페이지 760 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
EGP10G-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고2,192	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
MA27D290GL	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 120µA @ 30V Capacitance @ Vr, F: 9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SSSMini2-F3 Operating Temperature - Junction: 125°C (Max)	패키지: 2-SMD, Flat Lead	재고1,228,008	30V	100mA	420mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1ns	120µA @ 30V	9pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	SSSMini2-F3	125°C (Max)
1N4934RL	ON Semiconductor	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,288	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
8EWF06S	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고157,140	600V	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 150°C
VS-SD500N45MSC	Vishay Semiconductor Diodes Division	MOD DIODE 560A 4500V B-PUK Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고6,272	-	-	-	-	-	-	-	-	-	-	-
ISOPAC0223	Semtech Corporation	DIODE GEN PURP 500V 10A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고6,704	500V	10A	1.6V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	-	-	-	-	-55°C ~ 150°C
FR40JR02	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고7,936	600V	40A	1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
VBT5200-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 5A 200V TO-263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,256	200V	5A	1.6V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
SBR5E60P5-7	Diodes Incorporated	DIODE SBR 60V 5A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 220µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고4,880	60V	5A	520mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	220µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
SK310B M4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,472	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CDBF00340-HF	Comchip Technology	DIODE SCHOTTKY 40V 30MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 40V Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	패키지: 1005 (2512 Metric)	재고3,824	40V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 40V	1.5pF @ 1V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
SMMBD914LT3G	ON Semiconductor	DIODE GEN PURP 100V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-236-3, SC-59, SOT-23-3	재고4,112	100V	200mA (DC)	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
VS-85HFR80	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고6,752	800V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
STTH1512GY-TR	STMicroelectronics	DIODE GEN PURP 1.2KV 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 105ns Current - Reverse Leakage @ Vr: 15µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고12,456	1200V	15A	1.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	105ns	15µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
MBR1645	SMC Diode Solutions	DIODE SCHOTTKY 45V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고21,144	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	1400pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
PDS760-13	Diodes Incorporated	DIODE SCHOTTKY 60V 7A POWERDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 620mV @ 7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: PowerDI? 5	재고1,307,040	60V	7A	620mV @ 7A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
MURS320-E3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AB, SMC	재고280,800	200V	3A	875mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
RF505TF6SFHC9	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	패키지: -	재고2,781	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)
R20450	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN1N6910UTK2CS-TR	Microchip Technology	DIODE SCHOTTKY 15V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	15 V	25A	520 mV @ 25 A	No Recovery Time > 500mA (Io)	-	1.2 mA @ 15 V	2000pF @ 5V, 1MHz	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 150°C
S2MA	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,981	1000 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1000 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
E3D08065G	Wolfspeed, Inc.	DIODE SIL CARB 650V 22A TO263-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 51 µA @ 650 V Capacitance @ Vr, F: 369pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	650 V	22A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	51 µA @ 650 V	369pF @ 0V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
S4260	Microchip Technology	DIODE GEN PURP 600V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	600 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 600 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
PCDD0665G1_L2_00001	Panjit International Inc.	DIODE SIL CARB 650V 6A TO252AA Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 228pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고8,988	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
CGRC305-HF	Comchip Technology	DIODE GEN PURP 600V 3A DO214AB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	150°C
R3680	Microchip Technology	DIODE GEN PURP 800V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 25 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	800 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	25 µA @ 800 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-55°C ~ 175°C
SK35AH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	3A	720 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 50 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2DA	Good-Ark Semiconductor	RECTIFIER, ULTRA-FAST/HIGH EFFIC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고44,982	200 V	1.5A	1 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

EGP10G-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고2,192

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

MA27D290GL

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 120µA @ 30V
Capacitance @ Vr, F: 9pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SSSMini2-F3
Operating Temperature - Junction: 125°C (Max)

패키지: 2-SMD, Flat Lead

재고1,228,008

30V

100mA

420mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1ns

120µA @ 30V

9pF @ 0V, 1MHz

Surface Mount

2-SMD, Flat Lead

SSSMini2-F3

125°C (Max)

1N4934RL

ON Semiconductor

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,288

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 100V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

8EWF06S

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고157,140

600V

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

100µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-40°C ~ 150°C

VS-SD500N45MSC

Vishay Semiconductor Diodes Division

MOD DIODE 560A 4500V B-PUK

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고6,272

-

ISOPAC0223

Semtech Corporation

DIODE GEN PURP 500V 10A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고6,704

500V

10A

1.6V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 500V

-

-55°C ~ 150°C

FR40JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고7,936

600V

40A

1V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

VBT5200-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 200V TO-263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,256

200V

5A

1.6V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

SBR5E60P5-7

Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 220µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고4,880

60V

5A

520mV @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

220µA @ 60V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

SK310B M4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,472

100V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CDBF00340-HF

Comchip Technology

DIODE SCHOTTKY 40V 30MA 1005

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 40V
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

패키지: 1005 (2512 Metric)

재고3,824

40V

30mA

370mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 40V

1.5pF @ 1V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

SMMBD914LT3G

ON Semiconductor

DIODE GEN PURP 100V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-236-3, SC-59, SOT-23-3

재고4,112

100V

200mA (DC)

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

VS-85HFR80

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 85A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고6,752

800V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 800V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 180°C

STTH1512GY-TR

STMicroelectronics

DIODE GEN PURP 1.2KV 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105ns
Current - Reverse Leakage @ Vr: 15µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고12,456

1200V

15A

1.9V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

105ns

15µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

MBR1645

SMC Diode Solutions

DIODE SCHOTTKY 45V 16A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고21,144

45V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

1400pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

PDS760-13

Diodes Incorporated

DIODE SCHOTTKY 60V 7A POWERDI5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: PowerDI? 5

재고1,307,040

60V

7A

620mV @ 7A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

MURS320-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AB, SMC

재고280,800

200V

3A

875mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-65°C ~ 175°C

RF505TF6SFHC9

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

패키지: -

재고2,781

600 V

5A

1.7 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

10 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack

TO-220NFM

150°C (Max)

R20450

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

JAN1N6910UTK2CS-TR

Microchip Technology

DIODE SCHOTTKY 15V 25A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

15 V

25A

520 mV @ 25 A

No Recovery Time > 500mA (Io)

-

1.2 mA @ 15 V

2000pF @ 5V, 1MHz

Surface Mount

ThinKey™2

-65°C ~ 150°C

S2MA

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,981

1000 V

1.5A

1.1 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

5 µA @ 1000 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

E3D08065G

Wolfspeed, Inc.

DIODE SIL CARB 650V 22A TO263-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 22A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

650 V

22A

1.8 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

51 µA @ 650 V

369pF @ 0V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263-2

-55°C ~ 175°C

S4260

Microchip Technology

DIODE GEN PURP 600V 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

600 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 600 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

PCDD0665G1_L2_00001

Panjit International Inc.

DIODE SIL CARB 650V 6A TO252AA

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고8,988

650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

228pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

CGRC305-HF

Comchip Technology

DIODE GEN PURP 600V 3A DO214AB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

600 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

150°C

R3680

Microchip Technology

DIODE GEN PURP 800V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 25 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

800 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

25 µA @ 800 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-55°C ~ 175°C

SK35AH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

3A

720 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 50 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

HS2DA

Good-Ark Semiconductor

RECTIFIER, ULTRA-FAST/HIGH EFFIC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고44,982

200 V

1.5A

1 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C