페이지 944 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
NS8ATHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2	재고3,376	50V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SS3P3LHM3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고4,576	30V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 30V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SD233N36S50PSC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 3.6KV 235A B8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600V Current - Average Rectified (Io): 235A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 1000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 50mA @ 3600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-8 Supplier Device Package: B-8 Operating Temperature - Junction: -40°C ~ 125°C	패키지: B-8	재고2,688	3600V	235A	3.2V @ 1000A	Standard Recovery >500ns, > 200mA (Io)	5µs	50mA @ 3600V	-	Chassis, Stud Mount	B-8	B-8	-40°C ~ 125°C
DSS20-01AC	IXYS	DIODE SCHOTTKY 100V 20A ISOPLUS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220? Operating Temperature - Junction: -55°C ~ 175°C	패키지: ISOPLUS220?	재고7,696	100V	20A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Through Hole	ISOPLUS220?	ISOPLUS220?	-55°C ~ 175°C
BYT52K-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.4A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고2,208	800V	1.4A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 800V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SBYV27-50-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고4,752	50V	2A	1.07V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S8MC M6G	TSC America Inc.	DIODE, 8A, 1000V, DO-214AB (SMC) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고7,264	-	8A	985mV @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ES2D-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고7,968	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SR205 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고5,360	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
RS1DL RHG	TSC America Inc.	DIODE, FAST, 0.8A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고4,592	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SK56A-LTP	Micro Commercial Co	DIODE SCHOTTKY 5A 60V SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,120	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
IDW75D65D1XKSA1	Infineon Technologies	DIODE GEN PURP 650V 150A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 108ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -40°C ~ 175°C	패키지: TO-247-3	재고13,140	650V	150A (DC)	1.7V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	108ns	40µA @ 650V	-	Through Hole	TO-247-3	PG-TO247-3	-40°C ~ 175°C
SBRT20M80SP5-13	Diodes Incorporated	DIODE SBR 80V 20A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고4,752	80V	20A	660mV @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	200µA @ 80V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
1PS70SB82,115	Nexperia USA Inc.	DIODE SCHOTTKY 15V 30MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 1V Capacitance @ Vr, F: 1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3 Operating Temperature - Junction: 125°C (Max)	패키지: SC-70, SOT-323	재고46,752	15V	30mA (DC)	700mV @ 30mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 1V	1pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323-3	125°C (Max)
BAT6402VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 250MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고130,644	40V	250mA (DC)	750mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	2µA @ 30V	6pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
EGP31C-E3-D	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 150V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 117pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 150 V	117pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
VS-20ATS12HM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 20A TO220-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고2,925	1200 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Through Hole	TO-220-3	TO-220-3	-40°C ~ 150°C
AR1FM-M3-H	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 1KV 1A DO219AB Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고53,679	1000 V	1A	1.6 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	1 µA @ 1000 V	9.3pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
MBRB16H45HE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	45 V	16A	660 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
JAN1N914-TR	Microchip Technology	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	20 ns	500 nA @ 75 V	2.8pF @ 1.5V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 150°C
GP3D010A120A	SemiQ	DIODE SIL CARB 1.2KV 10A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Capacitance @ Vr, F: 608pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고18	1200 V	10A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	608pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
UGF12JD	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고3,000	600 V	12A	3.1 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 600 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 175°C
1N3595-1-TR	Microchip Technology	DIODE GEN PURP 125V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	125 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
GP3D015A120B	SemiQ	DIODE SIL CARB 1.2KV 15A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Capacitance @ Vr, F: 962pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	962pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SK320SMB	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	패키지: -	Request a Quote	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
SK3BB	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, 3A, 100V, D Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고17,565	100 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	100pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
R4220	Microchip Technology	DIODE GEN PURP 200V 125A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	200 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
PU2BLSH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A SOD123HE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고59,850	100 V	2A	930 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	31pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C

NS8ATHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

재고3,376

50V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SS3P3LHM3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고4,576

30V

3A

470mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 30V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

SD233N36S50PSC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 3.6KV 235A B8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3600V
Current - Average Rectified (Io): 235A
Voltage - Forward (Vf) (Max) @ If: 3.2V @ 1000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 50mA @ 3600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-8
Supplier Device Package: B-8
Operating Temperature - Junction: -40°C ~ 125°C

패키지: B-8

재고2,688

3600V

235A

3.2V @ 1000A

Standard Recovery >500ns, > 200mA (Io)

5µs

50mA @ 3600V

-

Chassis, Stud Mount

B-8

-40°C ~ 125°C

DSS20-01AC

IXYS

DIODE SCHOTTKY 100V 20A ISOPLUS

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS220?
Supplier Device Package: ISOPLUS220?
Operating Temperature - Junction: -55°C ~ 175°C

패키지: ISOPLUS220?

재고7,696

100V

20A

800mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 100V

-

Through Hole

ISOPLUS220?

-55°C ~ 175°C

BYT52K-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.4A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고2,208

800V

1.4A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 800V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

SBYV27-50-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고4,752

50V

2A

1.07V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

5µA @ 50V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

S8MC M6G

TSC America Inc.

DIODE, 8A, 1000V, DO-214AB (SMC)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고7,264

-

8A

985mV @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

48pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

ES2D-M3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고7,968

200V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 200V

18pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SR205 A0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고5,360

50V

2A

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

RS1DL RHG

TSC America Inc.

DIODE, FAST, 0.8A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고4,592

200V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SK56A-LTP

Micro Commercial Co

DIODE SCHOTTKY 5A 60V SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,120

60V

5A

750mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

200pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

IDW75D65D1XKSA1

Infineon Technologies

DIODE GEN PURP 650V 150A TO247-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 150A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 108ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-247-3

재고13,140

650V

150A (DC)

1.7V @ 75A

Fast Recovery =< 500ns, > 200mA (Io)

108ns

40µA @ 650V

-

Through Hole

TO-247-3

PG-TO247-3

-40°C ~ 175°C

SBRT20M80SP5-13

Diodes Incorporated

DIODE SBR 80V 20A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고4,752

80V

20A

660mV @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

200µA @ 80V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

1PS70SB82,115

Nexperia USA Inc.

DIODE SCHOTTKY 15V 30MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 30mA (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 1V
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Operating Temperature - Junction: 125°C (Max)

패키지: SC-70, SOT-323

재고46,752

15V

30mA (DC)

700mV @ 30mA

Small Signal =< 200mA (Io), Any Speed

-

200nA @ 1V

1pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323-3

125°C (Max)

BAT6402VH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 250MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고130,644

40V

250mA (DC)

750mV @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

5ns

2µA @ 30V

6pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

EGP31C-E3-D

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 117pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 150 V

117pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

VS-20ATS12HM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 20A TO220-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

재고2,925

1200 V

20A

1.1 V @ 20 A

Standard Recovery >500ns, > 200mA (Io)

-

100 µA @ 1200 V

-

Through Hole

TO-220-3

-40°C ~ 150°C

AR1FM-M3-H

Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1A DO219AB

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고53,679

1000 V

1A

1.6 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

120 ns

1 µA @ 1000 V

9.3pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

MBRB16H45HE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

45 V

16A

660 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 45 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

JAN1N914-TR

Microchip Technology

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

Request a Quote

75 V

200mA

1.2 V @ 50 mA

Small Signal =< 200mA (Io), Any Speed

20 ns

500 nA @ 75 V

2.8pF @ 1.5V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 150°C

GP3D010A120A

SemiQ

DIODE SIL CARB 1.2KV 10A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Capacitance @ Vr, F: 608pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고18

1200 V

10A

1.65 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1200 V

608pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

UGF12JD

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고3,000

600 V

12A

3.1 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

500 nA @ 600 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 175°C

1N3595-1-TR

Microchip Technology

DIODE GEN PURP 125V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

125 V

150mA

1 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

3 µs

1 nA @ 125 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

GP3D015A120B

SemiQ

DIODE SIL CARB 1.2KV 15A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Capacitance @ Vr, F: 962pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1200 V

15A

1.6 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 1200 V

962pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

SK320SMB

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: -

Request a Quote

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 150°C

SK3BB

Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, 3A, 100V, D

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고17,565

100 V

3A

790 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

30 µA @ 100 V

100pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

R4220

Microchip Technology

DIODE GEN PURP 200V 125A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

200 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

PU2BLSH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 2A SOD123HE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고59,850

100 V

2A

930 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 100 V

31pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 175°C