페이지 902 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 정류기 - 단일

기록 52,788
페이지  902/1,886
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SK110E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO214BA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214BA
재고6,992
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Surface Mount
DO-214BA
DO-214BA
-65°C ~ 175°C
hot FR1D-13-F
Diodes Incorporated

DIODE GEN PURP 200V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고393,600
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
hot 8TQ100S
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,596
100V
8A
720mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
CMR3U-02M BK
Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고5,376
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
NGTD13R120F2WP
ON Semiconductor

DIODE GEN PURP 1.2KV DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 25A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: 175°C (Max)
패키지: Die
재고4,976
1200V
-
2.6V @ 25A
-
-
1µA @ 1200V
-
Surface Mount
Die
Die
175°C (Max)
SFF1603GHC0G
TSC America Inc.

DIODE, SUPER FAST, 16A, 150V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-3 Full Pack, Isolated Tab
재고2,976
150V
16A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
80pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
MS104E3/TR12
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고4,544
40V
1A
690mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
V30DM120-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 6A TO263AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.06V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고7,904
120V
6A
1.06V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 120V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-40°C ~ 175°C
AU2PJHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고4,464
600V
1.6A
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
MUR190AHR0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 900V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 900V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고3,600
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
SS26-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-214AC, SMA
재고7,408
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
F1T5G A1G
TSC America Inc.

DIODE, FAST, 1A, 600V, 250NS, TS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: T-18, Axial
재고4,688
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
S1MLHMHG
TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, SUB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-219AB
재고4,832
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 1000V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
hot RF1005TF6S
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C (Max)
패키지: TO-220-2 Full Pack
재고18,240
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C (Max)
hot VS-18TQ045PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 18A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고34,800
45V
18A
600mV @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.5mA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
hot STPS2H100U
STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-214AA, SMB
재고4,225,980
100V
2A
790mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
-
Surface Mount
DO-214AA, SMB
SMB
175°C (Max)
PMEG4010ER,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 40V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: CFP3
  • Operating Temperature - Junction: 150°C (Max)
패키지: SOD-123W
재고28,722
40V
1A
490mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 40V
130pF @ 1V, 1MHz
Surface Mount
SOD-123W
CFP3
150°C (Max)
1N3973
Solid State Inc.

DIODE GEN PURP 400V 100A DO8

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-8
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: -
Request a Quote
400 V
100A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 400 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-8
-65°C ~ 200°C
SS14F-HF
Comchip Technology

DIODE SCHOTTKY 40V 1A SMAF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 40 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
Request a Quote
40 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 40 V
110pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMAF
-55°C ~ 125°C
MBR20U100L-TP
Micro Commercial Co

DIODE SCHOTTKY 100V 20A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
100 V
20A
700 mV @ 20 A
-
-
100 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 150°C
SB190
Diotec Semiconductor

DIODE SCHOTTKY 90V 1A DO15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: -
Request a Quote
90 V
1A
790 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 90 V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-50°C ~ 150°C
V2PM10LHM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 1.9A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1.9A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 195pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고26,892
100 V
1.9A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
195pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-40°C ~ 175°C
MSASC25H45K-TR
Microchip Technology

DIODE SCHOTTKY 45V 25A THINKEY2

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
45 V
25A
610 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 mA @ 45 V
-
Surface Mount
ThinKey™2
ThinKey™2
-55°C ~ 150°C
ES3DH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고9,000
200 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
GS1GDWG_R1_00001
Panjit International Inc.

DIODE GEN PURP 400V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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400 V
1A
1.1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
1 µA @ 400 V
7pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
FR2K_R1_00001
Panjit International Inc.

DIODE GEN PURP 800V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 800 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: -
재고2,352
800 V
2A
1.3 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
1 µA @ 800 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-50°C ~ 150°C
HER207-AP
Micro Commercial Co

DIODE GEN PURP 800V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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800 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
30pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
UG1DHE3-TP
Micro Commercial Co

RECTIFIERS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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200 V
1A
920 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
2 µA @ 200 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C