페이지 907 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAT6402WH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SCD80-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-80	재고4,640	40V	120mA	750mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	6pF @ 1V, 1MHz	Surface Mount	SC-80	PG-SCD80-2	150°C (Max)
DGS17-03CS	IXYS	DIODE SCHOTTKY 300V 29A TO252AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 29A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23ns Current - Reverse Leakage @ Vr: 250µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,104	300V	29A	1.9V @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	23ns	250µA @ 300V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
D450S20T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER FAST 2000V 651A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,008	-	-	-	-	-	-	-	-	-	-	-
1N5623US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	패키지: SQ-MELF, A	재고4,160	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
V10P20-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 200V 2.4A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고90,000	200V	2.4A	1.34V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 200V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
VI30120S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 120V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-262-3 Long Leads, I2Pak, TO-262AA	재고6,624	120V	30A	1.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
UFS170JE3/TR13	Microsemi Corporation	DIODE GEN PURP 700V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 20µA @ 700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AA, SMB	재고4,112	700V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	20µA @ 700V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 175°C
SF1004GHC0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 200V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고5,984	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
CMR2-10 BK	Central Semiconductor Corp	DIODE GEN PURP 1KV 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고6,512	1000V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 1000V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SS3P4HE3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고3,584	40V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	130pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SNSR20F20NXT5G	ON Semiconductor	DIODE SCHOTTKY 20V 2A 2DSN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: 2-DSN (1.6x.80) Operating Temperature - Junction: 150°C (Max)	패키지: 2-XDFN	재고4,464	20V	2A (DC)	470mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 20V	-	Surface Mount	2-XDFN	2-DSN (1.6x.80)	150°C (Max)
MBR2150VRTR-G1	Diodes Incorporated	DIODE SCHOTTKY DO-214 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고3,296	150V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC	-65°C ~ 150°C
SRT115 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고2,576	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SK25-LTP	Micro Commercial Co	DIODE SCHOTTKY 50V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 50V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AA, SMB	재고7,520	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
S1MLHMQG	TSC America Inc.	DIODE, 1A, 1000V, AEC-Q101, SUB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고5,072	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
BA157G R1G	TSC America Inc.	DIODE, FAST, 1A, 400V, 150NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,608	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
RB162MM-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	패키지: SOD-123F	재고3,776	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
STTH5R06GY-TR	STMicroelectronics	DIODE GEN PURP 600V 5A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,392	600V	5A	3.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
CEFB203-G	Comchip Technology	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AA, SMB	재고6,832	200V	2A	875mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	150°C (Max)
BAS16X-TP	Micro Commercial Co	DIODE GEN PURP 75V 200MA SOD523 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	패키지: SC-79, SOD-523	재고20,460	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
SBR8U60P5-7	Diodes Incorporated	DIODE SBR 60V 8A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	패키지: PowerDI? 5	재고21,870	60V	8A	530mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	600µA @ 60V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
SDT20B60VCTFP	Diodes Incorporated	DIODE SCHOTTKY 60V 10A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB (Type TH) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	60 V	10A	600 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB (Type TH)	-55°C ~ 150°C
SS30100HE-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 100V 3A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고6,294	100 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	160pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SK24L_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고1,164	40 V	2A	450 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
MBR5150_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 150V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	재고2,319	150 V	5A	900 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	150pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
SS8PH9HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 90V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 90 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	90 V	8A	900 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 µA @ 90 V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
BAT400D_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 500MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -40°C ~ 125°C	패키지: -	Request a Quote	40 V	500mA	500 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	170pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-40°C ~ 125°C
V15PM10-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 15A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고22,392	100 V	15A	750 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C

BAT6402WH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SCD80-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-80

재고4,640

40V

120mA

750mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 30V

6pF @ 1V, 1MHz

Surface Mount

SC-80

PG-SCD80-2

150°C (Max)

DGS17-03CS

IXYS

DIODE SCHOTTKY 300V 29A TO252AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 29A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23ns
Current - Reverse Leakage @ Vr: 250µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,104

300V

29A

1.9V @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

23ns

250µA @ 300V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

D450S20T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER FAST 2000V 651A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,008

-

1N5623US

Microsemi Corporation

DIODE GEN PURP 1KV 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

패키지: SQ-MELF, A

재고4,160

1000V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

500nA @ 1000V

15pF @ 12V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

V10P20-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 2.4A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.4A
Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고90,000

200V

2.4A

1.34V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 200V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

VI30120S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

재고6,624

120V

30A

1.1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

UFS170JE3/TR13

Microsemi Corporation

DIODE GEN PURP 700V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 20µA @ 700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

재고4,112

700V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

20µA @ 700V

-

Surface Mount

DO-214AA, SMB

DO-214BA

-55°C ~ 175°C

SF1004GHC0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 200V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고5,984

200V

10A

975mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

70pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

CMR2-10 BK

Central Semiconductor Corp

DIODE GEN PURP 1KV 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고6,512

1000V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 1000V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

SS3P4HE3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고3,584

40V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

130pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

SNSR20F20NXT5G

ON Semiconductor

DIODE SCHOTTKY 20V 2A 2DSN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 470mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)

패키지: 2-XDFN

재고4,464

20V

2A (DC)

470mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 20V

-

Surface Mount

2-XDFN

2-DSN (1.6x.80)

150°C (Max)

MBR2150VRTR-G1

Diodes Incorporated

DIODE SCHOTTKY DO-214

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고3,296

150V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Surface Mount

DO-214AC, SMA

DO-214AC

-65°C ~ 150°C

SRT115 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고2,576

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

SK25-LTP

Micro Commercial Co

DIODE SCHOTTKY 50V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AA, SMB

재고7,520

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 50V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

S1MLHMQG

TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, SUB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고5,072

-

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 1000V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

BA157G R1G

TSC America Inc.

DIODE, FAST, 1A, 400V, 150NS, DO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,608

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

RB162MM-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

재고3,776

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

STTH5R06GY-TR

STMicroelectronics

DIODE GEN PURP 600V 5A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 3.2V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,392

600V

5A

3.2V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

30µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

CEFB203-G

Comchip Technology

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AA, SMB

재고6,832

200V

2A

875mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 200V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

150°C (Max)

BAS16X-TP

Micro Commercial Co

DIODE GEN PURP 75V 200MA SOD523

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-79, SOD-523

재고20,460

75V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

6ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C

SBR8U60P5-7

Diodes Incorporated

DIODE SBR 60V 8A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -65°C ~ 150°C

패키지: PowerDI? 5

재고21,870

60V

8A

530mV @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

600µA @ 60V

-

Surface Mount

PowerDI? 5

-65°C ~ 150°C

SDT20B60VCTFP

Diodes Incorporated

DIODE SCHOTTKY 60V 10A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB (Type TH)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

60 V

10A

600 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB (Type TH)

-55°C ~ 150°C

SS30100HE-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 100V 3A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고6,294

100 V

3A

800 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

160pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

SK24L_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고1,164

40 V

2A

450 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

250 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 125°C

MBR5150_R2_00001

Panjit International Inc.

DIODE SCHOTTKY 150V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

재고2,319

150 V

5A

900 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 150 V

150pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

SS8PH9HM3_A-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 90V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 90 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

90 V

8A

900 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2 µA @ 90 V

140pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

BAT400D_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 40V 500MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -40°C ~ 125°C

패키지: -

Request a Quote

40 V

500mA

500 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 30 V

170pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-40°C ~ 125°C

V15PM10-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 15A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고22,392

100 V

15A

750 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C