페이지 741 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RB085B-40GTL	Rohm Semiconductor	DIODE SCHOTTKY SSOP3 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고2,288	-	-	-	-	-	-	-	-	-	-	-
VS-80EPF02PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 80A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-3	재고6,880	200V	80A	1.25V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	190ns	100µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
SBLB8L40HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 8A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 500mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 125°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,104	40V	8A	500mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 125°C
IDW40G65C5FKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 40A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.4mA @ 650V Capacitance @ Vr, F: 1140pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-3	재고7,360	650V	40A (DC)	1.7V @ 40A	No Recovery Time > 500mA (Io)	0ns	1.4mA @ 650V	1140pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDD12SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO252-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,504	600V	12A (DC)	2.1V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
VS-41HF40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	패키지: DO-203AB, DO-5, Stud	재고5,568	400V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
1N3882R	GeneSiC Semiconductor	DIODE GEN PURP REV 300V 6A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,648	300V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
FESB16CT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,632	150V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
BYW172F-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 300V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-64, Axial	재고2,896	300V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	1µA @ 300V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
AR4PJ-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 77pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고3,488	600V	2A (DC)	1.6V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	10µA @ 600V	77pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
RS2K-M3/52T	Vishay Semiconductor Diodes Division	DIODE SW 1.5A 800V 500NS DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고5,040	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	17pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VS-8ETU04SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 43ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고9,084	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	43ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
VSB3200-M3/54	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 200V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60µA @ 200V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-201AD, Axial	재고13,290	200V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 200V	175pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
SS24FL	Fairchild/ON Semiconductor	DIODE SCHOTTKY 40V 2A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.495ns Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 125°C	패키지: SOD-123F	재고27,864	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	9.495ns	100µA @ 40V	-	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 125°C
SK106-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 10A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AB, SMC	재고79,800	60V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	500pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
1SS119-04TJ-E	Renesas Electronics Corporation	RECTIFIER DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N1347RA	Solid State Inc.	DIODE GEN PURP REV 500V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	500 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
MURS460-E3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 2.4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	600 V	2.4A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
UT4020	Microchip Technology	DIODE GEN PURP 200V 4A B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: B Operating Temperature - Junction: -195°C ~ 175°C	패키지: -	Request a Quote	200 V	4A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	-	Through Hole	Axial	B	-195°C ~ 175°C
SF1608G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,700	600 V	16A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
PPH10100-AQ	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: -50°C ~ 175°C	패키지: -	Request a Quote	100 V	10A	680 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	-50°C ~ 175°C
PCFF45H120SWF	onsemi	1200V/45A GEN7 FRD HS SAWN-ON-FO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 45 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 244.9 ns Current - Reverse Leakage @ Vr: 20.2 A @ 1.2 kA Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	1200 V	45A	1.9 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	244.9 ns	20.2 A @ 1.2 kA	-	Surface Mount	Die	Die	-40°C ~ 175°C
B140WS-7-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: 125pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -40°C ~ 125°C	패키지: -	Request a Quote	40 V	1A	620 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	125pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-40°C ~ 125°C
GSBAS40LP	Good-Ark Semiconductor	DIODE, SCHOTTKY, 200MA, 40V, DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 200 nA @ 30 V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: DFN1006-2 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고52,935	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	200 nA @ 30 V	2.5pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	DFN1006-2	-55°C ~ 125°C
DSS6-015AS-TRL	IXYS	DIODE SCHOTTKY 150V 6A TO252AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고7,161	150 V	6A	780 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 150 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
SK220	SMC Diode Solutions	DIODE SCHOTTKY 200V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 170pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	170pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
IDK05G120C5XTMA1	Infineon Technologies	DIODE SIC 1.2KV 19.1A TO263-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 19.1A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 33 µA @ 1200 V Capacitance @ Vr, F: 301pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고2,874	1200 V	19.1A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	-	33 µA @ 1200 V	301pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2-1	-55°C ~ 175°C
PMEG4005ESFCYL	Nexperia USA Inc.	PMEG4005ESF - 40V, 0.5A LOW VF M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.28 ns Current - Reverse Leakage @ Vr: 6.5 µA @ 40 V Capacitance @ Vr, F: 17pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	500mA	880 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	1.28 ns	6.5 µA @ 40 V	17pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	DSN0603-2	150°C

RB085B-40GTL

Rohm Semiconductor

DIODE SCHOTTKY SSOP3

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고2,288

-

VS-80EPF02PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 80A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-3

재고6,880

200V

80A

1.25V @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

190ns

100µA @ 200V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

SBLB8L40HE3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 8A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 125°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,104

40V

8A

500mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 125°C

IDW40G65C5FKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 40A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.4mA @ 650V
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-3

재고7,360

650V

40A (DC)

1.7V @ 40A

No Recovery Time > 500mA (Io)

0ns

1.4mA @ 650V

1140pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDD12SG60CXTMA1

Infineon Technologies

DIODE SCHOTTKY 600V 12A TO252-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,504

600V

12A (DC)

2.1V @ 12A

No Recovery Time > 500mA (Io)

0ns

100µA @ 600V

310pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

VS-41HF40

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

재고5,568

400V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 190°C

1N3882R

GeneSiC Semiconductor

DIODE GEN PURP REV 300V 6A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 15µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,648

300V

6A

1.4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

15µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

FESB16CT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 16A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,632

150V

16A

975mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 150V

175pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

BYW172F-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 1µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

재고2,896

300V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

1µA @ 300V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

AR4PJ-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 77pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고3,488

600V

2A (DC)

1.6V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

10µA @ 600V

77pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

RS2K-M3/52T

Vishay Semiconductor Diodes Division

DIODE SW 1.5A 800V 500NS DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고5,040

800V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

17pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

VS-8ETU04SPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 43ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고9,084

400V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

43ns

10µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

VSB3200-M3/54

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60µA @ 200V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-201AD, Axial

재고13,290

200V

3A

1.2V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

60µA @ 200V

175pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-40°C ~ 150°C

SS24FL

Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 2A SOD123F

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9.495ns
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SOD-123F

재고27,864

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

9.495ns

100µA @ 40V

-

Surface Mount

SOD-123F

-55°C ~ 125°C

SK106-TP

Micro Commercial Co

DIODE SCHOTTKY 60V 10A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

재고79,800

60V

10A

850mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

500pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

1SS119-04TJ-E

Renesas Electronics Corporation

RECTIFIER DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

1N1347RA

Solid State Inc.

DIODE GEN PURP REV 500V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

500 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

MURS460-E3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 2.4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2.4A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

600 V

2.4A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 600 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

UT4020

Microchip Technology

DIODE GEN PURP 200V 4A B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: B
Operating Temperature - Junction: -195°C ~ 175°C

패키지: -

Request a Quote

200 V

4A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 200 V

-

Through Hole

Axial

B

-195°C ~ 175°C

SF1608G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고2,700

600 V

16A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 600 V

60pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

PPH10100-AQ

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: -50°C ~ 175°C

패키지: -

Request a Quote

100 V

10A

680 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

-50°C ~ 175°C

PCFF45H120SWF

onsemi

1200V/45A GEN7 FRD HS SAWN-ON-FO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 45 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 244.9 ns
Current - Reverse Leakage @ Vr: 20.2 A @ 1.2 kA
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

1200 V

45A

1.9 V @ 45 A

Fast Recovery =< 500ns, > 200mA (Io)

244.9 ns

20.2 A @ 1.2 kA

-

Surface Mount

Die

-40°C ~ 175°C

B140WS-7-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: 125pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -40°C ~ 125°C

패키지: -

Request a Quote

40 V

1A

620 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

125pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-40°C ~ 125°C

GSBAS40LP

Good-Ark Semiconductor

DIODE, SCHOTTKY, 200MA, 40V, DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고52,935

40 V

200mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

200 nA @ 30 V

2.5pF @ 0V, 1MHz

Surface Mount

0402 (1006 Metric)

DFN1006-2

-55°C ~ 125°C

DSS6-015AS-TRL

IXYS

DIODE SCHOTTKY 150V 6A TO252AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고7,161

150 V

6A

780 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 150 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

SK220

SMC Diode Solutions

DIODE SCHOTTKY 200V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Capacitance @ Vr, F: 170pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

2A

900 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 200 V

170pF @ 5V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

IDK05G120C5XTMA1

Infineon Technologies

DIODE SIC 1.2KV 19.1A TO263-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 19.1A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고2,874

1200 V

19.1A

1.8 V @ 5 A

No Recovery Time > 500mA (Io)

-

33 µA @ 1200 V

301pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-2-1

-55°C ~ 175°C

PMEG4005ESFCYL

Nexperia USA Inc.

PMEG4005ESF - 40V, 0.5A LOW VF M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.28 ns
Current - Reverse Leakage @ Vr: 6.5 µA @ 40 V
Capacitance @ Vr, F: 17pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

500mA

880 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

1.28 ns

6.5 µA @ 40 V

17pF @ 1V, 1MHz

Surface Mount

0201 (0603 Metric)

DSN0603-2

150°C