페이지 36 - 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
UP01214G0L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SSMINI5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F3	패키지: SOT-665	재고403,200	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	125mW	Surface Mount	SOT-665	SSMini5-F3
XP0621600L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	패키지: 6-TSSOP, SC-88, SOT-363	재고2,944	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
NSBC124XPDXV6T1G	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고5,984	100mA	50V	22k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
XP0621400L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	패키지: 6-TSSOP, SC-88, SOT-363	재고30,000	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
XP0411600L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	패키지: 6-TSSOP, SC-88, SOT-363	재고5,840	100mA	50V	4.7k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
BCR116SH6327XTSA1	Infineon Technologies	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	패키지: 6-VSSOP, SC-88, SOT-363	재고5,792	100mA	50V	4.7k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	150MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
DDC143EH-7	Diodes Incorporated	TRANS 2NPN PREBIAS 0.15W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고4,656	100mA	50V	4.7k	4.7k	20 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	SOT-563
DDC114TH-7	Diodes Incorporated	TRANS 2NPN PREBIAS 0.15W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고3,600	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 100µA, 1mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBC115EDXV6T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.5W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고5,392	100mA	50V	100k	100k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
PEMH2,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W SOT666 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	패키지: SOT-563, SOT-666	재고7,648	100mA	50V	47k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
UMF28NTR	Rohm Semiconductor	TRANS NPN PREBIAS/PNP 0.15W UMT6 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 150mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 140MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고2,512	100mA, 150mA	50V	22k	47k	68 @ 5mA, 5V / 180 @ 1mA, 6V	300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA	500nA	250MHz, 140MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
UMB8NTR	Rohm Semiconductor	TRANS PREBIAS DUAL PNP UMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	패키지: 6-TSSOP, SC-88, SOT-363	재고3,280	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	-	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
RN1968(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: 6-TSSOP, SC-88, SOT-363	재고21,894	100mA	50V	22k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN2711JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ESV Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	패키지: SOT-553	재고30,648	100mA	50V	10k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-553	ESV
UP0339000L	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k, 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F2	패키지: SOT-665	재고57,264	100mA	50V	47k, 10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	125mW	Surface Mount	SOT-665	SSMini5-F2
DMA961040R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SSMINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F4-B	패키지: SOT-665	재고5,440	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-665	SSMini5-F4-B
DMA5640M0R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SMini6-F3-B	패키지: 6-SMD, Flat Leads	재고6,320	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	6-SMD, Flat Leads	SMini6-F3-B
DMA264040R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP MINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	패키지: SOT-23-6	재고3,728	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
PBLS4002Y,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 6TSSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 300MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고26,868	100mA, 500mA	50V, 40V	4.7k	4.7k	30 @ 10mA, 5V / 150 @ 100mA, 2V	150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA	1µA	300MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
UMD10N-TP	Micro Commercial Co	TRANS PREBIAS 1NPN 1PNP 50V Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	100mA	50V	2.2kOhms	2.2kOhms	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NHUMB13X	Nexperia USA Inc.	TRANS PREBIAS 2PNP 80V 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	재고54,000	100mA	80V	4.7kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	150MHz	350mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
UMB4N-TP	Micro Commercial Co	Interface Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	100mA	50V	10kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PIMC31PAS-QX	Nexperia USA Inc.	PIMC31PAS-Q/SOT1118/HUSON6 Transistor Type: 1 NPN - Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 210MHz, 150MHz Power - Max: 360mW Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020D-6	패키지: -	재고9,000	500mA	50V	1kOhms	10kOhms	70 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	210MHz, 150MHz	360mW	Surface Mount	6-UDFN Exposed Pad	DFN2020D-6
EMG5DXV5T1	onsemi	TRANS DUAL BIAS NPN 50V SOT-563 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PIMD3F	Nexperia USA Inc.	TRANS PREBIAS 1NPN 1PNP 6TSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz, 180MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	패키지: -	Request a Quote	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz, 180MHz	250mW	Surface Mount	SC-74, SOT-457	6-TSOP
RN2906FE-LF-CT	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고11,928	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN4907FE-LF-CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고11,940	100mA	50V	10kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
PUMD16-QX	Nexperia USA Inc.	PUMD16-Q/SOT363/SC-88 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: -	Request a Quote	100mA	50V	22kOhms	47kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP

UP01214G0L

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SSMINI5

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F3

패키지: SOT-665

재고403,200

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

125mW

Surface Mount

SOT-665

SSMini5-F3

XP0621600L

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

패키지: 6-TSSOP, SC-88, SOT-363

재고2,944

100mA

50V

4.7k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

NSBC124XPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고5,984

100mA

50V

22k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

XP0621400L

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

패키지: 6-TSSOP, SC-88, SOT-363

재고30,000

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

XP0411600L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1

패키지: 6-TSSOP, SC-88, SOT-363

재고5,840

100mA

50V

4.7k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SMINI6-G1

BCR116SH6327XTSA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

재고5,792

100mA

50V

4.7k

47k

70 @ 5mA, 5V

300mV @ 500µA, 10mA

-

150MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

DDC143EH-7

Diodes Incorporated

TRANS 2NPN PREBIAS 0.15W SOT563

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고4,656

100mA

50V

4.7k

20 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

SOT-563

DDC114TH-7

Diodes Incorporated

TRANS 2NPN PREBIAS 0.15W SOT563

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고3,600

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 100µA, 1mA

-

250MHz

150mW

Surface Mount

SOT-563, SOT-666

SOT-563

NSBC115EDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고5,392

100mA

50V

100k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

PEMH2,115

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

패키지: SOT-563, SOT-666

재고7,648

100mA

50V

47k

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

SOT-563, SOT-666

SOT-666

UMF28NTR

Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 140MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고2,512

100mA, 150mA

50V

22k

47k

68 @ 5mA, 5V / 180 @ 1mA, 6V

300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA

500nA

250MHz, 140MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

UMB8NTR

Rohm Semiconductor

TRANS PREBIAS DUAL PNP UMT6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

패키지: 6-TSSOP, SC-88, SOT-363

재고3,280

100mA

50V

10k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

-

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

RN1968(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: 6-TSSOP, SC-88, SOT-363

재고21,894

100mA

50V

22k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN2711JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

패키지: SOT-553

재고30,648

100mA

50V

10k

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

100mW

Surface Mount

SOT-553

ESV

UP0339000L

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k, 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F2

패키지: SOT-665

재고57,264

100mA

50V

47k, 10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz, 80MHz

125mW

Surface Mount

SOT-665

SSMini5-F2

DMA961040R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SSMINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F4-B

패키지: SOT-665

재고5,440

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-665

SSMini5-F4-B

DMA5640M0R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B

패키지: 6-SMD, Flat Leads

재고6,320

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

6-SMD, Flat Leads

SMini6-F3-B

DMA264040R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP MINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

패키지: SOT-23-6

재고3,728

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

300mW

Surface Mount

SOT-23-6

Mini6-G4-B

PBLS4002Y,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 6TSSOP

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 300MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고26,868

100mA, 500mA

50V, 40V

4.7k

30 @ 10mA, 5V / 150 @ 100mA, 2V

150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

1µA

300MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

UMD10N-TP

Micro Commercial Co

TRANS PREBIAS 1NPN 1PNP 50V

Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

Request a Quote

100mA

50V

2.2kOhms

80 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

250mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NHUMB13X

Nexperia USA Inc.

TRANS PREBIAS 2PNP 80V 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 150MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

재고54,000

100mA

80V

4.7kOhms

47kOhms

100 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

150MHz

350mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

UMB4N-TP

Micro Commercial Co

Interface

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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100mA

50V

10kOhms

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PIMC31PAS-QX

Nexperia USA Inc.

PIMC31PAS-Q/SOT1118/HUSON6

Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 210MHz, 150MHz
Power - Max: 360mW
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020D-6

패키지: -

재고9,000

500mA

50V

1kOhms

10kOhms

70 @ 50mA, 5V

100mV @ 2.5mA, 50mA

500nA

210MHz, 150MHz

360mW

Surface Mount

6-UDFN Exposed Pad

DFN2020D-6

EMG5DXV5T1

onsemi

TRANS DUAL BIAS NPN 50V SOT-563

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

PIMD3F

Nexperia USA Inc.

TRANS PREBIAS 1NPN 1PNP 6TSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

패키지: -

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100mA

50V

10kOhms

30 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

230MHz, 180MHz

250mW

Surface Mount

SC-74, SOT-457

6-TSOP

RN2906FE-LF-CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고11,928

100mA

50V

4.7kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

RN4907FE-LF-CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고11,940

100mA

50V

10kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

PUMD16-QX

Nexperia USA Inc.

PUMD16-Q/SOT363/SC-88

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: -

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100mA

50V

22kOhms

47kOhms

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP