페이지 878 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4005GL BK	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고6,048	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
JANTXV1N3671A	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,472	800V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
GL34B-TP	Micro Commercial Co	DIODE GEN 100V 500MA MINI MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AC, MINI-MELF, SOD-80	재고2,944	100V	500mA	1.2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	-	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
M1MA152AT1	ON Semiconductor	DIODE GEN PURP 80V 100MA SC59 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고108,000	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	150°C (Max)
VS-86HFR40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고7,568	400V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
1N4004 TR	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고2,288	400V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
CD214B-B320LF	Bourns Inc.	DIODE SCHOTTKY 20V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AA, SMB	재고2,048	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	250pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
NRVBAF440T3G	ON Semiconductor	DIODE SCHOTTKY 4A 40V SMA-FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 435mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA-FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고7,488	40V	4A	435mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	15mA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA-FL	-55°C ~ 150°C
BYG10J/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고3,968	600V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 600V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1FL RFG	TSC America Inc.	DIODE, SUPER FAST, 1A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,296	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
2A04GHA0G	TSC America Inc.	DIODE, 2A, 400V, AEC-Q101, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고5,488	400V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
BAT42 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AH, DO-35, Axial	재고6,384	30V	200mA	650mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 25V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
V20PW45HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 20A 45V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 610mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 45V Capacitance @ Vr, F: 3000pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,968	45V	20A	610mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 45V	3000pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
PMEG4015EPK,315	Nexperia USA Inc.	DIODE SCHOTTKY 40V 1.5A 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 90pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max)	패키지: 2-XDFN	재고5,312	40V	1.5A	610mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 10V	90pF @ 1V, 1MHz	Surface Mount	2-XDFN	DFN1608D-2	150°C (Max)
VF30100S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 30A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-3 Full Pack, Isolated Tab	재고3,328	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-40°C ~ 150°C
RB520S-30L2-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 100MA 2TDFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 2-DFN1006 Operating Temperature - Junction: 125°C (Max)	패키지: 0402 (1006 Metric)	재고3,920	30V	100mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 10V	-	Surface Mount	0402 (1006 Metric)	2-DFN1006	125°C (Max)
SJPL-F4VR	Sanken	DIODE GEN PURP 400V 1.5A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	패키지: 2-SMD, J-Lead	재고55,164	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
BAS45AL,115	Nexperia USA Inc.	DIODE GEN PURP 125V 250MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C Operating Temperature - Junction: 175°C (Max)	패키지: DO-213AC, MINI-MELF, SOD-80	재고120,264	125V	250mA (DC)	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1nA @ 125V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80C	175°C (Max)
DFLS130L-7	Diodes Incorporated	DIODE SCHOTTKY 30V 1A POWERDI123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 310mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 76pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -40°C ~ 125°C	패키지: POWERDI?123	재고42,000	30V	1A	310mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	76pF @ 10V, 1MHz	Surface Mount	POWERDI?123	PowerDI? 123	-40°C ~ 125°C
IDDD08G65C6XTMA1	Infineon Technologies	DIODE SIL CARB 650V 24A HDSOP-10 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 24A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 27 µA @ 420 V Capacitance @ Vr, F: 401pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고6,900	650 V	24A	-	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
JANTXV1N5618US-TR	Microchip Technology	DIODE GEN PURP 600V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
MBRF1045HE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	45 V	10A	840 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
RS2BH	Taiwan Semiconductor Corporation	150NS, 2A, 100V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000	100 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
2A07G-A52	Diodes Incorporated	DIODE GEN PURP 1KV 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	1000 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 175°C
NRVBA2H100T3G-VF01	onsemi	DIODE SCHOTTKY 100V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	100 V	2A	790 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
S8KL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	150pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
JAN1N5774	Microchip Technology	DIODE GEN PURP 300MA 14CFLATPACK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 100 nA @ 40 V Capacitance @ Vr, F: 8pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 14-CFlatPack Supplier Device Package: 14-CFlatPack Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	-	300mA	1.5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	100 nA @ 40 V	8pF @ 0V, 1MHz	Surface Mount	14-CFlatPack	14-CFlatPack	-65°C ~ 150°C
FR503GP-AP	Micro Commercial Co	DIODE GEN PURP 200V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 200 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

1N4005GL BK

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고6,048

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

JANTXV1N3671A

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,472

800V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

GL34B-TP

Micro Commercial Co

DIODE GEN 100V 500MA MINI MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AC, MINI-MELF, SOD-80

재고2,944

100V

500mA

1.2V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

-

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-65°C ~ 175°C

M1MA152AT1

ON Semiconductor

DIODE GEN PURP 80V 100MA SC59

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고108,000

80V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

150°C (Max)

VS-86HFR40

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 85A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고7,568

400V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 180°C

1N4004 TR

Central Semiconductor Corp

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고2,288

400V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

CD214B-B320LF

Bourns Inc.

DIODE SCHOTTKY 20V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AA, SMB

재고2,048

20V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

250pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

NRVBAF440T3G

ON Semiconductor

DIODE SCHOTTKY 4A 40V SMA-FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 435mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA-FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고7,488

40V

4A

435mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

-

15mA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA-FL

-55°C ~ 150°C

BYG10J/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고3,968

600V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 600V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

ES1FL RFG

TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,296

300V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

8pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

2A04GHA0G

TSC America Inc.

DIODE, 2A, 400V, AEC-Q101, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고5,488

400V

2A

1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

BAT42 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AH, DO-35, Axial

재고6,384

30V

200mA

650mV @ 50mA

Small Signal =< 200mA (Io), Any Speed

5ns

100nA @ 25V

7pF @ 1V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

V20PW45HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 20A 45V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 45V
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,968

45V

20A

610mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 45V

3000pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 150°C

PMEG4015EPK,315

Nexperia USA Inc.

DIODE SCHOTTKY 40V 1.5A 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)

패키지: 2-XDFN

재고5,312

40V

1.5A

610mV @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

4ns

5µA @ 10V

90pF @ 1V, 1MHz

Surface Mount

2-XDFN

DFN1608D-2

150°C (Max)

VF30100S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 30A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-3 Full Pack, Isolated Tab

재고3,328

100V

30A

910mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-40°C ~ 150°C

RB520S-30L2-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 100MA 2TDFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 2-DFN1006
Operating Temperature - Junction: 125°C (Max)

패키지: 0402 (1006 Metric)

재고3,920

30V

100mA

450mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 10V

-

Surface Mount

0402 (1006 Metric)

2-DFN1006

125°C (Max)

SJPL-F4VR

Sanken

DIODE GEN PURP 400V 1.5A SJP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -40°C ~ 150°C

패키지: 2-SMD, J-Lead

재고55,164

400V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Surface Mount

2-SMD, J-Lead

2-SMD

-40°C ~ 150°C

BAS45AL,115

Nexperia USA Inc.

DIODE GEN PURP 125V 250MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
Operating Temperature - Junction: 175°C (Max)

패키지: DO-213AC, MINI-MELF, SOD-80

재고120,264

125V

250mA (DC)

1V @ 100mA

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1nA @ 125V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80C

175°C (Max)

DFLS130L-7

Diodes Incorporated

DIODE SCHOTTKY 30V 1A POWERDI123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 310mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 76pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -40°C ~ 125°C

패키지: POWERDI?123

재고42,000

30V

1A

310mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

76pF @ 10V, 1MHz

Surface Mount

POWERDI?123

PowerDI? 123

-40°C ~ 125°C

IDDD08G65C6XTMA1

Infineon Technologies

DIODE SIL CARB 650V 24A HDSOP-10

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 24A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고6,900

650 V

24A

-

No Recovery Time > 500mA (Io)

0 ns

27 µA @ 420 V

401pF @ 1V, 1MHz

Surface Mount

10-PowerSOP Module

PG-HDSOP-10-1

-55°C ~ 175°C

JANTXV1N5618US-TR

Microchip Technology

DIODE GEN PURP 600V 1A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

600 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

500 nA @ 600 V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

MBRF1045HE3_A-P

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 10A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

45 V

10A

840 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

RS2BH

Taiwan Semiconductor Corporation

150NS, 2A, 100V, FAST RECOVERY R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고18,000

100 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

2A07G-A52

Diodes Incorporated

DIODE GEN PURP 1KV 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

1000 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 175°C

NRVBA2H100T3G-VF01

onsemi

DIODE SCHOTTKY 100V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

100 V

2A

790 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

8 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 175°C

S8KL-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

8A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

150pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

JAN1N5774

Microchip Technology

DIODE GEN PURP 300MA 14CFLATPACK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 100 nA @ 40 V
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 14-CFlatPack
Supplier Device Package: 14-CFlatPack
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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300mA

1.5 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

100 nA @ 40 V

8pF @ 0V, 1MHz

Surface Mount

14-CFlatPack

-65°C ~ 150°C

FR503GP-AP

Micro Commercial Co

DIODE GEN PURP 200V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

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200 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 200 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C