페이지 776 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4007GPE-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,264	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
VS-8EWF02STRPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,072	-	8A	1.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	-	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
R9G00218XX	Powerex Inc.	DIODE MODULE 200V 1800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	패키지: DO-200AB, B-PUK	재고3,728	200V	1800A	1.2V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 200V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-150KS60	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 150A B42 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-42 Supplier Device Package: B-42 Operating Temperature - Junction: -40°C ~ 200°C	패키지: B-42	재고3,920	600V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 600V	-	Chassis, Stud Mount	B-42	B-42	-40°C ~ 200°C
MUR2520R	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 25A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,824	200V	25A	1V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
1N4384GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고6,000	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
SF2L8GHR0G	TSC America Inc.	DIODE, SUPER FAST, 2A, 600V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고5,680	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR152G R0G	TSC America Inc.	DIODE, FAST, 1.5A, 100V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고7,072	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HS1DL M2G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고6,816	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDL RTG	TSC America Inc.	DIODE, FAST, 0.5A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고4,176	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL MQG	TSC America Inc.	DIODE, FAST, 0.8A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고2,816	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RFUH30TS6SGC11	Rohm Semiconductor	DIODE SUPER FAST 600V 15A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Operating Temperature - Junction: 150°C (Max)	패키지: TO-247-3	재고10,680	600V	15A	2.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	TO-247-3	TO-247	150°C (Max)
BYV26C-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고7,152,060	600V	1A	2.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
JANTX1N6638US	Aeroflex Metelics, Division of MACOM	DIODE SW 125V 300MA D5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5ns Current - Reverse Leakage @ Vr: 100µA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, D	재고8,172	125V	300mA (DC)	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5ns	100µA @ 125V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
ZLLS2000QTC	Diodes Incorporated	DIODE SCHOTTKY 40V 2.2A SOT26 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2.2A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 40 µA @ 30 V Capacitance @ Vr, F: 65pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26 Operating Temperature - Junction: 150°C	패키지: -	Request a Quote	40 V	2.2A	540 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	40 µA @ 30 V	65pF @ 30V, 1MHz	Surface Mount	SOT-23-6	SOT-26	150°C
NTE5862	NTE Electronics, Inc	DIODE GEN PURP 600V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 19 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
SD125SCU100A-T1	SMC Diode Solutions	DIODE SCHOTTKY 100V 15A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350 µA @ 100 V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 200°C	패키지: -	Request a Quote	100 V	15A	840 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 100 V	600pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 200°C
HERA806GH	Taiwan Semiconductor Corporation	80NS, 8A, 600V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
ES3DV-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR310S	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고9,000	100 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
PU2JFS	Taiwan Semiconductor Corporation	25NS, 2A, 600V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: 22pF @ 4A, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고84,000	600 V	2A	1.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	2 µA @ 600 V	22pF @ 4A, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
1N4148WS-7-G	Diodes Incorporated	DIODE GEN PURP 75V 150MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
PCFFS08120AF	onsemi	DIODE SIL CARBIDE 1.2KV 8A DIE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 175°C (Max)	패키지: -	Request a Quote	1200 V	8A	1.723 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	-	Surface Mount	Die	Die	175°C (Max)
SDT15150VP5-13D	Diodes Incorporated	DIODE SCHOTTKY 150V 15A PDI5 5K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	150 V	15A	1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 150 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-55°C ~ 150°C
MNS1N5806US	Microchip Technology	DIODE GEN PURP 160V 1A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 160 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	160 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C
MB24_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	40 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
JANTXV1N6858-1	Microchip Technology	DIODE SCHOTTKY 50V 75MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	50 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	4.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
VS-150EBU04-N4	Vishay General Semiconductor - Diodes Division	DIODE GP 400V 150A POWIRTAB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: PowerTab® Supplier Device Package: PowerTab® Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	400 V	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 400 V	-	Through Hole	PowerTab®	PowerTab®	-55°C ~ 175°C

1N4007GPE-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,264

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

VS-8EWF02STRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,072

-

8A

1.2V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

R9G00218XX

Powerex Inc.

DIODE MODULE 200V 1800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 150mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

재고3,728

200V

1800A

1.2V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

25µs

150mA @ 200V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-150KS60

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 150A B42

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-42
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C

패키지: B-42

재고3,920

600V

150A

1.33V @ 471A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 600V

-

Chassis, Stud Mount

B-42

-40°C ~ 200°C

MUR2520R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 25A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,824

200V

25A

1V @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

1N4384GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고6,000

400V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 400V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

SF2L8GHR0G

TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고5,680

600V

2A

1.7V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1µA @ 600V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

FR152G R0G

TSC America Inc.

DIODE, FAST, 1.5A, 100V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고7,072

100V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

HS1DL M2G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고6,816

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

20pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RSFDL RTG

TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고4,176

200V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RS1DL MQG

TSC America Inc.

DIODE, FAST, 0.8A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고2,816

200V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RFUH30TS6SGC11

Rohm Semiconductor

DIODE SUPER FAST 600V 15A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Operating Temperature - Junction: 150°C (Max)

패키지: TO-247-3

재고10,680

600V

15A

2.8V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

-

Through Hole

TO-247-3

TO-247

150°C (Max)

BYV26C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고7,152,060

600V

1A

2.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 600V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

JANTX1N6638US

Aeroflex Metelics, Division of MACOM

DIODE SW 125V 300MA D5D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5ns
Current - Reverse Leakage @ Vr: 100µA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, D

재고8,172

125V

300mA (DC)

1.1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

4.5ns

100µA @ 125V

-

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

ZLLS2000QTC

Diodes Incorporated

DIODE SCHOTTKY 40V 2.2A SOT26

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2.2A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 40 µA @ 30 V
Capacitance @ Vr, F: 65pF @ 30V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Operating Temperature - Junction: 150°C

패키지: -

Request a Quote

40 V

2.2A

540 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

40 µA @ 30 V

65pF @ 30V, 1MHz

Surface Mount

SOT-23-6

SOT-26

150°C

NTE5862

NTE Electronics, Inc

DIODE GEN PURP 600V 6A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 19 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

600 V

6A

1.1 V @ 19 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

SD125SCU100A-T1

SMC Diode Solutions

DIODE SCHOTTKY 100V 15A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C

패키지: -

Request a Quote

100 V

15A

840 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

350 µA @ 100 V

600pF @ 5V, 1MHz

Surface Mount

Die

-55°C ~ 200°C

HERA806GH

Taiwan Semiconductor Corporation

80NS, 8A, 600V, HIGH EFFICIENT R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

600 V

8A

1.7 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

10 µA @ 600 V

55pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

ES3DV-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

10 µA @ 200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

MUR310S

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고9,000

100 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 100 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

PU2JFS

Taiwan Semiconductor Corporation

25NS, 2A, 600V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Capacitance @ Vr, F: 22pF @ 4A, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고84,000

600 V

2A

1.5 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

26 ns

2 µA @ 600 V

22pF @ 4A, 1MHz

Surface Mount

SOD-128

-55°C ~ 150°C

1N4148WS-7-G

Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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75 V

150mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

1 µA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

PCFFS08120AF

onsemi

DIODE SIL CARBIDE 1.2KV 8A DIE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)

패키지: -

Request a Quote

1200 V

8A

1.723 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

-

Surface Mount

Die

175°C (Max)

SDT15150VP5-13D

Diodes Incorporated

DIODE SCHOTTKY 150V 15A PDI5 5K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

150 V

15A

1 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 150 V

-

Surface Mount

PowerDI™ 5

-55°C ~ 150°C

MNS1N5806US

Microchip Technology

DIODE GEN PURP 160V 1A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 160 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

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160 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 150 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 175°C

MB24_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

40 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

JANTXV1N6858-1

Microchip Technology

DIODE SCHOTTKY 50V 75MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

50 V

75mA

1 V @ 35 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

4.5pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 150°C

VS-150EBU04-N4

Vishay General Semiconductor - Diodes Division

DIODE GP 400V 150A POWIRTAB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: PowerTab®
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

400 V

150A

1.3 V @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

50 µA @ 400 V

-

Through Hole

PowerTab®

-55°C ~ 175°C