페이지 62 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RS1A-13	Diodes Incorporated	DIODE GEN PURP 50V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고5,296	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
6TQ035STRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 6A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,288	35V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
D5810N04T VF	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 600V 9240A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,784	-	-	-	-	-	-	-	-	-	-	-
T85HFL10S05	Vishay Semiconductor Diodes Division	DIODE MODULE 100V 85A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 20mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	패키지: D-55 T-Module	재고4,624	100V	85A	-	Fast Recovery =< 500ns, > 200mA (Io)	500ns	20mA @ 100V	-	Chassis Mount	D-55 T-Module	D-55	-
S20F	Semtech Corporation	DIODE GEN PURP 2KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 5V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 1µA @ 2000V Capacitance @ Vr, F: 4pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: Axial	재고6,560	2000V	500mA	5V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 2000V	4pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
1N483A	Microsemi Corporation	DIODE RECT STD RECOVERY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고4,992	-	-	-	-	-	-	-	-	-	-	-
SF2002GHC0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고7,680	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFA805G C0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고2,240	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
GP10-4002E-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	패키지: DO-204AL, DO-41, Axial	재고3,408	100V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
SS34L RVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,872	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RR264M-400TR	Rohm Semiconductor	DIODE GEN PURP 400V 700MA PMDU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고3,944,268	400V	700mA	1.1V @ 700mA	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	SOD-123F	PMDU	150°C (Max)
RB450FT106	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max)	패키지: SC-70, SOT-323	재고56,400	40V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	6pF @ 10V, 1MHz	Surface Mount	SC-70, SOT-323	UMD3	125°C (Max)
STTH15S12D	STMicroelectronics	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	패키지: TO-220-2	재고8,916	1200V	15A	3.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
CDBC340-G	Comchip Technology	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 125°C (Max)	패키지: DO-214AB, SMC	재고511,692	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	125°C (Max)
PMEG2010ER,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 340mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 175pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: CFP3 Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123W	재고186,156	20V	1A	340mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	175pF @ 1V, 1MHz	Surface Mount	SOD-123W	CFP3	150°C (Max)
RUP1301UMTL	Rohm Semiconductor	DIODE STANDARD UMT Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FR156	SMC Diode Solutions	DIODE GEN PURP 800V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	800 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	30pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
DZ600N08KHPSA1	Infineon Technologies	DIODE GEN PURP 800V 735A PB501-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 735A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB501-1 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	800 V	735A	1.4 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 800 V	-	Chassis Mount	Module	BG-PB501-1	150°C
FR3J	SMC Diode Solutions	DIODE GEN PURP 600V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	600 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 150°C
1N248RB	Solid State Inc.	DIODE GEN PURP REV 50V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	50 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
V10PWL63HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 10A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 60 V Capacitance @ Vr, F: 2100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고13,500	60 V	10A	580 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 60 V	2100pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
VS-TH400BL12P-S2	Vishay General Semiconductor - Diodes Division	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CMR1U-06M-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	1A	1.4 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
ER1C-LTP	Micro Commercial Co	DIODE GP 150V 1A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	150 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-50°C ~ 150°C
HRW0202ATR-E	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
WNSC2D06650XQ	WeEn Semiconductors	DIODE SIL CARBIDE 650V 6A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 650 V Capacitance @ Vr, F: 198pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C	패키지: -	Request a Quote	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	198pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C
RS1GAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고21,000	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
V8PA6HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 8A DO221BC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 µA @ 60 V Capacitance @ Vr, F: 1030pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고23,310	60 V	8A	630 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 60 V	1030pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-40°C ~ 150°C

RS1A-13

Diodes Incorporated

DIODE GEN PURP 50V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고5,296

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

6TQ035STRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 6A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,288

35V

6A

600mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

D5810N04T VF

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 600V 9240A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,784

-

T85HFL10S05

Vishay Semiconductor Diodes Division

DIODE MODULE 100V 85A D-55

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 20mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-55 T-Module
Supplier Device Package: D-55
Operating Temperature - Junction: -

패키지: D-55 T-Module

재고4,624

100V

85A

-

Fast Recovery =< 500ns, > 200mA (Io)

500ns

20mA @ 100V

-

Chassis Mount

D-55 T-Module

D-55

-

S20F

Semtech Corporation

DIODE GEN PURP 2KV 500MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 5V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 1µA @ 2000V
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: Axial

재고6,560

2000V

500mA

5V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

1µA @ 2000V

4pF @ 5V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

1N483A

Microsemi Corporation

DIODE RECT STD RECOVERY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고4,992

-

SF2002GHC0G

TSC America Inc.

DIODE, SUPER FAST, 20A, 100V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고7,680

100V

20A

975mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

80pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

SFA805G C0G

TSC America Inc.

DIODE, SUPER FAST, 8A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고2,240

300V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

60pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

GP10-4002E-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

재고3,408

100V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

SS34L RVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,872

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RR264M-400TR

Rohm Semiconductor

DIODE GEN PURP 400V 700MA PMDU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고3,944,268

400V

700mA

1.1V @ 700mA

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

30pF @ 4V, 1MHz

Surface Mount

SOD-123F

PMDU

150°C (Max)

RB450FT106

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)

패키지: SC-70, SOT-323

재고56,400

40V

100mA

450mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

6pF @ 10V, 1MHz

Surface Mount

SC-70, SOT-323

UMD3

125°C (Max)

STTH15S12D

STMicroelectronics

DIODE GEN PURP 1.2KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

재고8,916

1200V

15A

3.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 1200V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

CDBC340-G

Comchip Technology

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: 125°C (Max)

패키지: DO-214AB, SMC

재고511,692

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

125°C (Max)

PMEG2010ER,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 340mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123W

재고186,156

20V

1A

340mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

175pF @ 1V, 1MHz

Surface Mount

SOD-123W

CFP3

150°C (Max)

RUP1301UMTL

Rohm Semiconductor

DIODE STANDARD UMT

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

FR156

SMC Diode Solutions

DIODE GEN PURP 800V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

800 V

1.5A

1.3 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 800 V

30pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

DZ600N08KHPSA1

Infineon Technologies

DIODE GEN PURP 800V 735A PB501-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 735A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB501-1
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

800 V

735A

1.4 V @ 2200 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 800 V

-

Chassis Mount

Module

BG-PB501-1

150°C

FR3J

SMC Diode Solutions

DIODE GEN PURP 600V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

600 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 150°C

1N248RB

Solid State Inc.

DIODE GEN PURP REV 50V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

50 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 50 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

V10PWL63HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 10A SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고13,500

60 V

10A

580 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 60 V

2100pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 150°C

VS-TH400BL12P-S2

Vishay General Semiconductor - Diodes Division

DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

CMR1U-06M-BK-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 600V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

600 V

1A

1.4 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 600 V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

ER1C-LTP

Micro Commercial Co

DIODE GP 150V 1A DO214AA HSMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

150 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 150 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA, HSMB

-50°C ~ 150°C

HRW0202ATR-E

Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

WNSC2D06650XQ

WeEn Semiconductors

DIODE SIL CARBIDE 650V 6A TO220F

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C

패키지: -

Request a Quote

650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 650 V

198pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220F

175°C

RS1GAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A THIN SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고21,000

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 400 V

7pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

V8PA6HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 8A DO221BC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고23,310

60 V

8A

630 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

600 µA @ 60 V

1030pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-40°C ~ 150°C