페이지 887 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S1GHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고510,024	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
EGP10AHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고2,704	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	22pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
FFPF10U150STU	Fairchild/ON Semiconductor	DIODE GEN PURP 1.5KV 10A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 15µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,056	1500V	10A	1.8V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	15µA @ 1500V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
VS-21DQ04TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고5,616	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-40°C ~ 150°C
F1842D1600	Crydom Co.	DIODE MODULE 1.6KV 40A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 120A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	패키지: Module	재고6,288	1600V	40A (DC)	1.4V @ 120A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis Mount	Module	Module	-
RG 1CV	Sanken	DIODE GEN PURP 1KV 700MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 3.3V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 20µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고7,936	1000V	700mA	3.3V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	20µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
VSSAF5N50-M3/6B	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.4mA @ 50V Capacitance @ Vr, F: 850pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: DO-221AC, SMA Flat Leads	재고2,848	50V	3A (DC)	410mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.4mA @ 50V	850pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
SK56BHM4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고5,792	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
1N5617GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AC, DO-15, Axial	재고2,768	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
S2B-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,504	100V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SR003 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고7,184	30V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SS16L MTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,920	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4005E-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고4,736	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1D R3G	TSC America Inc.	DIODE, 1A, 200V, DO-214AC (SMA) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고6,480	200V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RM 4	Sanken	DIODE GEN PURP 400V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고6,032	400V	3A	950mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
HER303-T	Diodes Incorporated	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고19,608	200V	3A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
UF5401GP-AP	Micro Commercial Co	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	75pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS16FH-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323FH Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	SC-90, SOD-323F	SOD-323FH	-55°C ~ 150°C
MUR820H-BP	Micro Commercial Co	RECTIFIERS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	200 V	8A	1.16 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 200 V	95pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SX36-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 60V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,925	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	120pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
MBR320AFC_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 3A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 85pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,493	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	85pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
S3490	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RSFAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 500MA SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고26,880	50 V	500mA	1.3 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BD890YS_S2_00001	Panjit International Inc.	DIODE SCHOTTKY 90V 8A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	90 V	8A	800 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 90 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-65°C ~ 175°C
ND171N16KHPSA1	Infineon Technologies	DIODE GEN PURP 1.6KV 171A PB34-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB34-1 Operating Temperature - Junction: -40°C ~ 135°C	패키지: -	Request a Quote	1600 V	171A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-	Chassis Mount	Module	BG-PB34-1	-40°C ~ 135°C
SD2010S020S2R0	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	20 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
S4G-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고987	400 V	4A	1.15 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N6306R	Microchip Technology	DIODE GEN PURP 150V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 25 µA @ 150 V Capacitance @ Vr, F: 600pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	70A	1.18 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 150 V	600pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C

S1GHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고510,024

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 400V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

EGP10AHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고2,704

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

22pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

FFPF10U150STU

Fairchild/ON Semiconductor

DIODE GEN PURP 1.5KV 10A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 15µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,056

1500V

10A

1.8V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

15µA @ 1500V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

VS-21DQ04TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고5,616

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-40°C ~ 150°C

F1842D1600

Crydom Co.

DIODE MODULE 1.6KV 40A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 120A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -

패키지: Module

재고6,288

1600V

40A (DC)

1.4V @ 120A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis Mount

Module

-

RG 1CV

Sanken

DIODE GEN PURP 1KV 700MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 20µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고7,936

1000V

700mA

3.3V @ 700mA

Fast Recovery =< 500ns, > 200mA (Io)

100ns

20µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

VSSAF5N50-M3/6B

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO221AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 410mV @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.4mA @ 50V
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-221AC, SMA Flat Leads

재고2,848

50V

3A (DC)

410mV @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.4mA @ 50V

850pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

SK56BHM4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고5,792

60V

5A

750mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

1N5617GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

재고2,768

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 400V

25pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

S2B-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,504

100V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 100V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SR003 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고7,184

30V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 125°C

SS16L MTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,920

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 60V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N4005E-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고4,736

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S1D R3G

TSC America Inc.

DIODE, 1A, 200V, DO-214AC (SMA)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고6,480

200V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

1µA @ 200V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

RM 4

Sanken

DIODE GEN PURP 400V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고6,032

400V

3A

950mV @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

Axial

-40°C ~ 150°C

HER303-T

Diodes Incorporated

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고19,608

200V

3A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 200V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

UF5401GP-AP

Micro Commercial Co

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 100 V

75pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SS16FH-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323FH
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

60 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

-

Surface Mount

SC-90, SOD-323F

SOD-323FH

-55°C ~ 150°C

MUR820H-BP

Micro Commercial Co

RECTIFIERS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

200 V

8A

1.16 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 200 V

95pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SX36-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 60V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고2,925

60 V

3A

750 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

120pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

MBR320AFC_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 200V 3A SMAF-C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고8,493

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

85pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF-C

-55°C ~ 150°C

S3490

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-

RSFAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 500MA SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고26,880

50 V

500mA

1.3 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

BD890YS_S2_00001

Panjit International Inc.

DIODE SCHOTTKY 90V 8A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

90 V

8A

800 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 90 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

-65°C ~ 175°C

ND171N16KHPSA1

Infineon Technologies

DIODE GEN PURP 1.6KV 171A PB34-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 171A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB34-1
Operating Temperature - Junction: -40°C ~ 135°C

패키지: -

Request a Quote

1600 V

171A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1600 V

-

Chassis Mount

Module

BG-PB34-1

-40°C ~ 135°C

SD2010S020S2R0

KYOCERA AVX

SCHOTTKY DIODES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

20 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 20 V

-

Surface Mount

1206 (3216 Metric)

1206

-55°C ~ 125°C

S4G-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고987

400 V

4A

1.15 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 400 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

1N6306R

Microchip Technology

DIODE GEN PURP 150V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 25 µA @ 150 V
Capacitance @ Vr, F: 600pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

70A

1.18 V @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

25 µA @ 150 V

600pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C