페이지 861 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CEFA105-G	Comchip Technology	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고2,100	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
30CPF02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-3	재고5,728	200V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
VS-VSKE91/04	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 100A ADDAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: ADD-A-PAK (3) Supplier Device Package: ADD-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	패키지: ADD-A-PAK (3)	재고6,544	400V	100A	-	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 400V	-	Chassis Mount	ADD-A-PAK (3)	ADD-A-PAK?	-40°C ~ 150°C
1N6078	Microsemi Corporation	DIODE GEN PURP 150V 1.3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1.3A Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 155°C	패키지: A, Axial	재고4,256	150V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	A, Axial	-	-65°C ~ 155°C
67SPB020A	SMC Diode Solutions	DIODE SCHOTTKY 20V 60A SPD-2A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 480mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 20V Capacitance @ Vr, F: 4050pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SPD-2A Supplier Device Package: SPD-2A Operating Temperature - Junction: -55°C ~ 150°C	패키지: SPD-2A	재고5,824	20V	60A	480mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	6mA @ 20V	4050pF @ 5V, 1MHz	Surface Mount	SPD-2A	SPD-2A	-55°C ~ 150°C
S16D	GeneSiC Semiconductor	DIODE GEN PURP 200V 16A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AA, DO-4, Stud	재고7,312	200V	16A	1.1V @ 16A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	-	-65°C ~ 175°C
VS-10WQ045FNHM3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 45V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,920	45V	10A	630mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 175°C
SR805 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-201AD, Axial	재고4,400	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR804 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-201AD, Axial	재고6,272	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SE20AFGHM3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1.3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-221AC, SMA Flat Leads	재고7,552	400V	1.3A (DC)	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
RSFGL MHG	TSC America Inc.	DIODE, FAST, 0.5A, 400V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고5,776	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
MURS360T3G	ON Semiconductor	DIODE GEN PURP 600V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AB, SMC	재고2,312,760	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
ES2J-LTP	Micro Commercial Co	DIODE GEN PURP 600V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AC, SMA	재고5,168	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
CDBMT240-HF	Comchip Technology	DIODE SCHOTTKY 40V 2A SOD123H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 125°C	패키지: SOD-123H	재고2,000	40V	2A (DC)	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	160pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 125°C
TSF2080C-C0G	Taiwan Semiconductor Corporation	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VSSAF56HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 60 V Capacitance @ Vr, F: 540pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고41,928	60 V	5A	620 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 60 V	540pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
ES2LDH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	200 V	2A	940 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SDUR15Q60	SMC Diode Solutions	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고2,763	600 V	15A	2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	20 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
GP3D005A120C	SemiQ	DIODE SCHOTTKY 1.2KV 5A DPAK-2 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CD5194	Microchip Technology	DIODE GEN PURP 80V 200MA DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 80 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	80 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 80 V	-	Surface Mount	Die	Die	-65°C ~ 175°C
CDLL5818-TR	Microchip Technology	DIODE SCHOTTKY 30V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-65°C ~ 150°C
BAS16HT1	onsemi	DIODE SWITCH 200MA 75V SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -	패키지: -	Request a Quote	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-
BA159GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고30,000	1000 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RFN2L6SDDTE25	Rohm Semiconductor	DIODE GEN PURP 600V 1.5A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	패키지: -	재고3,957	600 V	1.5A	1.55 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
PDS4150-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 810 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	4A	810 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 175°C
SD5145	Microchip Technology	DIODE SCHOTTKY 45V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	45 V	60A	700 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
SF54-TP	Micro Commercial Co	DIODE GEN PURP 200V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	45pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MER2DMA-AU_R2_006A1	Panjit International Inc.	DIODE GEN PURP 200V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고44,229	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 175°C

CEFA105-G

Comchip Technology

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고2,100

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 600V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

150°C (Max)

30CPF02

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-3

재고5,728

200V

30A

1.41V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 200V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

VS-VSKE91/04

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 100A ADDAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3)
Supplier Device Package: ADD-A-PAK?
Operating Temperature - Junction: -40°C ~ 150°C

패키지: ADD-A-PAK (3)

재고6,544

400V

100A

-

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 400V

-

Chassis Mount

ADD-A-PAK (3)

ADD-A-PAK?

-40°C ~ 150°C

1N6078

Microsemi Corporation

DIODE GEN PURP 150V 1.3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1.3A
Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 155°C

패키지: A, Axial

재고4,256

150V

1.3A

1.76V @ 18.8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

-

Through Hole

A, Axial

-

-65°C ~ 155°C

67SPB020A

SMC Diode Solutions

DIODE SCHOTTKY 20V 60A SPD-2A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6mA @ 20V
Capacitance @ Vr, F: 4050pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SPD-2A
Supplier Device Package: SPD-2A
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SPD-2A

재고5,824

20V

60A

480mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

6mA @ 20V

4050pF @ 5V, 1MHz

Surface Mount

SPD-2A

-55°C ~ 150°C

S16D

GeneSiC Semiconductor

DIODE GEN PURP 200V 16A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AA, DO-4, Stud

재고7,312

200V

16A

1.1V @ 16A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-65°C ~ 175°C

VS-10WQ045FNHM3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 45V DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,920

45V

10A

630mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-40°C ~ 175°C

SR805 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

재고4,400

50V

8A

700mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SR804 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-201AD, Axial

재고6,272

40V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SE20AFGHM3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.3A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-221AC, SMA Flat Leads

재고7,552

400V

1.3A (DC)

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.2µs

5µA @ 400V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 175°C

RSFGL MHG

TSC America Inc.

DIODE, FAST, 0.5A, 400V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고5,776

400V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

MURS360T3G

ON Semiconductor

DIODE GEN PURP 600V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AB, SMC

재고2,312,760

600V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 600V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

ES2J-LTP

Micro Commercial Co

DIODE GEN PURP 600V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AC, SMA

재고5,168

600V

2A

1.7V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 175°C

CDBMT240-HF

Comchip Technology

DIODE SCHOTTKY 40V 2A SOD123H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SOD-123H

재고2,000

40V

2A (DC)

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

160pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 125°C

TSF2080C-C0G

Taiwan Semiconductor Corporation

DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

VSSAF56HM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 5A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Capacitance @ Vr, F: 540pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고41,928

60 V

5A

620 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 60 V

540pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

ES2LDH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

200 V

2A

940 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SDUR15Q60

SMC Diode Solutions

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고2,763

600 V

15A

2 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

20 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

GP3D005A120C

SemiQ

DIODE SCHOTTKY 1.2KV 5A DPAK-2

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

CD5194

Microchip Technology

DIODE GEN PURP 80V 200MA DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 nA @ 80 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

80 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

25 nA @ 80 V

-

Surface Mount

Die

-65°C ~ 175°C

CDLL5818-TR

Microchip Technology

DIODE SCHOTTKY 30V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

30 V

1A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

0.9pF @ 5V, 1MHz

Surface Mount

DO-213AB, MELF

DO-213AB

-65°C ~ 150°C

BAS16HT1

onsemi

DIODE SWITCH 200MA 75V SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -

패키지: -

Request a Quote

75 V

200mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

6 ns

1 µA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-

BA159GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고30,000

1000 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

RFN2L6SDDTE25

Rohm Semiconductor

DIODE GEN PURP 600V 1.5A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C

패키지: -

재고3,957

600 V

1.5A

1.55 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 600 V

-

Surface Mount

DO-214AC, SMA

PMDS

150°C

PDS4150-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

4A

810 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 150 V

-

Surface Mount

PowerDI™ 5

-65°C ~ 175°C

SD5145

Microchip Technology

DIODE SCHOTTKY 45V 60A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 60 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

45 V

60A

700 mV @ 60 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C

SF54-TP

Micro Commercial Co

DIODE GEN PURP 200V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

5A

950 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

45pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

MER2DMA-AU_R2_006A1

Panjit International Inc.

DIODE GEN PURP 200V 2A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고44,229

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 175°C