microchip Technology	DIODE SCHOTTKY 35V 10A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	35 V	10A	880 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)	-65°C ~ 150°C
MB510_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	재고25,173	100 V	5A	800 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 175°C
1N6763R	Microchip Technology	DIODE GEN PURP 100V 12A TO254 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	100 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	300pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-55°C ~ 175°C
MBR6150F_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 150V 6A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	6A	900 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 175°C

1N4001-N-0-1-BP

Micro Commercial Co

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

재고3,248

50V

1A (DC)

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-

EGP50BHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AA, DO-27, Axial

재고2,144

100V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

95pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

RGP15DHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고7,488

200V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

STPS1545R

STMicroelectronics

DIODE SCHOTTKY 45V 15A I2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고2,336

45V

15A

840mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

I2PAK

175°C (Max)

DGS19-025CS

IXYS

DIODE SCHOTTKY 250V 31A TO252AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 31A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26ns
Current - Reverse Leakage @ Vr: 400µA @ 250V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,752

250V

31A

1.5V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

26ns

400µA @ 250V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

BYW100-200

STMicroelectronics

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: 150°C (Max)

패키지: DO-204AC, DO-15, Axial

재고167,892

200V

1.5A

1.2V @ 4.5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

150°C (Max)

ES2CA-13

Diodes Incorporated

DIODE GEN PURP 150V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고336,000

150V

2A

920mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 150V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

R7222505CSOO

Powerex Inc.

DIODE MODULE 2.5KV 500A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2500V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 50mA @ 2500V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

재고5,824

2500V

500A

2.25V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

3µs

50mA @ 2500V

-

Chassis Mount

DO-200AB, B-PUK

-

UGF12J C0G

TSC America Inc.

DIODE, ULTRA FAST, 12A, 600V, 20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,888

600V

12A

2V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

5µA @ 600V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SRA1630HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

패키지: TO-220-2

재고7,536

30V

16A

550mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 125°C

SFF1004GA C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 200V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고4,448

200V

10A

975mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

70pF @ 4V, 1MHz

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

SFS1605GHMNG

TSC America Inc.

DIODE, SUPER FAST, 16A, 300V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,312

300V

16A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

60pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

SBRD8320G-VF01

ON Semiconductor

DIODE SCHOTTKY 20V 3A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,096

20V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

-65°C ~ 175°C

VS-30WQ04FNHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,328

40V

3.5A

530mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

189pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-40°C ~ 150°C

HT15G A0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고4,176

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

S1PA-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고4,064

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 50V

-

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

SJPL-H6VL

Sanken

DIODE GEN PURP 600V 2A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 2-SMD, J-Lead

재고7,328

600V

2A

1.5V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 600V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

JANTX1N5617US

Microsemi Corporation

DIODE GEN PURP 400V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500µA @ 400V
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, A

재고6,912

400V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500µA @ 400V

35pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

DFLS120LQ-7

Diodes Incorporated

DIODE SCHOTTKY 20V 1A POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 75pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -55°C ~ 125°C

패키지: POWERDI?123

재고3,040

20V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

75pF @ 10V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-55°C ~ 125°C

BYM10-100-E3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고39,924

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

ZLLS400TA-79

Diodes Incorporated

DIODE SCHOTTKY 40V 520MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 520mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

520mA

500 mV @ 400 mA

Fast Recovery =< 500ns, > 200mA (Io)

3 ns

10 µA @ 30 V

15pF @ 30V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

KSF30H60

KYOCERA AVX

DIODE GEN PURP 600V 30A TO247-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

600 V

30A

1.35 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

130 ns

50 µA @ 600 V

-

Through Hole

TO-247-2

-40°C ~ 175°C

AS3BDHM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 200V 3A DO214AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

200 V

3A

1.05 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 600 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

V12PM45HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

45 V

12A

600 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

2350pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

JANTXV1N6841U3

Microchip Technology

DIODE SCHOTTKY 35V 10A U3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3 (SMD-0.5)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

35 V

10A

880 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

3-SMD, No Lead

U3 (SMD-0.5)

-65°C ~ 150°C

MB510_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 100V 5A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

재고25,173

100 V

5A

800 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

-

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 175°C

1N6763R

Microchip Technology

DIODE GEN PURP 100V 12A TO254

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C

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100 V

12A

1.05 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 100 V

300pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254

-55°C ~ 175°C

MBR6150F_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 150V 6A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

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150 V

6A

900 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 150 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 175°C