페이지 698 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

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제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
R6202430XXOO
Powerex Inc.

DIODE MODULE 2.4KV 300A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
패키지: DO-200AA, A-PUK
재고3,328
2400V
300A
1.7V @ 800A
Standard Recovery >500ns, > 200mA (Io)
6µs
50mA @ 2400V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
R6220655ESOO
Powerex Inc.

DIODE MODULE 600V 550A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: DO-200AA, A-PUK
재고3,504
600V
550A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 600V
-
Chassis Mount
DO-200AA, A-PUK
-
-
1N5623
Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 500nA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 12V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: A, Axial
재고3,360
1000V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
500nA @ 1000V
15pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
VS-30ETH06-N3
Vishay Semiconductor Diodes Division

DIODE FRED 30A 600V TO-220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 31ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고3,424
600V
30A
2.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
31ns
50µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
FESF16HT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 16A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고6,752
500V
16A
1.5V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
hot AS1PD-M3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-220AA
재고348,000
200V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 200V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
S3KBHR5G
TSC America Inc.

DIODE, 3A, 800V, AEC-Q101, DO-21

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고2,464
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
VS-70HFL100S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: DO-203AB, DO-5, Stud
재고6,420
1000V
70A
1.85V @ 219.8A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
100µA @ 1000V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
VS-6TQ045PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고9,288
45V
6A
600mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
DB2U30800L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA USSMINI

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.3ns
  • Current - Reverse Leakage @ Vr: 120µA @ 30V
  • Capacitance @ Vr, F: 2.9pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: USSMINI2-F2-B
  • Operating Temperature - Junction: 125°C (Max)
패키지: SOD-923
재고103,356
30V
100mA
420mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1.3ns
120µA @ 30V
2.9pF @ 10V, 1MHz
Surface Mount
SOD-923
USSMINI2-F2-B
125°C (Max)
hot STTH6006W
STMicroelectronics

DIODE GEN PURP 600V 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-247-2 (Straight Leads)
재고117,864
600V
60A
1.85V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
50µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
NTE5825
NTE Electronics, Inc

DIODE GEN PURP 1KV 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: -
Request a Quote
1000 V
12A
1.4 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
400 ns
25 µA @ 1000 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
BD890YS_L2_00001
Panjit International Inc.

DIODE SCHOTTKY 90V 8A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: -
Request a Quote
90 V
8A
800 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 90 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
-65°C ~ 175°C
1N2278R
Solid State Inc.

DIODE GEN PURP REV 600V 40A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
Request a Quote
600 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 600 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
STPSC20H12G2Y-TR
STMicroelectronics

DIODE SIL CARB 1.2KV 20A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
  • Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고3,000
1200 V
20A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
-
120 µA @ 1200 V
1650pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
SMD1200PLHE3-TP
Micro Commercial Co

DIODE SCHOTTKY 200V 1A SOD123FL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고5,520
200 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 200 V
30pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
MUR160A
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 27pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고15,000
600 V
1A
1.25 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 600 V
27pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
VS-8ESU06HM3-H
Vishay

FREDS - SMPC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
600 V
8A
1.36 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
5 µA @ 600 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SDUR10Q60
SMC Diode Solutions

600V, 10A, TO-220AC, ULTRA FAST

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고150
-
-
-
-
-
-
-
-
-
-
-
ER3B-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -50°C ~ 175°C
패키지: -
Request a Quote
100 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 100 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-50°C ~ 175°C
ST8100S
SMC Diode Solutions

100V, 8A, TO-277B, ULTRA LOW VF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 70 µA @ 100 V
  • Capacitance @ Vr, F: 542pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277B
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고30,000
100 V
8A
680 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
70 µA @ 100 V
542pF @ 5V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
SK55A-LTP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 50 V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
50 V
5A
750 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 50 V
200pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
VS-35APF12L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 35A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 35 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 450 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
1200 V
35A
1.47 V @ 35 A
Fast Recovery =< 500ns, > 200mA (Io)
450 ns
100 µA @ 1200 V
-
Through Hole
TO-247-3
TO-247AD
-40°C ~ 150°C
HERAF1606G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고3,750
600 V
16A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
10 µA @ 600 V
110pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
RB078RSM15STFTL1
Rohm Semiconductor

150V 5A, TO-277GE, ULTRA LOW IR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.1 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 175°C
패키지: -
재고11,835
150 V
5A
870 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.1 µA @ 150 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
175°C
BAS316-DG-B4X
Nexperia USA Inc.

DIODE GEN PURP 100V 250MA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C (Max)
패키지: -
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100 V
250mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 80 V
1.5pF @ 0V, 1MHz
Surface Mount
-
-
150°C (Max)
TUAU4GH
Taiwan Semiconductor Corporation

50NS, 4A, 400V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 62pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.6U
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고18,000
400 V
4A
1.3 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 400 V
62pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
SMPC4.6U
-55°C ~ 175°C
HER204G-AP
Micro Commercial Co

DIODE GEN PURP 300V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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300 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 300 V
50pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C