페이지 492 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
EGP10F-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고2,640	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
R9G20411CSOO	Powerex Inc.	DIODE FAST REC R9G 1100A 400V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,256	-	-	-	-	-	-	-	-	-	-	-
STTH3R04Q	STMicroelectronics	DIODE GEN PURP 400V 3A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AC, DO-15, Axial	재고7,472	400V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	175°C (Max)
10TQ045STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,760	45V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
12TQ035	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 15A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고65,400	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MURB820	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고36,000	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
S70GR	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고2,368	400V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
1N1186	GeneSiC Semiconductor	DIODE GEN PURP 200V 35A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-203AB, DO-5, Stud	재고6,496	200V	35A	1.2V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
B350B-E3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 660mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고7,184	50V	3A	660mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
FR307G R0G	TSC America Inc.	DIODE, FAST, 3A, 1000V, 500NS, D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고2,656	-	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK39A M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,352	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK32A M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,216	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SD103AWS-G3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 350MA 40V SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SC-76, SOD-323	재고7,056	40V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
VS-1N1183	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-203AB, DO-5, Stud	재고5,952	50V	35A	1.7V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
BAS45A,113	Nexperia USA Inc.	DIODE GEN PURP 125V 250MA DO34 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34 Operating Temperature - Junction: 175°C (Max)	패키지: DO-204AG, DO-34, Axial	재고2,528	125V	250mA (DC)	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1nA @ 125V	4pF @ 0V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	DO-34	175°C (Max)
CRS09(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 90pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	패키지: SOD-123F	재고149,784	30V	1.5A	460mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	90pF @ 10V, 1MHz	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
SF1006G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고1,119	400 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
BAT720WT-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 35 V Capacitance @ Vr, F: 95pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	40 V	500mA	550 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	95pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C
VS-30ETH06-1-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 30A TO262AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262AA	-65°C ~ 175°C
BAS21X-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 150°C
1SS55-AZ	Renesas Electronics Corporation	DIODE GEN PURP 75V 100MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA Speed: - Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 100 nA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 200°C (Max)	패키지: -	Request a Quote	75 V	100mA	700 mV @ 1 mA	-	20 ns	100 nA @ 75 V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	200°C (Max)
S4250	Microchip Technology	DIODE GEN PURP 500V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	500 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 500 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
V30KM100HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 4.4A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4.4A Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 100 V Capacitance @ Vr, F: 2450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	패키지: -	Request a Quote	100 V	4.4A	810 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 100 V	2450pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
1N1341A	Microchip Technology	DIODE GEN PURP 50V 6A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	50 V	6A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
PMEG10020ELR-QX	Nexperia USA Inc.	DIODE SCHOTTKY 100V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.7 ns Current - Reverse Leakage @ Vr: 150 nA @ 100 V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	패키지: -	재고23,622	100 V	2A	830 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	3.7 ns	150 nA @ 100 V	70pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
1SS133M	Taiwan Semiconductor Corporation	DO-34, 90V, 0.15A, SWITCHING DIO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34 Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	90 V	150mA	1.2 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	4pF @ 0V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	DO-34	175°C
V12P15-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고17,274	150 V	12A	1.08 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
SDS065J008D3-ISARH	Luminus Devices Inc.	DIODE 650V-8A TO252-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 24 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	8A	1.3 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2L	-55°C ~ 175°C

EGP10F-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고2,640

300V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

R9G20411CSOO

Powerex Inc.

DIODE FAST REC R9G 1100A 400V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,256

-

STTH3R04Q

STMicroelectronics

DIODE GEN PURP 400V 3A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AC, DO-15, Axial

재고7,472

400V

3A

1.5V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

175°C (Max)

10TQ045STRR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,760

45V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

12TQ035

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 15A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고65,400

35V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

MURB820

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고36,000

200V

8A

975mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

S70GR

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고2,368

400V

70A

1.1V @ 70A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 180°C

1N1186

GeneSiC Semiconductor

DIODE GEN PURP 200V 35A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

재고6,496

200V

35A

1.2V @ 35A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 190°C

B350B-E3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고7,184

50V

3A

660mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

FR307G R0G

TSC America Inc.

DIODE, FAST, 3A, 1000V, 500NS, D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고2,656

-

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SK39A M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,352

90V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SK32A M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,216

20V

3A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SD103AWS-G3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 40V SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 350mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SC-76, SOD-323

재고7,056

40V

350mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 30V

50pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 125°C

VS-1N1183

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

재고5,952

50V

35A

1.7V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 190°C

BAS45A,113

Nexperia USA Inc.

DIODE GEN PURP 125V 250MA DO34

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AG, DO-34, Axial

재고2,528

125V

250mA (DC)

1V @ 100mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1nA @ 125V

4pF @ 0V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

DO-34

175°C (Max)

CRS09(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: SOD-123F

재고149,784

30V

1.5A

460mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

90pF @ 10V, 1MHz

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

SF1006G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 10A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고1,119

400 V

10A

1.3 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

50pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

BAT720WT-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Capacitance @ Vr, F: 95pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C

패키지: -

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40 V

500mA

550 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 35 V

95pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

125°C

VS-30ETH06-1-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO262AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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600 V

30A

2.6 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

50 µA @ 600 V

-

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262AA

-65°C ~ 175°C

BAS21X-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

200 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-65°C ~ 150°C

1SS55-AZ

Renesas Electronics Corporation

DIODE GEN PURP 75V 100MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 mA
Speed: -
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 200°C (Max)

패키지: -

Request a Quote

75 V

100mA

700 mV @ 1 mA

-

20 ns

100 nA @ 75 V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

200°C (Max)

S4250

Microchip Technology

DIODE GEN PURP 500V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

500 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 500 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

V30KM100HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 4.4A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 4.4A
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Capacitance @ Vr, F: 2450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

패키지: -

Request a Quote

100 V

4.4A

810 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 100 V

2450pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C

1N1341A

Microchip Technology

DIODE GEN PURP 50V 6A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

50 V

6A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 200°C

PMEG10020ELR-QX

Nexperia USA Inc.

DIODE SCHOTTKY 100V 2A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.7 ns
Current - Reverse Leakage @ Vr: 150 nA @ 100 V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C

패키지: -

재고23,622

100 V

2A

830 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

3.7 ns

150 nA @ 100 V

70pF @ 1V, 1MHz

Surface Mount

SOD-123W

175°C

1SS133M

Taiwan Semiconductor Corporation

DO-34, 90V, 0.15A, SWITCHING DIO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: DO-34
Operating Temperature - Junction: 175°C

패키지: -

Request a Quote

90 V

150mA

1.2 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

500 nA @ 80 V

4pF @ 0V, 1MHz

Through Hole

DO-204AG, DO-34, Axial

DO-34

175°C

V12P15-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고17,274

150 V

12A

1.08 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 150 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

SDS065J008D3-ISARH

Luminus Devices Inc.

DIODE 650V-8A TO252-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 24 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

8A

1.3 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

24 µA @ 650 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252-2L

-55°C ~ 175°C