페이지 850 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ES1BHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,672	100V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ZLLS400TC	Diodes Incorporated	DIODE SCHOTTKY 40V 520MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 520mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 15pF @ 30V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	패키지: SC-76, SOD-323	재고3,872	40V	520mA (DC)	500mV @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	3ns	10µA @ 30V	15pF @ 30V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
A399PD	Powerex Inc.	DIODE FAST 400A 1400V DO-200AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,648	-	-	-	-	-	-	-	-	-	-	-
SM75F	Semtech Corporation	DIODE GEN PURP 7.5KV 290MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 7500V Current - Average Rectified (Io): 290mA Voltage - Forward (Vf) (Max) @ If: 12V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 1µA @ 7500V Capacitance @ Vr, F: 3pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: Axial	재고6,768	7500V	290mA	12V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 7500V	3pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
SF2001GHC0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 50V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고6,464	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
AU2PK-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.3A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 29pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고4,608	800V	1.3A (DC)	2.5V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	29pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
S15MC M6G	TSC America Inc.	DIODE, 15A, 1000V, DO-214AB (SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 93pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고3,840	-	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SR309 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고2,032	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK315BTR	SMC Diode Solutions	DIODE SCHOTTKY 150V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 890mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: 100pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고6,288	150V	3A	890mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 150V	100pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
1T7G A0G	TSC America Inc.	DIODE, 1A, 1000V, TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고2,912	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
BAV5005LP-7B	Diodes Incorporated	HIVOLT SWITCHING DIODE BVR > 100 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 240V Capacitance @ Vr, F: 0.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -55°C ~ 150°C	패키지: 2-UFDFN	재고2,256	400V	300mA (DC)	1.5V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 240V	0.9pF @ 0V, 1MHz	Surface Mount	2-UFDFN	X1-DFN1006-2	-55°C ~ 150°C
GP2D020A060B	Global Power Technologies Group	SCHOTTKY DIODE 600V 20A TO-247-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 58A (DC) Voltage - Forward (Vf) (Max) @ If: 1.65V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 600V Capacitance @ Vr, F: 1054pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -50°C ~ 175°C	패키지: TO-247-2	재고5,632	600V	58A (DC)	1.65V @ 20A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	1054pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-50°C ~ 175°C
RFVS8TG6SGC9	Rohm Semiconductor	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-2	재고20,628	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220ACFP	150°C (Max)
MBR8045R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 45V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AB, DO-5, Stud	재고5,952	45V	80A	650mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
RFUS20NS6STL	Rohm Semiconductor	DIODE GEN PURP 600V 20A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고21,876	600V	20A	2.8V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS	150°C (Max)
UFM14PL-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C	패키지: SOD-123F	재고240,000	400V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 150°C
MUR2100EG	ON Semiconductor	DIODE GEN PURP 1KV 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고75,096	1000V	2A	2.2V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	10µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
1N5822-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-201AD, Axial	재고51,096	40V	3A	525mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
BAV21W_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고138,273	200 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
CRG05-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 1A S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고2,904	800 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
V1FM10-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 1A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	Request a Quote	100 V	1A	770 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	95pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C
V8P103HM3-H	Vishay	8A, 100V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450 µA @ 100 V Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	100 V	3.6A	690 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	450 µA @ 100 V	1150pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
10A06-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	10A	1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
RL206GP-TP	Micro Commercial Co	DIODE GEN PURP 800V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	2A	1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
ES2GA	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고44,952	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SRA10150	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	150 V	10A	950 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
HER104S-AP	Micro Commercial Co	DIODE GEN PURP 300V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 mA @ 300 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	300 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 mA @ 300 V	20pF @ 4V, 1MHz	Through Hole	Axial	A-405	-55°C ~ 125°C
SRA1690H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	90 V	16A	920 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C

ES1BHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,672

100V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 100V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

ZLLS400TC

Diodes Incorporated

DIODE SCHOTTKY 40V 520MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 520mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 10µA @ 30V
Capacitance @ Vr, F: 15pF @ 30V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

재고3,872

40V

520mA (DC)

500mV @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

3ns

10µA @ 30V

15pF @ 30V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

A399PD

Powerex Inc.

DIODE FAST 400A 1400V DO-200AA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,648

-

SM75F

Semtech Corporation

DIODE GEN PURP 7.5KV 290MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 7500V
Current - Average Rectified (Io): 290mA
Voltage - Forward (Vf) (Max) @ If: 12V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 1µA @ 7500V
Capacitance @ Vr, F: 3pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: Axial

재고6,768

7500V

290mA

12V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

300ns

1µA @ 7500V

3pF @ 5V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

SF2001GHC0G

TSC America Inc.

DIODE, SUPER FAST, 20A, 50V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고6,464

50V

20A

975mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

80pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

AU2PK-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.3A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고4,608

800V

1.3A (DC)

2.5V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

29pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

S15MC M6G

TSC America Inc.

DIODE, 15A, 1000V, DO-214AB (SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고3,840

-

15A

1.1V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 1000V

93pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SR309 B0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고2,032

90V

3A

850mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SK315BTR

SMC Diode Solutions

DIODE SCHOTTKY 150V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Capacitance @ Vr, F: 100pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고6,288

150V

3A

890mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 150V

100pF @ 5V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

1T7G A0G

TSC America Inc.

DIODE, 1A, 1000V, TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고2,912

-

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

BAV5005LP-7B

Diodes Incorporated

HIVOLT SWITCHING DIODE BVR > 100

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 240V
Capacitance @ Vr, F: 0.9pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C

패키지: 2-UFDFN

재고2,256

400V

300mA (DC)

1.5V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 240V

0.9pF @ 0V, 1MHz

Surface Mount

2-UFDFN

X1-DFN1006-2

-55°C ~ 150°C

GP2D020A060B

Global Power Technologies Group

SCHOTTKY DIODE 600V 20A TO-247-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 58A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 600V
Capacitance @ Vr, F: 1054pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -50°C ~ 175°C

패키지: TO-247-2

재고5,632

600V

58A (DC)

1.65V @ 20A

No Recovery Time > 500mA (Io)

0ns

70µA @ 600V

1054pF @ 1V, 1MHz

Through Hole

TO-247-2

-50°C ~ 175°C

RFVS8TG6SGC9

Rohm Semiconductor

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-2

재고20,628

600V

8A

3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220ACFP

150°C (Max)

MBR8045R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

재고5,952

45V

80A

650mV @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 150°C

RFUS20NS6STL

Rohm Semiconductor

DIODE GEN PURP 600V 20A LPDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고21,876

600V

20A

2.8V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

LPDS

150°C (Max)

UFM14PL-TP

Micro Commercial Co

DIODE GEN PURP 400V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SOD-123F

재고240,000

400V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

20pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-65°C ~ 150°C

MUR2100EG

ON Semiconductor

DIODE GEN PURP 1KV 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고75,096

1000V

2A

2.2V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

10µA @ 1000V

-

Through Hole

DO-204AL, DO-41, Axial

Axial

-65°C ~ 175°C

1N5822-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-201AD, Axial

재고51,096

40V

3A

525mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

200pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

BAV21W_R1_00001

Panjit International Inc.

DIODE GEN PURP 200V 200MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고138,273

200 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

CRG05-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고2,904

800 V

1A

1.2 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

-

Surface Mount

SOD-123F

S-FLAT (1.6x3.5)

-40°C ~ 150°C

V1FM10-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

Request a Quote

100 V

1A

770 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

95pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-40°C ~ 175°C

V8P103HM3-H

Vishay

8A, 100V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 450 µA @ 100 V
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

100 V

3.6A

690 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

450 µA @ 100 V

1150pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

10A06-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

10A

1 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

150pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

RL206GP-TP

Micro Commercial Co

DIODE GEN PURP 800V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

2A

1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

ES2GA

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고44,952

400 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SRA10150

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

150 V

10A

950 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 150 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

HER104S-AP

Micro Commercial Co

DIODE GEN PURP 300V 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 mA @ 300 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

300 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 mA @ 300 V

20pF @ 4V, 1MHz

Through Hole

Axial

A-405

-55°C ~ 125°C

SRA1690H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 16A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

90 V

16A

920 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 90 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C