페이지 99 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
HU10260R	Microsemi Corporation	DIODE MODULE 600V 100A HALF-PAK Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 275pF @ 10V, 1Mhz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	패키지: HALF-PAK	재고2,384	600V	100A	1.35V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	50µA @ 600V	275pF @ 10V, 1Mhz	Chassis Mount	HALF-PAK	HALF-PAK	-
SUF30G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 150°C	패키지: P600, Axial	재고5,984	400V	3A	1.8V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Through Hole	P600, Axial	P600	-55°C ~ 150°C
MP740-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	패키지: DO-204AL, DO-41, Axial	재고6,304	400V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
CUS02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: -40°C ~ 150°C	패키지: SC-76, SOD-323	재고5,536	30V	1A	470mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
RS1B-13	Diodes Incorporated	DIODE GEN PURP 100V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고2,912	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
GKR240/04	GeneSiC Semiconductor	DIODE GEN PURP 400V 320A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	패키지: DO-205AB, DO-9, Stud	재고4,528	400V	320A	1.4V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	60mA @ 400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
VS-MBRB1635-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 35V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,928	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 35V	1400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-65°C ~ 150°C
RS3DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE FAST REC 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 44pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고7,504	200V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	44pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
BYX84TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-57, Axial	재고7,280	600V	2A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 600V	20pF @ 4V, 1MHz	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
RS2GAHM2G	TSC America Inc.	DIODE, FAST, 1.5A, 400V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고5,344	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CDBU0245-HF	Comchip Technology	DIODE SCHOTTKY 45V 200MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603C/SOD-523F Operating Temperature - Junction: -40°C ~ 125°C	패키지: 2-SMD, No Lead	재고96,000	45V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	9pF @ 10V, 1MHz	Surface Mount	2-SMD, No Lead	0603C/SOD-523F	-40°C ~ 125°C
ER2ETR	SMC Diode Solutions	DIODE GEN PURP 300V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고3,936	300V	2A	1.25V @ 2A	Standard Recovery >500ns, > 200mA (Io)	35ns	5µA @ 300V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 150°C
BAS85-M-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max)	패키지: DO-213AC, MINI-MELF, SOD-80	재고3,808	30V	200mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
S1DHM2G	TSC America Inc.	DIODE, 1A, 200V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고6,544	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
PMEG3005EGWJ	Nexperia USA Inc.	PMEG4010CEGW/SOD123/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 55pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	패키지: SOD-123	재고3,664	30V	-	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	-	55pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-
RB521S30,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max)	패키지: SC-79, SOD-523	재고48,804	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 10V	25pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
CMSH3-40 TR13	Central Semiconductor Corp	DIODE SCHOTTKY 40V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AB, SMC	재고36,000	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
SR203-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 2A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -50°C ~ 125°C	패키지: DO-204AL, DO-41, Axial	재고52,770	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-50°C ~ 125°C
STPSC10H065BY-TR	STMicroelectronics	DIODE SIL CARBIDE 650V 10A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C	패키지: -	재고21,375	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
SA3L	Rectron USA	DIODE GEN PURP 200V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 200 V	8pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
1N4148WS-AQ	Diotec Semiconductor	SMALL SIGNAL DIODE SOD-323F 100V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,985	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323	-55°C ~ 150°C
EP05Q06	KYOCERA AVX	DIODE SCHOTTKY 60V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	Request a Quote	60 V	500mA	620 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	SOD-123	SOD-123	-40°C ~ 150°C
UF3D_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고4,512	200 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 200 V	75pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
UGF12JDH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고3,000	600 V	12A	3.1 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 600 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 175°C
UES701R	Microchip Technology	DIODE GEN PURP 50V 25A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 20 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	50 V	25A	950 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 50 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-55°C ~ 175°C
ER2E_R1_00001	Panjit International Inc.	DIODE GEN PURP 300V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 300 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,400	300 V	2A	1.25 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
SR305H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	50 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
BAT54GW	Taiwan Semiconductor Corporation	0.1A, 30V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote	30 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C

HU10260R

Microsemi Corporation

DIODE MODULE 600V 100A HALF-PAK

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

패키지: HALF-PAK

재고2,384

600V

100A

1.35V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

50µA @ 600V

275pF @ 10V, 1Mhz

Chassis Mount

HALF-PAK

-

SUF30G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -55°C ~ 150°C

패키지: P600, Axial

재고5,984

400V

3A

1.8V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 400V

-

Through Hole

P600, Axial

P600

-55°C ~ 150°C

MP740-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

재고6,304

400V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

CUS02(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: US-FLAT (1.25x2.5)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: SC-76, SOD-323

재고5,536

30V

1A

470mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

-

Surface Mount

SC-76, SOD-323

US-FLAT (1.25x2.5)

-40°C ~ 150°C

RS1B-13

Diodes Incorporated

DIODE GEN PURP 100V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고2,912

100V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

GKR240/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 320A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 320A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AB, DO-9, Stud

재고4,528

400V

320A

1.4V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

60mA @ 400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

VS-MBRB1635-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,928

35V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 35V

1400pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-65°C ~ 150°C

RS3DHE3_A/I

Vishay Semiconductor Diodes Division

DIODE FAST REC 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고7,504

200V

3A

1.3V @ 2.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 200V

44pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

BYX84TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-57, Axial

재고7,280

600V

2A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 600V

20pF @ 4V, 1MHz

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

RS2GAHM2G

TSC America Inc.

DIODE, FAST, 1.5A, 400V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고5,344

400V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CDBU0245-HF

Comchip Technology

DIODE SCHOTTKY 45V 200MA 0603

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603C/SOD-523F
Operating Temperature - Junction: -40°C ~ 125°C

패키지: 2-SMD, No Lead

재고96,000

45V

200mA

550mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

9pF @ 10V, 1MHz

Surface Mount

2-SMD, No Lead

0603C/SOD-523F

-40°C ~ 125°C

ER2ETR

SMC Diode Solutions

DIODE GEN PURP 300V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고3,936

300V

2A

1.25V @ 2A

Standard Recovery >500ns, > 200mA (Io)

35ns

5µA @ 300V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-65°C ~ 150°C

BAS85-M-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD80

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)

패키지: DO-213AC, MINI-MELF, SOD-80

재고3,808

30V

200mA

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

125°C (Max)

S1DHM2G

TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고6,544

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1µA @ 200V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

PMEG3005EGWJ

Nexperia USA Inc.

PMEG4010CEGW/SOD123/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 55pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -

패키지: SOD-123

재고3,664

30V

-

430mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

55pF @ 1V, 1MHz

Surface Mount

SOD-123

-

RB521S30,115

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)

패키지: SC-79, SOD-523

재고48,804

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 10V

25pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C (Max)

CMSH3-40 TR13

Central Semiconductor Corp

DIODE SCHOTTKY 40V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AB, SMC

재고36,000

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

SR203-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 2A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 125°C

패키지: DO-204AL, DO-41, Axial

재고52,770

30V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-50°C ~ 125°C

STPSC10H065BY-TR

STMicroelectronics

DIODE SIL CARBIDE 650V 10A DPAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

재고21,375

650 V

10A

-

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 650 V

480pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-40°C ~ 175°C

SA3L

Rectron USA

DIODE GEN PURP 200V 1A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 200 V

8pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

1N4148WS-AQ

Diotec Semiconductor

SMALL SIGNAL DIODE SOD-323F 100V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고8,985

75 V

150mA

1.25 V @ 150 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

1 µA @ 75 V

2pF @ 0V, 1MHz

Surface Mount

SC-90, SOD-323F

SOD-323

-55°C ~ 150°C

EP05Q06

KYOCERA AVX

DIODE SCHOTTKY 60V 500MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C

패키지: -

Request a Quote

60 V

500mA

620 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

-

Surface Mount

SOD-123

-40°C ~ 150°C

UF3D_R1_00001

Panjit International Inc.

DIODE GEN PURP 200V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고4,512

200 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 200 V

75pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

UGF12JDH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고3,000

600 V

12A

3.1 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

500 nA @ 600 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 175°C

UES701R

Microchip Technology

DIODE GEN PURP 50V 25A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 20 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

50 V

25A

950 mV @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

20 µA @ 50 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-55°C ~ 175°C

ER2E_R1_00001

Panjit International Inc.

DIODE GEN PURP 300V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고2,400

300 V

2A

1.25 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 300 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

SR305H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

50 V

3A

700 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

BAT54GW

Taiwan Semiconductor Corporation

0.1A, 30V, SCHOTTKY RECTIFIER

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

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30 V

100mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C