페이지 753 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS14-61HE3J_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고7,376	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SS2P5HE3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고5,872	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
MA2Q73900L	Panasonic Electronic Components	DIODE SCHOTTKY 90V 700MA NMINIP2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 800mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1mA @ 90V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: NMiniP2-J1 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-214BA	재고14,400	90V	700mA	800mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	1mA @ 90V	50pF @ 10V, 1MHz	Surface Mount	DO-214BA	NMiniP2-J1	-40°C ~ 125°C
JANTX1N5809US	Microsemi Corporation	DIODE GEN PURP 100V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, B	재고4,416	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
VS-HFA25TB60STLHM3	Vishay Semiconductor Diodes Division	DIODE HEXFRED 25A 600V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,656	600V	25A	1.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	600pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
MBR1035 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고2,320	35V	10A	700mV @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
EK 06V	Sanken	DIODE SCHOTTKY 60V 700MA AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고3,888	60V	700mA	620mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	Axial	-	-40°C ~ 150°C
SB550A-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고4,192	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SS210LHRQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고4,672	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LS RVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123H	재고5,888	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
ES1LJ M2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고3,232	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1F1TA	SMC Diode Solutions	DIODE GEN PURP 50V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1 (Axial) Supplier Device Package: R-1 Operating Temperature - Junction: -65°C ~ 150°C	패키지: R-1 (Axial)	재고6,208	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	R-1 (Axial)	R-1	-65°C ~ 150°C
V35PW15HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 35A 150V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 150V Capacitance @ Vr, F: 1620pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,792	150V	35A	1.4V @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 150V	1620pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
MBR0580S1-7	Diodes Incorporated	DIODE SCHOTTKY 80V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 800mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 80V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-123	재고3,712	80V	500mA	800mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 80V	15pF @ 5V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 175°C
VB20150S-E3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,768	150V	20A	1.43V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
RF101LAM4STFTR	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고7,326	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 400 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
BAT54W-HG3-18	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	패키지: -	재고993	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
S1KL	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고43,011	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	5 µA @ 800 V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
PG602R_R2_00001	Panjit International Inc.	DIODE GEN PURP 200V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	200 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	300pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
V7NM153-M3-H	Vishay General Semiconductor - Diodes Division	7A, 150V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 150 V Capacitance @ Vr, F: 390pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	150 V	2A	980 mV @ 7 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 150 V	390pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 175°C
SB10100	SMC Diode Solutions	100V, 10A, DO-201AD, DIODE SCHOT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고102	100 V	10A	850 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG5JH	Taiwan Semiconductor Corporation	20NS, 5A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 30 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	600 V	5A	3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	30 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
ST3545AX-C	SMC Diode Solutions	TRENCH SCHOTTKY DIODE 45V 35A R- Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-7, Axial Supplier Device Package: R-7 Operating Temperature - Junction: -	패키지: -	재고4,800	-	-	-	-	-	-	-	Through Hole	R-7, Axial	R-7	-
SBRD8320G	onsemi	DIODE SCHOTTKY 20V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	20 V	3A	600 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-65°C ~ 175°C
ERT2GAFC_R1_00001	Panjit International Inc.	DIODE GEN PURP 400V 2A SMAF-C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,362	400 V	2A	1.25 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 400 V	25pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
RR268MM-600TR	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDU Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: -	재고22,920	400 V	1A	980 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
CGRAT103-HF	Comchip Technology	DIODE GENERAL PURPOSE 2010 SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
R6001030XXYA	Powerex Inc.	DIODE GP 2.6KV 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2600 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 800 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 13 µs Current - Reverse Leakage @ Vr: 50 mA @ 2600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	2600 V	300A	1.4 V @ 800 A	Standard Recovery >500ns, > 200mA (Io)	13 µs	50 mA @ 2600 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 150°C

SS14-61HE3J_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고7,376

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

SS2P5HE3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고5,872

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

80pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

MA2Q73900L

Panasonic Electronic Components

DIODE SCHOTTKY 90V 700MA NMINIP2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 800mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 1mA @ 90V
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: NMiniP2-J1
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-214BA

재고14,400

90V

700mA

800mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

1mA @ 90V

50pF @ 10V, 1MHz

Surface Mount

DO-214BA

NMiniP2-J1

-40°C ~ 125°C

JANTX1N5809US

Microsemi Corporation

DIODE GEN PURP 100V 3A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, B

재고4,416

100V

3A

875mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 100V

60pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 175°C

VS-HFA25TB60STLHM3

Vishay Semiconductor Diodes Division

DIODE HEXFRED 25A 600V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,656

600V

25A

1.7V @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 600V

600pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

MBR1035 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고2,320

35V

10A

700mV @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

EK 06V

Sanken

DIODE SCHOTTKY 60V 700MA AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고3,888

60V

700mA

620mV @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Through Hole

Axial

-

-40°C ~ 150°C

SB550A-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고4,192

50V

5A

700mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SS210LHRQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고4,672

100V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SS115LS RVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123H

재고5,888

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

80pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

ES1LJ M2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고3,232

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

18pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1F1TA

SMC Diode Solutions

DIODE GEN PURP 50V 1A R-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-1 (Axial)
Supplier Device Package: R-1
Operating Temperature - Junction: -65°C ~ 150°C

패키지: R-1 (Axial)

재고6,208

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

15pF @ 4V, 1MHz

Through Hole

R-1 (Axial)

R-1

-65°C ~ 150°C

V35PW15HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 150V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 150V
Capacitance @ Vr, F: 1620pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,792

150V

35A

1.4V @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 150V

1620pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 150°C

MBR0580S1-7

Diodes Incorporated

DIODE SCHOTTKY 80V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 800mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 80V
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-123

재고3,712

80V

500mA

800mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 80V

15pF @ 5V, 1MHz

Surface Mount

SOD-123

-55°C ~ 175°C

VB20150S-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,768

150V

20A

1.43V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 150V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

RF101LAM4STFTR

Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDTM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고7,326

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 400 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

BAT54W-HG3-18

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

패키지: -

재고993

30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SOD-123

125°C

S1KL

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고43,011

800 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.8 µs

5 µA @ 800 V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

PG602R_R2_00001

Panjit International Inc.

DIODE GEN PURP 200V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

200 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 200 V

300pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

V7NM153-M3-H

Vishay General Semiconductor - Diodes Division

7A, 150V, DFN3820A TRENCH SKY RE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

150 V

2A

980 mV @ 7 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 150 V

390pF @ 4V, 1MHz

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-40°C ~ 175°C

SB10100

SMC Diode Solutions

100V, 10A, DO-201AD, DIODE SCHOT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고102

100 V

10A

850 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 100 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

UG5JH

Taiwan Semiconductor Corporation

20NS, 5A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

600 V

5A

3 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

30 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

ST3545AX-C

SMC Diode Solutions

TRENCH SCHOTTKY DIODE 45V 35A R-

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-7, Axial
Supplier Device Package: R-7
Operating Temperature - Junction: -

패키지: -

재고4,800

-

Through Hole

R-7, Axial

R-7

-

SBRD8320G

onsemi

DIODE SCHOTTKY 20V 3A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

20 V

3A

600 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 20 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-65°C ~ 175°C

ERT2GAFC_R1_00001

Panjit International Inc.

DIODE GEN PURP 400V 2A SMAF-C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고4,362

400 V

2A

1.25 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 400 V

25pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF-C

-55°C ~ 150°C

RR268MM-600TR

Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDU

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고22,920

400 V

1A

980 mV @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

CGRAT103-HF

Comchip Technology

DIODE GENERAL PURPOSE 2010 SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

R6001030XXYA

Powerex Inc.

DIODE GP 2.6KV 300A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2600 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 800 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13 µs
Current - Reverse Leakage @ Vr: 50 mA @ 2600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

2600 V

300A

1.4 V @ 800 A

Standard Recovery >500ns, > 200mA (Io)

13 µs

50 mA @ 2600 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 150°C